臺灣博碩士論文加值系統

本研究先使用細緻平衡(Detail balance)理論計算出最佳轉換效率時的能隙位置，接著再使用數值模擬軟體SCAPS，模擬由高能隙鈣鈦礦(Perovskite)和較低能隙銦鎵氮(InxGa1-xN)組成的四端子雙接面太陽能電池其不同的能隙、厚度和摻雜濃度對轉換效率的影響。上層鈣鈦礦使用不同的能隙材料而下層銦鎵氮透過公式計算所需能隙及參數。結果表示，上層鈣鈦礦太陽能電池的轉換效率在Eg1=1.41 eV時有最佳值為28.17%，而下層銦鎵氮太陽能電池的轉換效率則隨著上層鈣鈦礦的能隙增加而逐漸增加，可達到12.54%。之後也模擬了鈣鈦礦太陽能電池在不同的電子親和力、吸收係數和缺陷密度下對轉換效率造成的影響及分析量子效率。而最後結果表示，整體的轉換效率最大值則是發生在Eg1=1.41 eV對應到Eg2=0.92 eV時，分別為28.17%和6.73%，總和為34.9%。期望透過此結果為實驗研究者們提供以鈣鈦礦/銦鎵氮為材料的機械式堆疊結構的方向和參考。

In this study, the Detail balance theory is used to calculate the energy gap position at the optimal conversion efficiency, and then used the numerical simulation software SCAPS, Simulate the effects of different energy gaps, thicknesses, and doping density on the conversion efficiency of a four terminal double-junction solar cell composed of high energy gap perovskite and lower energy gap InxGa1-xN. The upper layer of perovskite uses different energy gap materials, while the lower layer of InxGa1-xN uses the formula to calculate the required energy gap and parameters. The results show that the conversion efficiency of the upper layer perovskite solar cell has an optimal value of 28.17% at Eg1=1.41 eV, while the conversion efficiency of the lower layer InGaN solar cell increases gradually with the increase of the energy gap of the upper layer perovskite , reaching 12.54%. Afterwards, we also simulated the effect of perovskite solar cells on conversion efficiency under different electron affinity, absorption coefficient, and defect density, and analyzed their quantum efficiency. The final results show that the maximum overall conversion efficiency occurs when Eg1=1.41 eV corresponds to Eg2=0.92 eV, which are 28.17% and 6.73% respectively, and the total is 34.9%. It is hoped that this result will provide experimental researchers with the direction and reference of the mechanically-stacked structure using perovskite/InGaN as the material.

中文摘要 i
Abstract ii
致謝 iii
目 錄 iv
表 目 錄 vi
圖 目 錄 vii
第一章 緒論 1
1.1 前言 1
1.2 文獻回顧 4
1.3 研究動機與目的 9
第二章 研究方法 10
2.1 太陽能電池理論 10
2.2 太陽能電池轉換效率計算 12
2.3 黑體輻射與詳細平衡極限 13
2.4 串聯型(Tandem)結構 14
2.5 SCAPS模擬軟體介紹 16
2.6 模擬結構及參數設定 18
第三章 結果與討論 23
3.1 上層鈣鈦礦電子傳輸層和電洞傳輸層濃度厚度之優化 23
3.1.1 電子傳輸層 23
3.1.2 電洞傳輸層 26
3.2 上層不同能隙鈣鈦礦吸收層材料之優化 28
3.2.1 能隙為1.70 eV之三碘合鉛酸銫CsPbI3 28
3.2.2 能隙為1.30 eV之甲基銨碘化錫MASnI3 31
3.2.3 能隙為1.41 eV之甲脒碘化錫FASnI3 34
3.2.4 能隙為1.50 eV之甲基銨碘化鉛MAPbI3 36
3.2.5 能隙為1.59 eV之銫甲脒鉛混和鹵化物FA0.85Cs0.15Pb(I0.85Br0.15)3 39
3.2.6 能隙為1.85 eV之銫甲脒鉛混和鹵化物FA0.83Cs0.17PbI1.5Br1.5 41
3.3 下層銦鎵氮(InxGa1-xN)之優化 44
3.3.1 上層鈣鈦礦能隙為1.70 eV 44
3.3.2 上層鈣鈦礦能隙為1.30 eV 47
3.3.3 上層鈣鈦礦能隙為1.41 eV 48
3.3.4 上層鈣鈦礦能隙為1.50 eV 51
3.3.5 上層鈣鈦礦能隙為1.59 eV 52
3.3.6 上層鈣鈦礦能隙為1.85 eV 54
3.4 上層加下層整合 56
3.5 鈣鈦礦之能隙與電子親和力分析 58
3.5.1 鈣鈦礦吸收層 58
3.5.2 電子傳輸層 62
3.5.3 電洞傳輸層 63
3.6 吸收係數和量子效率 64
3.7 缺陷密度 67
第四章 結論 69
參考文獻 70

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