本論文研究蒸鍍氧化亞銅與濺鍍氧化銅鋁對網印式單晶矽太陽能電池之光電特性影響，為了加強氧化亞銅內的電洞傳輸，因此利用各種金屬Al、In及Ag摻雜氧化亞銅來改變氧化亞銅的特性，首先利用共蒸方式探討了摻鋁氧化亞銅與氧化亞銅堆疊順序的影響，同時改變氧化亞銅中之摻雜銦及銀濃度，接著利用濺鍍技術沉積氧化銅鋁薄膜，並改變其濺鍍參數如功率、時間、工作壓力、氬氣流量及金屬電極進行探討，最後利用UV/VIS/IR光譜儀、穿透式電子顯微鏡(TEM)、紫外光光電子光譜儀(UPS)及X光光電子能譜儀(XPS)來分析氧化銅鋁的各種材料特性。
實驗結果顯示，當氧化亞銅與銀進行共蒸鍍，且鍍率分別為5.4及0.6 nm/min，可以得到最佳光電轉換效率為18.57 %，接下來獲得濺鍍銀及銅電極的最佳參數，當濺鍍氧化銅鋁搭配銅電極時，功率為10 W、時間為2.5 min、工作壓力為2 mtorr及氬氣流量為12 sccm，有最佳光電轉換效率為18.65 %，最後使用此最佳參數並改為銀電極可以獲得到最佳光電轉換效率增加為18.91 %。由上述實驗得到的最佳結果為，濺鍍功率為10 W、時間為2.5 min、工作壓力為2 mtorr、氬氣流量為12 sccm、金屬電極為銀電極，有最佳之開路電壓為623 mV、短路電流為36.73 mA/cm2、填充因子為82.67 %、串聯電阻為1.5 Ω-cm2與光電轉換效率為18.91 %之網印式單晶矽太陽能電池元件，且量測到的氧化銅鋁能隙為3.08 eV及功函數為4.16 eV。

In this thesis, the effects of evaporated cuprous oxide and sputtered CuAlO2 on photovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SPMSSCs) were explored. To enhance the transmission of hole in cuprous oxide (Cu2O), the properties of cuprous oxide were modified by various metals, including Al, In, and Ag, doped cuprous oxide. First, the stacked sequence of Al-doped Cu2O and Cu2O were presented by evaporation. Moreover, the effects of various concentrations of In and Ag in Cu2O were investigated. Furthermore, the parameters, including power, time, working pressure, Ar flow, and metal electrode, were achieved for sputtered CuAlO2. Finally, the characteristics of CuAlO2 were analyzed by UV/VIS-IR spectroscopy, transmission electron microscopy (TEM), UV photoelectron spectroscopy (UPS), and X-ray photoelectron spectroscopy (XPS), respectively.
The result shows that the conversion efficiency (CE) with 18.57 % was demonstrated at the co-evaporated rates of 5.4 and 0.6 nm/min for cuprous oxide and silver, respectively. Next, the optimum conditions of Ag electrode were also demonstrated. The CE of 18.65 % was addressed by deposited CuAlO2 /Cu stacked films at the power of 10 W for 2.5 min, working pressure of 2 mtorr, and Ar flow of 12 sccm. According to the optimum condition, the best CE with 18.91% was demonstrated by CuAlO2/Ag stacked films. Finally, the SPMSSCs with 18.91%, open circuit voltage of 623 mV, short-circuit current density of 36.73 mA/cm2, fill factor of 82.67 %, series resistance of 1.5 Ω-cm2, were performed. The CuAlO2 with bandgap of 3.08 eV, work function of 4.16 eV were demonstrated.

摘要......i
Abstract......ii
誌謝......iii
目錄......iv
表目錄......vii
圖目錄......viii
第一章 緒論......1
1.1 載子選擇性太陽能電池之文獻回顧......1
1.2 氧化亞銅摻雜不同材料之文獻回顧......2
1.3 氧化銅鋁與其他銅鐵礦之文獻回顧......3
1.4 研究動機......5
1.5 論文架構......5
第二章 實驗流程與特性量測......6
2.1 前段實驗製程......6
2.1.1 利用RCA(Radio Corporation of America) Clean標準清洗步驟來清洗矽基板並去除雜質(RCA Clean)......6
2.1.2 使用鹼性蝕刻藥液(KOH)對矽基板表面進行糙化處理(Texturing)......7
2.1.3 使用高溫擴散爐管將磷原子擴散至矽表面以形成射極(Diffusion)......7
2.1.4 藉由稀釋過的氫氟酸(DHF)去除因磷擴散所產生的磷玻璃，並進行邊緣隔絕(PSG is removed and Edge isolation by DHF)......7
2.1.5 利用電漿增強型化學氣相沉積(Plasma Enhance Chemical Vapor Deposition；PECVD)技術沉積氮化矽(SiNx)在矽基板正表面來當作抗反射層(ARC deposition)......8
2.1.6 使用網印(screen-printing)技術在抗反射層上網印銀膠並烤乾後作為金屬電極(screen print Ag on front side)......8
2.1.7 利用燒結爐對銀電極進行高溫燒結並使其刺穿抗反射層(Firing)......8
2.1.8 使用雷射機將基板切割成面積為2×2 cm2的試片大小(Laser cutting)......8
2.1.9 在面積為2×2 cm2的試片上懸塗兩層抗蝕刻膠(Polymer)用來保護正面氮化矽(SiNx)以及銀電極(Spinning coating)......9
2.1.10 利用稀釋過氫氟酸(DHF)去除矽基板背面的自然氧化層，之後把抗蝕刻膠給剝除(Native oxide is removed by DHF)......9
2.2 摻鋁之氧化亞銅與氧化亞銅的不同堆疊順序對單晶矽太陽能電池光電特性研究......9
2.2.1 將氧化亞銅與鋁進行共蒸鍍在矽基板背面並改變其結構的堆疊順序(Co-Evaporated Cu2O：Al on rear side)......9
2.2.2 蒸鍍銅金屬在矽基板背面來當作背電極(Evaporated Cu electrode on rear side)......10
2.3 在氧化亞銅內摻雜各種金屬濃度(鋁、銦及銀)對單晶矽太陽能電池光電特性研究......10
2.3.1 將氧化亞銅與金屬(鋁、銦及銅)進行共蒸鍍在矽基板背面並改變氧化亞銅的蒸鍍鍍率(Co-Evaporated Cu2O：metal on rear side)......10
2.4 濺鍍銅及銀電極的最佳參數對單晶矽太陽能電池之光電特性研究......10
2.4.1 濺鍍金屬(銅及銀)在矽基板背表面當作電極 (Sputtered metal electrode (Cu, Ag) on rear side)......11
2.5 濺鍍的功率和時間對具氧化銅鋁單晶矽太陽能電池之光電特性研究......11
2.5.1 濺鍍氧化銅鋁在矽基板背表面上並改變濺鍍的功率與時間(Sputtered CuAlO2 on rear side)......11
2.5.2 濺鍍銅金屬在矽基板背表面當銅電極 (Sputtered Cu on rear side)......11
2.6 濺鍍的工作壓力對具氧化銅鋁單晶矽太陽能電池之光電特性研究......12
2.6.1 濺鍍氧化銅鋁在矽基板背表面上並改變濺鍍的工作壓力(Sputtered CuAlO2 on rear side)......12
2.7 濺鍍的氬氣流量對具氧化銅鋁單晶矽太陽能電池之光電特性研究......12
2.7.1 濺鍍氧化銅鋁在矽基板背表面上並改變濺鍍的氬氣流量(Sputtered CuAlO2 on rear side)......12
2.8 銅及銀電極對具氧化銅鋁單晶矽太陽能電池之光電特性研究......13
2.8.1 濺鍍氧化銅鋁在矽基板背表面上(Sputtered CuAlO2 on rear side)......13
2.8.2 濺鍍金屬(銅及銀)在矽基板背表面當作電極(Sputtered metal electrode (Cu, Ag) on rear side)......13
2.9 太陽能光伏元件的特性量測......13
2.9.1 電流-電壓特性曲線量測(I-V measurement)......13
2.9.2 外部量子效率量測(EQE measurement)......13
2.9.3 穿透式電子顯微鏡(Transmission Electron Microscope, TEM)之材料分析......14
2.9.4 X光光電子能譜儀(X-ray photoelectron spectroscopy, XPS)與紫外光光電子光譜儀(UV photoelectron spectroscopy, UPS)之材料分析......14
2.9.5 UV/VIS/IR光譜儀量測之材料分析......14
第三章 蒸鍍氧化亞銅與濺鍍氧化銅鋁對網印式單晶矽太陽能電池之光電特性影響......32
3.1 氧化亞銅搭配金屬進行共蒸鍍對網印式單晶矽太陽能電池之光電特性研究......32
3.1.1 摻鋁之氧化亞銅與氧化亞銅不同堆疊順序對單晶矽太陽能電池之電流-電壓(I-V Measurement)的量測結果分析......32
3.1.2 結論......33
3.1.3 在氧化亞銅內摻雜各種金屬濃度(鋁、銦及銀)對單晶矽太陽能電池之電流-電壓(I-V Measurement)的量測結果分析......33
3.1.4 結論......35
3.2 利用濺鍍技術沉積氧化銅鋁電洞傳輸層對網印式單晶矽太陽能電池之光電特性研究......35
3.2.1 濺鍍銅及銀電極的最佳參數對單晶矽太陽能電池之電流-電壓 (I-V Measurement)及外部量子效率(EQE)的量測結果分析......35
3.2.2 結論......36
3.2.3 濺鍍的功率與時間對具氧化銅鋁單晶矽太陽能電池之電流-電壓(I-V Measurement)、外部量子效率(EQE)的量測結果分析......36
3.2.4 結論......37
3.2.5 濺鍍的工作壓力對具氧化銅鋁單晶矽太陽能電池之電流-電壓(I-V Measurement)的量測結果分析......38
3.2.6 結論......39
3.2.7 濺鍍的氬氣流量對具氧化銅鋁單晶矽太陽能電池之電流-電壓(I-V Measurement)的量測結果分析......39
3.2.8 結論......40
3.2.9 銅及銀電極對具氧化銅鋁單晶矽太陽能之電流-電壓(I-V Measurement)、穿透式電子顯微鏡(TEM)、X光光電子光譜儀(XPS)、紫外光光電子光譜儀(UPS)及UV/VIS/IR光譜儀的量測結果分析......40
3.2.10 結論......41
第四章 總結論與未來展望......63
4.1 總結論......63
4.2 未來展望......63
參考文獻......64
Extended Abstract......67
Abstract......67
Introduction......68
Experimental......68
Results and Discussion......69
Conclusion......70
References......70

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