本論文提出的參考電壓電路架構分為兩種，第一種為簡易型電流源參考電壓電路；第二種為改良式CMOS參考電壓電路。利用MOSFET模組來產生正溫度係數，負溫度係數由MOSFET或BJT本身的特性產生，且電路的電流源由輸出電壓回授來產生偏壓電流。將正、負溫度係數以適當的權重比相互抵銷後，以得到具有零溫度係數特性的參考電壓。

本論文提出的電路使用的製程為TSMC 0.35微米製程和TSMC 0.18微米製程，並利用HSPCIE與ADE(Analog Design Environment)模擬軟體進行佈局前、後模擬，並下線晶片進行實作，佈局前和佈局後的模擬結果均與設計理論符合，證明了該電路的可行性。另外，上述兩種電路架構皆不需使用運算放大器且MOSFET工作於弱反轉區，因此電路架構簡單且晶片面積和消耗功率也減少許多。本論文提出的參考電壓電路可應用於各種類比積體電路設計當中，以電路模組方式使用。

The reference voltage circuits proposed in this thesis are divided into two structures. The first circuit uses a simple current source as the bias current of the reference voltage. The second circuit is an improved CMOS reference voltage. By using MOSFET modules to generate positive temperature-coefficients while the negative temperature-coefficients is given from MOSFET or BJT. The bias voltage of the current source is feedback from the output voltage. The positive and negative temperature- coefficients are appropriately weighted to cancel each other out. which results in a reference voltage with zero temperature- coefficient characteristics.

In this thesis, all the proposed circuits have been implemented by using the TSMC 0.35μm process parameters and TSMC 0.18μm process parameters. The HSPICE and ADE(Analog Design Environment) simulation programs have been used to perform the pre and post layout simulations and the chips are also taped-out. Pre-layout and post-layout simulation results are consistent with the design theory which proves the feasibility of the proposed circuits. Furthermore, all the proposed circuits do no use operational amplifiers and the MOSFETs are biased to operate in the weak-inversion region, therefore the circuits are simple and the chip area is less than the traditional ones. Besides, the power consumption are reduced. The proposed circuits can be used in various analog circuits design as the circuit modules.

摘要...i
Abstract...ii
誌謝...iii
目錄...iv
表目錄...vi
圖目錄...vii
符號說明...x
第一章 緒論...1
1.1積體電路發展介紹與研究動機...1
1.2設計流程...1
1.3研究方向與重點...3
1.4論文架構簡介...3
第二章 傳統參考電壓電路...4
2.1參考電壓簡介...4
2.2參考電壓工作原理...4
2.3 BJT參考電壓電路架構...5
2.3.1負溫度係數特性...5
2.3.2正溫度係數特性...6
2.3.3 BJT參考電壓電路...7
2.4 齊納二極體參考電壓電路...9
2.5 MOSFET參考電壓電路架構...10
2.5.1 弱反轉區與溫度特性...10
2.5.2 MOSFET參考電壓電路...11
2.6 簡易型電流源...13
第三章 簡易型電流源與CMOS參考電壓設計...14
3.1 簡易型電流源參考電壓電路...14
3.1.1 TSMC 0.35μm製程佈局前模擬...15
3.2 改良式簡易型電流源參考電壓電路...17
3.2.1電路工作原理...18
3.2.2 改良式簡易型電流源參考電壓電路模擬結果...20
3.2.3 改良式簡易型電流源參考電壓電路結果整理...24
3.3 第一種低功率消耗CMOS參考電壓電路...26
3.3.1電路工作原理...27
3.3.2 第一種低功率消耗CMOS參考電壓電路模擬結果...28
3.3.3 第一種低功率消耗CMOS參考電壓電路結果整理...32
3.4 第二種低功率消耗CMOS參考電壓電路...33
3.4.1電路工作原理...33
3.4.2 第二種低功率消耗CMOS參考電壓電路模擬結果...34
3.4.3 第二種低功率消耗CMOS參考電壓電路結果整理...38
3.5 改良式CMOS參考電壓電路...39
3.5.1 電路工作原理...40
3.5.2 改良式CMOS參考電壓電路模擬結果...41
3.5.3 改良式CMOS參考電壓電路結果整理...45
第四章 晶片量測結果...47
4.1 全客製化IC設計流程...47
4.2 量測儀器與流程...48
4.3 改良式簡易型電流源參考電壓電路量測結果...49
4.3.1 晶片實體圖...49
4.3.2 晶片量測結果...50
4.3.3 量測結果檢討...52
4.4 第一種低功率消耗CMOS參考電壓電路量測結果...52
4.4.1 晶片實體圖...52
4.4.2 晶片量測...53
4.4.3 量測結果檢討...55
4.5 第二種低功率消耗CMOS參考電壓電路測量結果...56
4.5.1 晶片實體圖...56
4.5.2 晶片量測...57
4.5.3 量測結果檢討...59
4.6 改良式CMOS參考電壓電路測量結果...59
4.6.1 晶片實體圖...59
4.6.2 晶片量測...60
4.6.3 量測結果檢討...63
第五章 結論...64
參考文獻...65

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