臺灣博碩士論文加值系統

　本論文以全蒸鍍方式來製作0.5 cm x 0.5 cm發光面積可撓式上發光有機發光二極體，以高反射率金屬銀(Ag)與高功函數金屬金(Au)當做陽極。上發光型結構之驅動電壓偏高，本研究使用三氧化鉬(MoO3)做為電洞注入層，可以使驅動電壓降低且提升電洞注入效率。調整出元件最佳厚度，可顯著提高元件的發光亮度及效率。再使用金屬鋁做為半透明陰極，可以保持陰極透射率以及良好的電子傳輸能力。
使用鋁(Al)陰極，可以獲得良好的穿透率以及電子注入效率，因為上發光元件的光會透過陰極而發出，所以陰極的穿透率會影響元件出光率。由實驗結果看出陰極厚度與元件之導電率有關，厚度越厚其導電率變高，但元件的穿透率會降低，鋁(Al)厚度15nm時透射率為20.6%，厚度20nm時透射率降至8.1%。
獲得最佳元件結構為PEN/AgNW/Ag(80nm)/Au(3nm)/MoO3(2nm)/NPB(35nm)
/Alq3(55nm)/TPBi(10nm)/LiF(0.8nm)/Al(15nm)，當電壓8V時，元件電流密度為64.29 mA/cm2，亮度611.4 cd/m2，電流效率為0.95 cd/A。

In this paper, a 0.5 cm x 0.5 cm light-emitting area flexible upper light-emitting organic light-emitting diode is fabricated by full vapor deposition, and high reflectivity metal silver (Ag) and high work function metal gold (Au) are used as anodes. The driving voltage of the upper light-emitting structure is higher. In this study, molybdenum trioxide (MoO3) was used as the hole injection layer, which can reduce the driving voltage and improve the hole injection efficiency. Adjusting the optimal thickness of the device can significantly improve the luminous brightness and efficiency of the device. The use of aluminum metal as the semi-transparent cathode can maintain the cathode transmittance and good electron transport capability.
Use aluminum(Al) cathodes for better transmission and retention of electron injection efficiency. because the light of the upper light emitting element will be emitted through the cathode, so the transmission rate of the cathode will affect the light extraction rate of the device. From the experimental results, it can be seen that the thickness of the cathode is related to the conductivity and mobility of the device. The thicker the thickness, the higher the conductivity and mobility, but the transmission of the device will be reduced. The transmittance of aluminium (Al) is 20.6% when its thickness is 15 nm, The transmittance decreases to 8.1% when the thickness is 20 nm.
The best device structure is PEN/AgNW/Ag(80nm)/Au(3nm)/MoO3(2nm)/NPB(35nm)/Alq3(55nm)/TPBi(10nm)/LiF(0.8nm)/Al(15nm), when the voltage is 8V, the device current density is 64.29 mA/cm2, the brightness is 611.4 cd/m2, and the current efficiency is 0.95 cd/A.

摘要...i
Abstract...ii
目錄...iii
表目錄...v
圖目錄...vi
第一章緒論...1
1.1有機發光二極體簡介...1
1.2 研究動機...2
第二章、有機發光二極體原理及文獻探討...3
2.1有機發光二極體原理...3
2.1.1有機發光二極體發光機制...3
2.1.2電流注入理論...4
2.1.3有機發光二極體各層結構介紹...5
2.1.4上發光、下發光、穿透式OLED結構...7
2.1.5微共振腔效應...9
2.2相關文獻探討...10
第三章、實驗方法與步驟...12
3.1實驗流程...12
3.2陰陽極圖形製備...13
3.2.1雷雕基板圖形化...13
3.2.2基板清洗...15
3.3反射陽極製作...16
3.3.1金屬層蒸鍍步驟...16
3.4旋轉塗佈材料...18
3.4.1電洞注入層旋塗...18
3.5熱蒸鍍有機層...19
3.5.1有機層蒸鍍步驟...19
3.5.2熱蒸鍍有機層之材料選用...21
3.6 金屬蒸鍍陰極...23
3.7元件發光pattern定義流程...24
3.8 元件封裝...25
3.9元件特性量測...26
第四章、結果與討論...27
4.1調變陰極厚度對元件之穿透度與導電性影響...27
4.2調變電洞注入層對元件光電特性影響...29
4.3調變電洞注入層MoO3厚度對元件光電特性影響...32
4.4調變電洞傳輸層厚度對元件光電特性影響...35
4.5調變發光層厚度對元件光電特性影響...38
4.6在陽極增加金(Au)對元件光電特性影響...41
4.7增加電子傳輸層TPBi對元件光電特性影響...44
第五章結論...47
參考文獻...48
Extended Abstract...50

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