臺灣博碩士論文加值系統

現今螢光粉基白光發光二極體(White light-emitting diode, WLED)被廣泛應用於顯示器背光源中，而量子點(Quantum dots, QDs)因具窄半高寬的優點，可取代傳統螢光粉成為白光背光源具前景的材料。無機鈣鈦礦量子點在顯示器中最具競爭力，其具有窄半高寬及高量子效率，可提升色純度及色域面積，達到廣色域之要求。
然而未經改質之G-QD及R-QD穩定性不佳，利用2種表面改質方式-添加不同量之脂肪胺(DDA)與表面包覆SiO2。結果顯示DDA促使CsPbBr3逐漸轉為CsPbBr3及Cs4PbBr6之混合相，再轉為Cs4PbBr6純相，當完全相變化時，Cs4PbBr6不放光，量子效率最高提升至266 %且 GD1.2-QD熱穩定性最好，僅下降12 %。而包覆二氧化矽的GST75-QD熱穩定性僅下降2 %；GSA125-QD熱穩定性無任何改變，G-QD及R-QD光穩定性平均每分鐘下降0.52 %及3.33 %，GD1.2-QD為0.43 %，RSA85-QD則為0.17 %。
G-QD/KSF27-LED2、GSA85-QD/KSF20-LED1及GSA85-QD/RSA850.17-QD-LED30分別為132、134及128 %的NTSC，98、100及95之Rec. 2020。且GSA85-QD/KSF20-LED1之元件效率為66 lm/W。

Nowadays, phosphor-based white light-emitting diodes (WLEDs) are widely used in display backlights. Quantum dots (QDs) can replace traditional fluorescent phosphors due to their narrow full width at half maximum (FWHM). Therefore, QDs have become a promising material for white light backlights. Inorganic perovskite QDs are the most competitive among displays. They have a narrow FWHM and high quantum yield (QY), which can increase color purity and color gamut to meet the requirements of a wide color gamut.
However, the unmodified G-QD and R-QD have poor stability. Two surface modification methods are used-adding different amounts of fatty amine (DDA) and surface coating SiO2. The results show that DDA promotes the gradual conversion of CsPbBr3 to a mixed phase of CsPbBr3 and Cs4PbBr6, and then to a pure phase of Cs4PbBr6. When the phase changes completely, Cs4PbBr6 does not emit light, the QY is increased to 266%, and the thermal stability of GD1.2-QD is the best well, only a 12% drop. The thermal stability of GST75-QD coated with SiO2 is only reduced by 2%; the thermal stability of GSA125-QD has no change, and the photo stability of G-QD and R-QD decreases by 0.52% and 3.33% per minute on average, GD1.2-QD is 0.43%, and RSA85-QD is 0.17%.
The color gamut of G-QD/KSF27-LED2, GSA85-QD/KSF20-LED1 and GSA85-QD/RSA850.17-QD-LED30 are 132, 134 and 128 % of NTSC, and 98, 100 and 95 of Rec. 2020, respectively. And the element efficiency of GSA85-QD/KSF20-LED1 is 66 lm/W.

摘要.......................................................i
Abstract...................................................ii
誌謝.......................................................iv
目錄.......................................................v
表目錄.....................................................vii
圖目錄.....................................................viii
符號說明...................................................xi
第一章 前言................................................1
1.1 LED發展歷程............................................1
1.2 白光LED背光顯示器.......................................1
第二章 文獻回顧.............................................6
2.1 量子點.................................................6
2.1.1 量子侷限效應...........................................6
2.1.2 量子點之表面鈍化.......................................6
2.2 鈣鈦礦..................................................9
2.2.1 全無機鈣鈦礦...........................................9
2.2.2 放光機制..............................................10
2.2.3 相變化................................................10
2.3 鈣鈦礦之表面改質.........................................25
2.3.1 表面鈍化..............................................25
2.3.2 表面改質..............................................25
2.4 研究動機................................................35
第三章 實驗方法與步驟........................................36
3.1 實驗藥品................................................36
3.2 無機鈣鈦礦量子點製備、表面改質與包覆.......................38
3.2.1 製備Cs-oleate前驅物....................................38
3.2.2 CsPbBr3量子點(G-QD)之製備..............................38
3.2.3 CsPbBr1.3I1.7量子點(R-QD)之製備........................38
3.2.4 CsPbBr3表面改質........................................38
3.2.5 CsPbBr3與CsPbBr1.3I1.7穩定性...........................39
3.3 SMD白光元件製備及穩定性測試................................45
3.4 量子點與元件之特性分析.....................................47
第四章 結果與討論..............................................50
4.1 CsPbBr3和CsPbBr1.3I1.7量子點之研究.........................50
4.1.1 P-QD之光學性質...........................................50
4.1.2 CsPbBr3及CsPbBr1.3I1.7量子點之表面形貌及結構分析...........59
4.2 CsPbBr3及CsPbBr1.3I1.7量子點表面改質........................64
4.2.1 脂肪胺DDA之表面改質.......................................64
4.2.2 量子點包覆二氧化矽........................................81
4.3 P-QD之白光發光二極體........................................118
4.3.1 市售兩光色螢光粉之LED元件封裝..............................118
4.3.2 P-QD之LED元件封裝........................................123
4.3.3 P-QD之LED元件封裝穩定性...................................130
第五章 結論.....................................................133
參考文獻........................................................134
Extended Abstract..............................................142

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