臺灣博碩士論文加值系統

本研究的主要目的是評估吸除研磨 (Gettering grinding) 製程的導入來避免金屬離子擴散，將此製程應用於研磨至150 μm以下含記憶功能之凸塊晶圓。金屬層經研磨後其大氣中之金屬離子會穿經由矽晶圓背面向前側擴散而造成晶圓的功能失效。應用外質吸除 (Extrinsic gettering; EG) 以及內質吸除 (Intrinsic gettering; IG) 結構阻止金屬離子的擴散為有效的方式。
本研究導入Gettering 研磨，經研磨後的晶圓，利用粗糙度檢測儀及原子力顯微鏡(AFM)量測晶圓表面粗糙度，以SEM及TEM觀察晶圓的微結構，使用全反射式X光螢光光譜儀(Total Reflection X-Ray Fluorescence; TRXF)偵測金屬離子擴散情形。經封裝後的晶片產品，利用溫度循環試驗(TCT)以及高加速應力試驗(HAST)進行可靠度試驗，進而利用斷路和短路測試其產品之功能性(Open and short test)並使用超音波探傷儀(SAT)檢查是否脫層。
實驗結果顯示，本研究導入Gettering 研磨，利用得到的最佳化研磨參數，可有效降低金屬離子的擴散，提升封裝後的晶片產品的良率。

This study focuses on the new gettering grinding procedure which applies to memory wafer assembly which thickness less than 150 μm to prevent diffusion of metal ions.
Function of memory wafer will fail due to metal ions diffused through die backside and metal layer from atmosphere after wafer grinding. It is an effective way by using structure of extrinsic and intrinsic gettering to prevent diffusion of metal ions.
Memory wafer was grinded during assembly using gettering grinding procedure. The roughness of grinding wafer surface was measured by laser profile and AFM. The microstructure of wafer was observed using SEM and TEM. TRXF was used to confirm the diffusion status of metal ions. The reliability of assembly memory IC was verified by temperature cycle test (TCT) and high accelerated stress test (HAST) and its electric function was verified by open and short tests. SAT was used to confirm package if any possibility of delamination.
The results showed that gettering grinding procedure can prevent diffusion of metal ions effectively and improve the yield of package by using the best grinding parameters in die packaging process after gettering grinding.

摘要 .................................................................................................... I
Abstract ..............................................................................................II
誌 謝 ............................................................................................... IV
總目錄 .............................................................................................. V
表目錄 .......................................................................................... VIII
圖目錄 ............................................................................................. IX
第一章 緒論 ...................................................................................... 1
1-1研究背景 ......................................................................................... 1
1-2現況分析及發展趨勢 ...................................................................... 2
1-3 研究目的 ........................................................................................ 3
第二章 文獻回顧 .............................................................................. 5
2-1 覆晶產品研磨簡介 ......................................................................... 5
2-1-1 封裝製程 ........................................................................................... 5
2-1-2 晶圓研磨製程 ................................................................................... 6
2-2 銅離子擴散現象............................................................................. 8
2-3 吸除功能 ...................................................................................... 10
2-3-1 吸除層 ............................................................................................. 10
2-3-2 外質吸除層 (EG layer) ................................................................... 11
2-4 吸除研磨(DPEG) ......................................................................... 13
2-4-1 吸除研磨導入 ................................................................................. 13
2-4-2 吸除研磨導入覆晶封裝產品之挑戰............................................... 15
第三章 實驗 .................................................................................... 17
3-1 實驗步驟 ...................................................................................... 17
3-1-1實驗流程 .......................................................................................... 17
3-1-2實驗參數 .......................................................................................... 18
3-1-3 可靠度試驗 ..................................................................................... 19
3-2材料 ............................................................................................... 20
3-3實驗裝置圖 ................................................................................... 21
3-3-1 晶圓研磨裝置 ................................................................................. 21
3-3-2 晶圓研磨後上載具裝置 .................................................................. 23
3-4儀器設備 ....................................................................................... 24
3-5 實驗規範 ...................................................................................... 25
第四章 結果與討論 ........................................................................ 31
4-1 吸除 (DPEG) 參數實驗 .............................................................. 31
4-1-1 Spindle load current .......................................................................... 31
4-1-2 TTV .................................................................................................. 32
4-1-3 Roughness ........................................................................................ 33
4-1-4 Edge chipping ................................................................................... 35
4-1-5 Warpage ........................................................................................... 36
4-1-6 Die strength ...................................................................................... 37
4-1-7 Damage layer thickness .................................................................... 38
4-1-8 Cu2+ diffusion ................................................................................... 39
4-2 可靠度試驗 .................................................................................. 41
4-2-1環境壽命試驗前處理....................................................................... 41
4-2-2 溫度循環試驗以及加高速老化實驗............................................... 42
第五章 結論 .................................................................................... 43
第六章 參考文獻 ............................................................................ 44

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