|
[1] A. Bakker and J. Huijsing, High-Accuracy CMOS Smart Temperature Sensors. New York, NY, USA: Springer, 2001. [2] K. Nang Leung and P. K. T. Mok, ‘‘A sub-1-V 15-ppm/◦C CMOS bandgap voltage reference without requiring low threshold voltage device,’’ IEEE J. Solid-State Circuits, vol. 37, no. 4, pp. 526–530, Apr. 2002. [3] K. Nang Leung, P. K. T. Mok, and C. Yat Leung, ‘‘A 2-V 23-µA 5.3-ppm/◦C curvature-compensated CMOS bandgap voltage reference,’’ IEEE J. Solid-State Circuits, vol. 38, no. 3, pp. 561–564, Mar. 2003. [4] S. Jinggang, C. Zhiliang, and S. Bingxue, ‘‘A 1 V supply area effective CMOS bandgap reference,’’ in Proc. 5th Int. Conf. ASIC (ICASIC), Oct. 2003, pp. 619–622. [5] X. Ming, Y.-Q. Ma, Z.-K. Zhou, and B. Zhang, ‘‘A high-precision compensated CMOS bandgap voltage reference without resistors,’’ IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 57, no. 10, pp. 767–771, Oct. 2010. [6] J. H. Li, X. B. Zhang, and M. Y. Yu, ‘‘A 1.2-v piecewise curvature-corrected bandgap reference in 0.5µm CMOS process,’’ IEEE Trans. Very Large Scale Integr.(VLSI) Syst., vol. 19, no. 6, pp. 1118–1122, Jun. 2011. [7] C. M. Andreou, S. Koudounas, and J. Georgiou, ‘‘A novel WideTemperature-range, 3.9 ppm/◦C CMOS bandgap reference circuit,’’ IEEE J. Solid-State Circuits, vol. 47, no. 2, pp. 574–581, Feb. 2012. [8] B. Ma and F. Yu, ‘‘A novel 1.2–V 4.5-ppm/◦C curvature-compensated CMOS bandgap reference,’’ IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 61, no. 4, pp. 1026–1035, Apr. 2014. [9] Q. Duan and J. Roh, ‘‘A 1.2-v 4.2-ppm/◦C high-order curvaturecompensated CMOS bandgap reference,’’ IEEE Trans. Circuits Syst. I, Reg. Papers, Reg. Papers, vol. 62, no. 3, pp. 662–670, Mar. 2015. [10] L. Wang, C. Zhan, J. Tang, Y. Liu, and G. Li, "A 0.9-V 33.7-ppm/°C 85-nW Sub-Bandgap Voltage Reference Consisting of Subthreshold MOSFETs and Single BJT," IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 26, no. 10, pp. 2190-2194, 2018. [11] H.-M. Chen, C.-C. Lee, S.-H. Jheng, W.-C. Chen, and B.-Y. Lee, ‘‘A Sub-1 ppm/◦C precision bandgap reference with adjusted-temperature-curvature compensation,’’ IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 64, no. 6, pp. 1308–1317, Jun. 2017. [12] J. Jiang, W. Shu, and J. S. Chang, ‘‘A 5.6 ppm/◦C temperature coefficient, 87-dB PSRR, Sub-1-V voltage reference in 65-nm CMOS exploiting the zero-temperature-coefficient point,’’ IEEE J. Solid-State Circuits, vol. 52, no. 3, pp. 623–633, Mar. 2017.
[13] P. Malcovati, F. Maloberti, C. Fiocchi, and M. Pruzzi, ‘‘Curvaturecompensated BiCMOS bandgap with 1-V supply voltage,’’ IEEE J. SolidState Circuits, vol. 36, no. 7, pp. 1076–1081, Jul. 2001. [14] A. Becker-Gomez, T. L. Viswanathan, and T. R. Viswanathan, ‘‘A LowSupply-Voltage CMOS sub-bandgap reference,’’ IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 55, no. 7, pp. 609–613, Jul. 2008. [15] J.-M. Redoute and M. Steyaert, ‘‘Kuijk bandgap voltage reference with high immunity to EMI,’’ IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 57, no. 2, pp. 75–79, Feb. 2010. [16] L. Liu, X. Liao, and J. Mu, ‘‘A 3.6 µVrms noise, 3 ppm/◦C TC bandgap reference with Offset/noise suppression and five-piece linear compensation,’’ IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 66, no. 10, pp. 3786–3796, Oct. 2019. [17]陳毅斌. (2012, 7-13). 符合JEITA規範的鋰電池充電器解決方案. Available: https://www.digitimes.com.tw/tw/dt/n/shwnws.asp?cnlid=13&packageid=5788&id=0000272538_t5l4y1t04rkexa7hltd50&cat=65&ct=1 (accessed 10-20,2019) [18]E. C. Wire, "Elektrisola." [19]R. v. Roy. (2017, 09-01). 開關模式鋰離子電池充電IC. Available: https://www.richtek.com/Design%20Support/Technical%20Document/AN050?sc_lang=zh-TW (accessed 11-1,2019) [20]K. Souri, Y. Chae, and K. Makinwa, "A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from −55 to 125°C," in 2012 IEEE International Solid-State Circuits Conference, 2012, pp. 208-210. [21]A. Aita, M. Pertijs, K. Makinwa, J. Huijsing, and G. Meijer, "Low-Power CMOS Smart Temperature Sensor With a Batch-Calibrated Inaccuracy of From to 130," IEEE Sensors Journal, vol. 13, pp. 1840-1848, 05/01 2013. [22]M. Law, S. Lu, T. Wu, A. Bermak, P. Mak, and R. P. Martins, "A 1.1μW CMOS Smart Temperature Sensor With an Inaccuracy of ±0.2 °C (3σ) for Clinical Temperature Monitoring," IEEE Sensors Journal, vol. 16, no. 8, pp. 2272-2281, 2016.
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