|
[1]T. Endoh, H. Koike, and S. Ikeda et. al., "An overview of nonvolatile emerging memories—Spintronics for working memories", IEEE Journal on Emerging and Selected Topics in Circuits and Systems, vol. 6, pp. 109-119, Apr. 2016. [2]C. C. Chiu, C. W. Huang, and Y. H. Hsieh, et. al., "In-situ TEM observation of Multilevel Storage Behavior in low power FeRAM device. " Nano Energy, vol. 34, pp. 103-110, Feb. 2017. [3]W. Kang, L. Zhang, and J. O. Klein, et. al., "Reconfigurable codesign of STT-MRAM under process variations in deeply scaled technology." IEEE Transactions on Electron Devices, vol. 62, pp. 1769-1777, Mar. 2015. [4]S. Shreya, and S. Sourav, "Design, analysis and comparison between CNTFET based ternary SRAM cell and PCRAM cell." 2015 Communication, Control and Intelligent Systems (CCIS), pp. 347-351, Nov. 2015. [5]R. Waser, R. Dittmann, and G. Staikov, et. al., "Redox‐based resistive switching memories–nanoionic mechanisms, prospects, and challenges." Advanced Materials, vol. 21, pp. 2632-2663, Jul. 2009. [6]S. Bagdzevicius, K. Maas, and M. Boudard, et. al., "Interface-type resistive switching in perovskite materials." Journal of Electroceramics, vol. 39, pp. 157-184, May. 2017. [7]W. K. Hsieh, K. T. Lam, and S. J. Chang, "Bipolar Ni/ZnO/HfO2/Ni RRAM with multilevel characteristic by different reset bias." Materials Science in Semiconductor Processing, vol. 35, pp. 30-33, Mar. 2015. [8]S. Choi, J. Yang, and G. Wang, "Emerging memristive artificial synapses and neurons for energy‐efficient neuromorphic computing." Advanced Materials, vol. 32, p. 2004659, Oct. 2020. [9]M. Le Gallo, and A. Sebastian, "An overview of phase-change memory device physics." Journal of Physics D: Applied Physics, vol. 53, p. 213002, Mar. 2020. [10]P. Guo, A. M. Sarangan, and I. Agha, "A review of germanium-antimony-telluride phase change materials for non-volatile memories and optical modulators." Applied Sciences, vol. 9, p. 530, Jan. 2019. [11]R. Waser, S. Menzel, and V. Rana, "Recent progress in redox-based resistive switching." 2012 IEEE International Symposium on Circuits and Systems (ISCAS), pp. 1596-1599, May. 2012. [12]R. Midya, Z. Wang, and M. Rao, et. al., "RRAM/memristor for computing." Advances in Non-Volatile Memory and Storage Technology. Woodhead Publishing, pp. 539-583, Jul. 2019. [13]A. Gismatulin, V. Volodin, and V. Gritsenko, et. al., "All nonmetal resistive random access memory." Scientific Reports, vol. 9, pp. 1-5, Apr. 2019. [14]D. J. J Loy, P. A. Dananjaya, and X. L. Hong, et. al., "Conduction mechanisms on high retention annealed MgO-based resistive switching memory devices." Scientific Reports, vol. 8, pp. 1-9, Oct. 2018. [15]D. Kuzum, S. Yu, and H. P. Wong, "Synaptic electronics: materials, devices and applications." Nanotechnology, vol. 24, p. 382001, Sep. 2013. [16]M. A. Zidan, and W. D. Lu, "RRAM fabric for neuromorphic and reconfigurable compute-in-memory systems." 2018 IEEE Custom Integrated Circuits Conference (CICC), pp. 1-8, Apr. 2018. [17]R. B. Hur, and S. Kvatinsky, "Memristive memory processing unit (MPU) controller for in-memory processing." 2016 IEEE International Conference on the Science of Electrical Engineering (ICSEE), pp. 1-5, Nov. 2016. [18]H. Wu, P. Yao, and B. Gao, et. al., "Device and circuit optimization of RRAM for neuromorphic computing." 2017 IEEE International Electron Devices Meeting (IEDM), pp. 11-5, Dec. 2017. [19]S. Yu, B. Gao, and Z. Fang, et. al., "A neuromorphic visual system using RRAM synaptic devices with sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling." 2012 International Electron Devices Meeting, pp. 10-4, Dec. 2012. [20]S. Yu, "Introduction to neuro-inspired computing using resistive synaptic devices." Neuro-inspired Computing Using Resistive Synaptic Devices, pp. 1-15, Apr. 2017. [21]A. Grossi, E. Nowak, and C. Zambelli, et. al., "Fundamental variability limits of filament-based RRAM." 2016 IEEE International Electron Devices Meeting (IEDM), pp. 4-7, Dec. 2016. [22]R. Zhang, K. C. Chang, and T. C. Chang, et. al., "Characterization of oxygen accumulation in indium-tin-oxide for resistance random access memory." IEEE Electron Device Letters, vol. 35, pp. 630-632, Apr. 2014. [23]T. Chang, S. H. Jo, and W. Lu, "Short-term memory to long-term memory transition in a nanoscale memristor." ACS Nano, vol. 5, pp. 7669-7676, May. 2011. [24]K. Kim, S. Park, and S. M. Hu, et. al., "Enhanced analog synaptic behavior of SiNx/a-Si bilayer memristors through Ge implantation." NPG Asia Materials, vol. 12, pp. 1-13, Dec. 2020. [25]T. D. Dongale, P. S. Pawar, and R. S. Tikke, et. al., "Mimicking the synaptic weights and human forgetting curve using hydrothermally grown nanostructured CuO memristor device." Journal of Nanoscience and Nanotechnology, vol. 18, pp. 984-991, Feb. 2018. [26]W. Wu, H. Wu, and B. Gao, et. al., "A methodology to improve linearity of analog RRAM for neuromorphic computing." 2018 IEEE Symposium on VLSI Technology, pp. 103-104, Jun. 2018. [27]S. Kim, S. Choi, and W. Lu, "Comprehensive physical model of dynamic resistive switching in an oxide memristor." ACS Nano, vol. 8, pp. 2369-2376, Aug. 2014. [28]J. F. Kang, B. Gao, and P. Huang, et. al., "RRAM based synaptic devices for neuromorphic visual systems." 2015 IEEE International Conference on Digital Signal Processing (DSP), pp. 1219-1222, Jul. 2015. [29]K. C. Chang, T. C. Chang, and T. M. Tsai, et. al., "Physical and chemical mechanisms in oxide-based resistance random access memory." Nanoscale Research Letters, vol. 10, pp. 1-27, Mar. 2015. [30]F. C. Chiu, "A review on conduction mechanisms in dielectric films." Advances in Materials Science and Engineering, Feb. 2014. [31]E. W. Lim, and R. Ismail, "Conduction mechanism of valence change resistive switching memory: a survey." Electronics, vol. 4, pp. 586-613, Aug. 2015. [32]B. Gao, S. Yu, and N. Xu, et. al., "Oxide-based RRAM switching mechanism: A new ion-transport-recombination model." 2008 IEEE International Electron Devices Meeting, pp. 1-4, Dec. 2008. [33]"http://literature.cdn.keysight.com/litweb/pdf/5964-4091E.pdf" [34]A. S. Sokolov, Y. R. Jeon, and S. Kim, et. al., "Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure." Applied Surface Science, vol. 434, pp. 822-830, Mar. 2018. [35]Y. S. Chen, T. Y. Wu, and P. J. Tzeng, et. al., "Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation." 2009 International Symposium on VLSI Technology, Systems, and Applications., pp. 37-38, Apr. 2009. [36]C. C. Chang, P. C. Chen, and T. Chou et al., "Mitigating asymmetric nonlinear weight update effects in hardware neural network based on analog resistive synapse", IEEE Jornal on Emerging and Selected Topics in Circuits Systems, vol. 8, pp. 116-124, Mar. 2018.
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