本論文提出一應用於X頻帶之低雜訊號放大器，電路架構採用電流重複利用、雜訊消除技術以及叢集型電感之設計。與同類型電路比較之下，以相同的功率消耗為前提，可提升整體之增益，並且能夠抑制雜訊，降低整體電路之雜訊指數。
電路採用叢集型電感之設計，因其結構特性，具有相鄰磁場抵消之作用。相較於傳統八角型螺旋電感與八字形電感，具有較佳之抑制電磁干擾能力。電路模擬與實現採用台灣半導體研究中心提供的TSMC 0.18 µm 1P6M CMOS 製程，量測結果顯示在頻寬範圍為8-12 GHz，最高增益為8.5 dB，雜訊指數為5.8 dB，輸入反射損耗與輸出反射損耗皆有小於-10 dB，隔離度小於-20 dB，一分貝增益壓縮點和輸入三階截斷點在9 GHz時分別為-15 dBm與-4 dBm。操作電壓為1.2 V時，總功率消耗為6.6 mW，晶片面積為0.76×0.75 mm2。

In this paper, an X-Band low noise amplifier using cluster inductor is proposed. The circuit is realized by current-reused, noise cancellation and cluster inductor topologies. They proposed architecture reveals high gain and low noise figure, without increasing the power consumption.
The circuit adopts the cluster inductor which performs adjacent magnetic field cancellation. The cluster inductor compared with the tranditional octagon inductors and eight-shaped inductors improves the suppression of electromagnetic interference. The proposed circuit is realized in TSMC 0.18 µm 1P6M CMOS technology supported by Taiwan Semiconductor Research Institute(TSRI). The measure results show the peak gain of 8.5 dB and noise figure is 5.8 dB at 8-12 GHz. The input and output return loss are less than -10 dB. The isolation is less than -20 dB. The 1db compressed point (P1dB) and the third-order input intercept(IIP3) is -15 dBm and -4 dBm at 9 GHz, respectively. The total power consumption is 6.6 mW with a 1.2V supply. The layout size is 0.76×0.75 mm2.
Keywords: low noise amplifier, current reuse, noise cancellation, suppress electromagnetic interference, cluster inductor

中文摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 vi
表目錄 viii
第一章 緒論 1
1.1研究背景 1
1.2研究動機 2
第二章 低雜訊號放大器 4
2.1簡介 4
2.2常見的電路架構 4
2.2.1電阻性架構 5
2.2.2共閘極架構 5
2.2.3串並回授架構 6
2.2.4電感退化性架構 7
2.3雜訊分析 8
2.3.1雜訊指數 9
2.3.2熱雜訊(Thermal Noise) 10
2.3.3散射雜訊(Shot Noise) 11
2.3.4閃爍雜訊(Flicker Noise) 11
2.4散射參數(Scattering Parameters) 12
2.5線性度 13
2.5.1 1dB增益壓縮點(1dB Gain Compression Point, P1dB) 14
2.5.2交互調變失真 14
2.6穩定度 16
第三章 叢集型電感低雜訊號放大器設計 18
3.1介紹 18
3.2電路架構 18
3.2.1電流重複利用架構 19
3.3電感元件 20
3.4品質因數 22
3.4.1肌膚效應 22
3.4.2鄰近效應 23
3.5電磁干擾 23
3.6傳統型電感元件特性 24
3.7八字形電感元件特性 27
3.8叢集型電感元件特性 29
3.9各類型電感比較結果 32
3.10設計流程 34
3.11模擬結果 35
3.12量測結果 44
3.13討論與比較 49
第四章 結論與未來展望 50
4.1結論 50
4.2未來展望 50
參考文獻 51

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