[1]B. T. V. Murthy, S. N.P., H. Ranjan, V. Power and T. M. Kumar, “Restive Feedback Cascaded Ultra Low Noise Figure and High Gain Ku-Band LNA for Space Application, ” 2020 5th International Conference on Communication and Electronics Systems (ICCES), Coimbatore, India, 2020, pp. 58-61.
[2]Y. Jiang, G. -D. Su, D. Sun, Y. Huang, Z. Lin and J. Liu, “GaAs based MMIC LNA for X-band Applications, ” 2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), Guangzhou, China, 2022, pp. 1-3.
[3]S. Kong, S. Wang, H. -D. Lee, B. -H. Park, S. Jang and S. -B. Hyun, “A Ku-band Cascode Low Noise Amplifier using InGaAs E-mode 0.15-um pHEMT Technology, ” 2022 14th Global Symposium on Millimeter-Waves & Terahertz (GSMM), Seoul, Korea, Republic of, 2022, pp. 32-34.
[4]林俊甫,“利用pHEMT電晶體設計之X-Band與Ku-Band低雜訊放大器”,國立虎尾科技大學電子工程系碩士論文,2023年。[5]翁聖峰,“X-Band低雜訊放大器實現於pHEMT電晶體之設計”,國立虎尾科技大學電子工程系碩士論文,2023年。[6]詹忠叡,“設計於Ku-Band與18-24 GHz之低雜訊放大器”,國立虎尾科技大學電子工程系碩士論文,2020年。[7]翁敏航,“射頻被動元件設計”,東華書局,2020年。
[8]賈致靜,“高頻電路分析與設計”,全華圖書,2022年。
[9]S. Subramaniam, A. Petr and M. O. I. Ing, "Unified noise characterization technique for MOSFETs," 2017 International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, 2017, pp. 1-5.
[10]K. Kellogg, L. Dunleavy, S. Skidmore, H. Morales and C. White, "Bridging the Gap in noise spectral density measurements derived from flicker and noise figure measurement systems," 2017 IEEE 18th Wireless and Microwave Technology Conference (WAMICON), Cocoa Beach, FL, USA, 2017, pp. 1-4.
[11]H. Nyquist, “Thermal agitation of electric charge in conductor,” Phys. Rev., Vol. 32, 1928, pp. 110-113.
[12]A. Arnaud and M. R. Miguez, "Very low frequency cyclostationary 1/f noise in MOS transistors," 2013 22nd International Conference on Noise and Fluctuations (ICNF), Montpellier, France, 2013, pp. 1-4.
[13]A. Arnaud and C. Galup-Montoro, "A compact model for flicker noise in MOS transistors for analog circuit design," in IEEE Transactions on Electron Devices, vol. 50, no. 8, pp. 1815-1818, Aug. 2003.
[14]X. -M. Peng and J. Wang, "Suppressed Shot Noise of RF Short–Channel MOSFETs," 2018 2nd IEEE Advanced Information Management,Communicates,Electronic and Automation Control Conference (IMCEC), Xi'an, China, 2018, pp. 435-439.
[15]張盛富、張嘉展,“無線通訊射頻晶片模組設計”,全華圖書,2009年。
[16]張瑞安,“X頻帶接收器前端電路與E頻帶低雜訊放大器設計與實現”,國立臺灣師範大學應用電子科技學系碩士論文,2014年。[17]王珮媖,“寬頻放大器暨V頻段射頻前端接收機電路之研製”,國立中央大學電機工程研究所碩士論文,2009年。
[18]A. I. Mecwan and N. M. Devashrayee, "Linearity improvement of LNA using Derivative Superposition: Issues and challenges," 2017 7th International Conference on Cloud Computing, Data Science & Engineering - Confluence, Noida, India, 2017, pp. 759-763.
[19]鄧駿逸,“利用雜訊抵消技術之Ku-Band低雜訊放大器設計與分析”,國立交通大學電機學院電信學程學術論文,2013年。
[20]吳佳品,“應用於超寬頻低雜訊放大器與X頻帶功率放大器之pHEMT射頻晶片設計”,長庚大學電子工程研究所碩士論文,2010年。[21]A. Kryshtopin, G. Sevskiy and K. Markov, "Novel probabilistic approach for conditionally stable LNA design," 34th European Microwave Conference, 2004., Amsterdam, Netherlands, 2004, pp. 937-940.
[22]林則孝,“串接式低雜訊放大器之增益平坦度與穩定度之研究”,國立臺北科技大學電資學院電資碩士班碩士學術論文,2014年。[23]I. Brzozowski and A. Kos, "The miller effect in digital CMOS gates and power consumption analysis," 2012 International Conference on Signals and Electronic Systems (ICSES), Wroclaw, Poland, 2012, pp. 1-6.
[24]林文奕,“pHEMT小訊號和雜訊模型與其元件尺寸關係”,國立中央大學電機工程研究所碩士論文,2008年。[25]H. -C. Yang et al., "High Quality of 0.18μm CMOS 5.2GHz cascode LNA for RFID tag applications," 2013 International Symposium on Next-Generation Electronics, Kaohsiung, Taiwan, 2013, pp. 313-316.
[26]M. G. L. Kumar, S. S. Regulagadda, J. K. Das and A. Dutta, "Design of current reuse based Differential Merged LNA-Mixer (DMLNAM) and two-stage Dual Band LNA with two gain modes in 65nm technology," 2015 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics (PrimeAsia), Hyderabad, India, 2015, pp. 98-103.
[27]S. Toofan, A. Abrishamifar, A. Rahmati, M. Graziano, G. Roientan Lahiji and S. A. Moniri, "A 5.5-GHz 3mW LNA and inductive degenerative CMOS LNA noise figure calculation," 2008 International Conference on Microelectronics, Sharjah, United Arab Emirates, 2008, pp. 308-312.