本研究使用射頻磁控濺鍍系統將不同薄膜厚度與不同濃度鎂摻雜氧化鋅薄膜濺鍍至64°Y-X鈮酸鋰基板，並藉由黃光微影製程將線寬10μm之指叉狀鋁金屬電極，而本文分別將電極製作於薄膜上方和下方，最後將純氧化鋅奈米柱與鎂摻雜氧化鋅奈米柱成長於感測區上，使用波長254nm、365nm之紫外光照射元件，觀察其變化，並使用場發射掃描式電子顯微鏡、EDS與X光繞射儀分析晶種結構與結晶特性。
本研究首先比較不同厚度之純氧化鋅薄膜，得出擁有最佳靈敏度之薄膜厚度，再分別摻雜1、2、3、5M的鎂以完成不同濃度之鎂摻雜氧化鋅薄膜，得出最佳靈敏度之鎂摻雜氧化鋅薄膜，並生長鎂摻雜氧化鋅奈米柱，濃度為1、2、3、5M，探討兩種表面聲波元件結構之差異，與鎂摻入氧化鋅薄膜與氧化鋅奈米柱，對頻率響應、相位、損耗、靈敏度的影響，並得出擁有最高靈敏度之表面聲波紫外光感測器，並探討IV特性曲線。

Pure and magnesium-doped ZnO thin films were grown on 64 Y-X LiNbO3 through radio-frequency magnetron sputtering, and pure and Mg-doped ZnO nanorods were synthesized on ZnO thin films by using the hydrothermal method. The crystalline structure, surface morphology and composition of ZnO films and nanorods were examined using X-ray diffraction, scanning electron microscope and energy-dispersive X-ray spectroscopy. We designed 10 µm-wide aluminum interdigital transducer for surface acoustic wave and metal-semiconductor-metal photodetector and grew ZnO nanorods on sensing area to enhance the ultraviolet sensitivity. Effects of ZnO thin film thickness and magnesium-doped amounts on ultraviolet sensitivity were investigated. The performance of the photodetector was evaluated using the variations in insertion loss, phase shift and output current. The maximum ultraviolet sensitivity of surface acoustic wave photodetector was obtained at 1µm-thick ZnO thin film with 1M Mg added and 1M Mg-doped ZnO nanorods.

摘要.....................i
Abstract..............ii
誌謝.....................iii
目錄.....................iv
表目錄.....................vii
圖目錄.....................ix
第一章 緒論.................................................1
1.1 前言.................................................1
第二章 基礎理論.................................................3
2.1 壓電效應.................................................3
2.2 具壓電特性之材料..........................................4
2.2.1 壓電材料.................................................4
2.3 表面聲波概述.................................................5
2.3.1 雷利波(Rayleigh Waves)...................................5
2.3.2 水平剪切聲波(Shear Horizontal Acoustic Waves)..............6
2.3.3 表面掠塊體波(Surface Skimming Bulk Waves)..............6
2.3.4 拉福波(Love Surface Acoustic waves).....................6
2.3.5 拉福波存在條件..........................................7
2.4 表面聲波元件構造及製程參數............................10
2.4.1 表面聲波元件(Surface acoustic wave).....................10
2.4.2 指叉狀電極與設計參數...................................10
2.5 表面聲波元件量測參數...................................12
2.5.1 中心頻率與波速..........................................12
2.5.2 機電耦合係數(Electromechanical Coupling Coefficient).......12
2.5.3 插入損耗(Insertion loss)............................13
2.5.4 溫度頻率係數(temperature frequency coefficient).......13
2.6 使用元素與材料..........................................14
2.6.1 氧化鋅.................................................14
2.6.2 氧化鎂.................................................14
2.6.3 鎂摻雜.................................................15
2.6.4 鈮酸鋰(LiNbO3)..........................................17
2.7 薄膜沉積.................................................18
2.7.1 射頻磁控濺鍍(RF Magnetron Sputtering).....................18
2.7.2 沉積薄膜之機制..........................................19
2.8 氧化鋅的本質缺陷..........................................20
2.9 熱退火.................................................21
2.10 氧化鋅奈米結構..........................................22
2.10.1 水熱法原理.................................................22
2.11 紫外光感測機制...........................................23
2.12 聲電效應.................................................24
2.13 質量負載效應與彈性負載...................................25
2.14 紫外光靈敏度...........................................25
第三章 實驗步驟與分析...........................................27
3.1 實驗架構與流程..........................................27
3.2 鎂摻雜氧化鋅粉靶材製作...................................28
3.3 表面聲波元件製作..........................................29
3.3.1 氧化鋅薄膜製程與參數...................................29
3.3.2 黃光微影製程..........................................31
3.3.3 成長氧化鋅奈米結構..........................................33
3.4 分析與量測之儀器..........................................35
3.4.1 場發射掃描式電子顯微鏡(Field Emission Scanning Electron Microscopy)................................................. 35
3.4.2 X光繞射儀(X-ray Diffraction, XRD).....................36
3.4.3 網路分析儀(Network analyzer)............................37
3.5 表面聲波元件之紫外光量測...................................38
3.6 I-V特性曲線量測..........................................38
3.7 實驗藥品、耗材、儀器..........................................39
3.7.1 實驗藥品與耗材..........................................39
3.7.2 實驗儀器.................................................40
第四章 結果與討論.................................................41
4.1 氧化鋅表面結構、形貌分析...................................41
4.1.1 SEM與EDS分析.................................................41
4.1.2 XRD分析.................................................53
4.2 表面聲波元件頻率響應分析...................................54
4.2.1 電極上結構.................................................54
4.2.1.1 不同厚度純氧化鋅薄膜退火前與退火後頻率響應分析.....................54
4.2.1.2 不同濃度鎂摻雜氧化鋅薄膜退火前與退火後之頻率響應分析..............65
4.2.1.3 不同濃度鎂摻雜氧化鋅奈米柱之頻率響應分析............................66
4.2.2 電極中結構........................................................67
4.2.2.1 不同厚度純氧化鋅薄膜退火前與退火後頻率響應分析.....................67
4.2.2.2 不同濃度鎂摻雜氧化鋅薄膜退火前與退火後之頻率響應分析..............78
4.2.2.3 不同濃度鎂摻雜氧化鋅奈米柱之頻率響應分析............................79
4.3 元件紫外光感測分析.................................................80
4.3.1 不同厚度之純氧化鋅薄膜退火前與退火後紫外光感測.....................80
4.3.2 不同濃度鎂摻雜氧化鋅薄膜退火前與退火後紫外光感測.....................96
4.3.3 不同濃度鎂摻雜氧化鋅奈米柱之紫外光感測............................112
4.3.4 不同功率密度對表面聲波紫外光感測器的影響............................120
4.4 元件IV特性曲線分析.................................................129
4.4.1 不同厚度之純氧化鋅薄膜退火前與退火後I-V特性曲線.....................129
4.4.2 不同濃度鎂摻雜氧化鋅薄膜退火前與退火後I-V特性曲線.....................132
4.4.3 不同濃度鎂摻雜氧化鋅奈米柱I-V特性曲線............................135
第五章 結論...............................................................137
參考文獻...............................................................139
Extended Abstract.................................................149

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