臺灣博碩士論文加值系統

本研究先用RF射頻磁控濺鍍(RF magnetron sputtering)將純度99.99 %的氧化錫(SnO2)在不同濺鍍功率中找出合適的濺鍍參數，沉積於玻璃基板上形成氧化層，再以DC直流濺鍍(DC magnetron sputtering)純度99.99 %的金屬鈦(Ti)靶鍍至氧化夾層中，形成多層薄膜。並將薄膜在真空下進行不同溫度之退火，藉由熱能使多層薄膜內部有足夠能量再結晶重新排列，使薄膜在結構上可以達到置換的特性或者改善內部的缺陷，研究Ti/SnO2雙層薄膜、TTT、TTG和TTI多層薄膜經過退火處理後，對薄膜的光學、電學、表面結構和結構性質的影響，以及薄膜電阻和品質因素作分析。研究結果發現，Ti/SnO2雙層薄膜在退火200℃，時間30分鐘有最低的電阻率8.95x10-3 Ω-cm，當退火溫度越高，平均穿透率越大，最好為78.18 %；TTT多層薄膜在未退火時有最低的電阻率1.27x10-2 Ω-cm；TTG多層薄膜在未退火時有最低的電阻率1.24x10-2 Ω-cm；TTI多層薄膜在退火300℃時有最低的電阻率1.23x10-3 Ω-cm。三種多層薄膜的光學性質皆是退火溫度越高，平均穿透率越好，品質因素的部分以TTI多層薄膜的1.02x10-2 Ω-1最好。

In this study, RF magnetron sputtering of SnO2 on the glass substrate to form oxide layer with different power was performed first. Then DC sputtering was used to deposit Ti as the intermediate oxide layer to form multilayer film. The multilayer film was then annealed in the vacuum under different temperature. By means of the thermal energy, there is enough energy for multilayer film to recrystallization and re-permute such that the structure of the film can achieve alternative characteristic and improve the interior defect. This study investigated the impact of annealing on the multilayer film’s optics, electricity, surface structure, the characteristic of the structure, sheet resistance and the FOM. The results show that when double layer film of Ti/SnO2 annealed at two hundred degree Celsius for thirty minutes, we could have the smallest value of resistant at 8.95x10-3 Ω-cm, and the higher the annealing temperature, the higher the average transmittance. The best value of transmittance is 78.18 %. The TTT multilayer film can achieve the smallest value of resistant of 1.27x10-2 Ω-cm and the TTG multilayer film can achieve the lowest value of resistant of 1.24x10-2 Ω-cm when they are not annealed. The TTI multilayer can achieve the smallest value of resistant of 1.23x10-3 Ω-cm when it is annealed at three hundred degree Celsius. For all the three multilayer films, the higher the annealing temperature, the better average transmittance they can achieve. TTI has the best FOM among all the multilayer films and the FOM is 1.02x10-2 Ω-1.

摘要 i
Abstract ii
致謝 iv
目錄 v
圖目錄 viii
表目錄 xiii
第一章 緒論 1
第二章 實驗原理與文獻回顧 5
2-1 透明導電薄膜 5
2-1-1 金屬氧化物薄膜 6
2-1-2 金屬薄膜 6
2-1-3 氧化物/金屬/氧化物薄膜 7
2-1-4 氧化錫薄膜特性 8
2-1-5 氧化銦薄膜特性 9
2-1-6 氧化鋅薄膜特性 9
2-1-7 氧化鋅鎵薄膜特性 10
2-1-8 鈦薄膜性質 10
2-2 二氧化錫(SnO2)結構及特性 11
2-3 透明導電膜光學性質 12
2-4 透明導電薄膜之製備 13
2-4-1 濺鍍原理 15
2-4-2 直流濺鍍 17
2-4-3 射頻濺鍍 18
2-4-4 磁控濺鍍 19
2-4-5 脈衝濺鍍 20
2-5 薄膜沉積原理 21
2-6 退火處理(Annealing Process) 22
2-7 薄膜電性量測 23
2-7-1 霍爾效應量測原理 23
2-7-2 薄膜電阻 25
2-8 X-ray繞射原理 26
2-9 原子力顯微鏡(AFM)原理 27
2-10 薄膜品質因素 29
第三章 實驗方法與步驟 30
3-1 實驗材料 30
3-1-1 靶材規格 30
3-1-2 工作氣體 30
3-2 實驗規劃 31
3-3 實驗流程 31
3-4 實驗設備 33
3-4-1 濺鍍系統 33
3-4-2 退火系統 33
3-4-3 薄膜厚度量測系統 34
3-4-4 薄膜電性量測系統 35
3-4-5 薄膜光學量測系統 36
3-4-6 表面形貌分析系統 37
3-4-7 薄膜結構分析系統 39
3-5 實驗步驟 40
3-5-1 基材清洗 40
3-5-2 濺鍍製程 41
3-5-3 退火製程 41
第四章 結果與討論 42
4-1 單層薄膜濺鍍參數選擇 42
4-2 雙層薄膜之特性 45
4-2-1 Ti/SnO2雙層薄膜退火後厚度比較 46
4-2-2 Ti/SnO2雙層薄膜退火後XRD性質比較 46
4-2-3 Ti/SnO2雙層薄膜退火後電性性質比較 48
4-2-4 Ti/SnO2雙層薄膜退火後光學性質比較 51
4-2-5 Ti/SnO2雙層薄膜退火後表面形貌分析 55
4-2-6 Ti/SnO2雙層薄膜品質因素分析 65
4-3 不同多層薄膜之特性 68
4-3-1 多層薄膜退火對厚度之影響 68
4-3-2 多層薄膜退火後對XRD性質之比較 71
4-3-3 多層薄膜退火後對電性性質之比較 74
4-3-4 多層薄膜退火後對光學性質之比較 80
4-3-5 多層薄膜退火後對表面形貌之分析 88
4-3-6 多層薄膜退火後對晶粒大小之分析 129
4-3-7 多層薄膜退火後品質因素分析 133
第五章 結論與未來展望 138
參考文獻 139

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