臺灣博碩士論文加值系統

在鋁合金表面製備氮化鋁薄膜大多以低壓電漿製程而達成，但是所需的設備成本高昂且耗時。因此本研究嘗試以相對低設備成本的常壓電漿製程，可在短時間下轟擊鋁合金表面製備出氮化鋁薄膜。本研究探討電漿氣體種類、氣體流量、轟擊距離、轟擊時間及針管型號，對生成氮化鋁薄膜之影響。
立方氮化鋁薄膜可在以22G針管在轟擊距離1 mm，時間為20 min的條件下生成。另以FE-SEM觀察薄膜的最小尺寸為1~10 nm，而且團聚成1~5 μm顆粒。最後以拉曼光譜確認此薄膜為立方氮化鋁相(c-AlN)。以光學放射光譜結果觀察使用N2/H2=9常壓電漿可產生較高強度NH自由基，有助於AlN形成。
本研究結果顯示以常壓N2/H2=9微電漿在流量800 sccm、轟擊距離1 mm、搭配22G針管，可在短時間(3~20 min)在鋁合金表面獲得c-AlN氮化鋁薄膜。

A low-pressure plasma process is used to prepare aluminum nitride thin films on aluminum alloys, which requires high cost and time-consuming. Therefore, atmospheric pressure microplasma process to produce aluminum nitride thin film, which possesses low cost and short time consuming (3~20 min), by bombarding aluminum alloys. The factors of the growth of aluminum nitride thin film is also discussed, including plasma gas (N2 & N2/H2=9), the gas flow rate (200-800 sccm), bombardment distance (1,4 mm), the time (3,20 min), and needle type (8G, 22G).
Cubic AlN thin film can be obtained with 22G at a bombardment distance of 1 mm for 20 min. The particle size of AlN was 1-10 nm and the grain size of 1-5 μm. Further more, the thin film was identified as cubic aluminum nitride phase (c-AlN) by the Raman spectroscopy. More NH+ radicals was found at N2/H2=9 by OES, which enhance the growth of AlN thin films.
Using atmospheric pressure plasma process to prepare cubic-AlN thin films has the advantages of short preparing time.

中文摘要 I
Abstract II
誌謝 III
總目錄 IV
表目錄 VII
圖目錄 IX
第一章 緒論 1
1.1 前言 1
第二章 文獻回顧 4
2.1 電漿態 4
2.2 電漿溫度分類 8
2.3 大氣電漿(Atmospheric Plasma) 11
2.4 介電質放電電漿(Dielectric Barrier Discharge, DBD) 11
2.5 電暈放電電漿(Corona Discharge) 12
2.6 電漿噴射束(Plasma Jet) 13
2.7 電漿火炬(Plasma Torch) 16
2.8 氮化鋁結構 17
2.9 氮化鋁特性及運用 18
2.10 氮化鋁薄膜製備方法 20
2.10.1 反應磁控濺鍍法(Reactive Magnetron Sputtering) 21
2.10.2 高功率脈衝磁控濺鍍法(High Power Impulse Magnetron Sputtering, HIPIMS) 22
2.10.3 PIII浸沒離子佈植技術(Plasma Immersion Ion Implantation, PIII) 22
2.10.4 直流輝光放電電漿法(DC glow discharge) 23
2.10.5 大氣電漿噴塗法(Atmospheric Plasma Spray) 24
2.10.6 直流電弧電漿法(DC Arc Plasma) 24
2.10.7 交流電弧電漿法(AC Arc Plasma) 24
第三章 研究方法 27
3.1 實驗流程 27
3.2 微波電漿火炬製備氮化鋁薄膜 29
3.3 微電漿製備氮化鋁薄膜 31
3.4 光學發射光譜儀(Optical Emission Spectroscopy, OES) 35
3.5 X光繞射儀(X-ray Diffractometer, XRD) 36
3.6 拉曼光譜儀(Raman Spectroscopy, Raman) 38
3.7 場發射掃描式電子顯微鏡(Field emission scanning electron microscope, FE-SEM) 39
3.8 能量散射X射線光譜儀（Energy Dispersive X-ray Spectroscopy, EDS） 40
第四章 結果與討論 41
4.1 微波電漿火炬在不同轟擊時間的結果 41
4.2 微電漿在鋁基材表面製備氮化鋁薄膜 44
4.3 微電漿氣體流量變化對於生成AlN的影響 47
4.4 微電漿轟擊距離及轟擊時間對於生成AlN的影響 50
4.5 微電漿針管尺寸及轟擊時間對於生成AlN的影響 53
4.6 Raman光譜儀確認氮化鋁相型態 56
4.7 氮化鋁的形成與微結構的探討 60
第五章 結論 66
參考文獻 68

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