本論文提出兩組溫度曲率補償技術:可調式溫度曲率補償技術和V型曲線校正技術，並分別實現於sub-1V能隙參考電路。可調式溫度曲率補償電路在低溫度區和高溫度區產生與參考電壓溫度曲率反方向的補償電壓，在中間溫度區不產生任何補償電壓，保留能隙參考電路近零溫度係數的特性，另外，補償的溫度範圍和數值可依不同溫度曲率產生最佳補償。所提出的具可調式溫度曲率補償之能隙參考電路在-40 °C至140 °C溫度範圍操作，相較於補償前的參考電壓，其溫度係數獲得了86.5 – 90.9 %的改善，量測結果顯示所提出的能隙參考電路對於電源電壓變化有良好的抑制能力，具有0.08%/V的線性調節能力，所使用的28μA電流和0.0094 mm2晶片面積在電路應用上非常具有競爭力。
V型曲線校正電路僅使用七顆MOS電晶體便實現全區溫度範圍的溫度曲率補償，無論是上彎型曲率電壓或下彎型曲率電壓，V型曲線校正電路藉著使用電流汲取和電流流入技術來產生相對應的V型曲線補償電壓和倒V型曲線補償電壓。具V型曲線校正之能隙參考電路在1.8V電源電壓和-40 °C – 140 °C溫度範圍操作，實作的八顆參考電壓獲得1.9 – 5.28 ppm/°C溫度係數，在1.2 – 1.8V電源電壓變化的操作，參考電壓僅微幅變動0.2 mV，獲得0.033 %/V的線性調節率，另外，能隙參考電路的26.3μA電流消耗、0.0139 mm2晶片面積和-130.24 dBm雜訊密度在電路應用上是非常有實用性。本論文所實現的兩個能隙參考電路都是使用台積電0.18-μm 1P6M CMOS 1.8V製程技術設計與製造。

This dissertation proposes two sets of temperature curvature compensation technologies: adjusted-temperature curvature compensation technology and v-curve correction technology, and they are implemented in sub-1V bandgap reference circuit, respectively. The proposed adjusted-temperature curvature compensation circuit generates a compensation voltage that is opposite to the temperature curvature of the reference voltage in the low temperature region and the high temperature region. In the intermediate temperature region, the proposed circuit does not generate any compensation voltage, but retains the near-zero temperature coefficient of the bandgap reference circuit. In addition, the optimal temperature range of the compensation voltage can be determined according to different curvature voltages. Compared to the uncompensated reference voltage, the temperature coefficient of the proposed bandgap reference voltage with adjusted-temperature curvature compensation is improved by 86.5 – 90.9 % in the temperature range of -40 °C to 140 °C. The measurement results show that the proposed bandgap reference circuit has a good ability to suppress the variations of the power supply voltage, and has a line regulation of 0.08%/V. The 28μA current consumption and 0.0094 mm2 chip area are very competitive in the realization of circuit applications.
The proposed v-curve correction circuit uses only seven MOS transistors to achieve curvature compensation for the entire temperature range. Whether it is a convex curvature reference voltage or a concave curvature reference voltage, the v-curve correction circuit uses the technology of current sink or current source to generate the corresponding v-curve compensation voltage or inverted v-curve compensation voltage. The proposed bandgap reference with a v-curve correction circuit obtains a temperature coefficient of 1.9 – 5.28 ppm/°C from -40 °C to 140 °C at a 1.8V supply voltage in eight samples. The experimental result indicates a constant voltage of 494.5 mV with a 0.2 mV variation under a 0.6 V supply voltage variation. The proposed bandgap reference circuits in this paper were designed and manufactured using TSMC 0.18-μm 1P6M CMOS 1.8V process.

摘要...i
Abstract...ii
誌謝...iii
目錄...iv
表目錄...v
圖目錄...vi
第一章 緒論...1
1.1 文獻探討與研究動機...1
1.2 論文架構...4
第二章 能隙參考電路的設計考量...5
2.1 負溫度係數電壓...5
2.2 正溫度係數電壓...7
2.3 零溫度係數電壓...12
2.3.1 傳統能隙參考電路...13
2.3.2 低於1V能隙參考電路[18-42]...18
第三章 具可調式溫度曲率補償之能隙參考電路...23
3.1 補償上彎型溫度曲率電壓之可調式溫度曲率補償電路...24
3.2 補償下彎型溫度曲率電壓之可調式溫度曲率補償電路...28
3.3 具可調式溫度曲率補償之能隙參考電路實驗結果...33
第四章 具V型曲線校正之高精準度能隙參考電路...40
4.1 Sub-1V能隙參考電路設計...41
4.2 V型曲線校正電路...43
4.3 晶片實作與實驗結果...49
第五章 結論...52
參考文獻...53
Extended Abstract...57

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