本研究在矽基板上生長氧化鋅薄膜，並應用於液體感測器。首先先在矽基板上生長氧化鋅薄膜而氧化鋅的濺鍍環境為60%氬氣與40%的氧氣，濺鍍壓力為20m torr，濺鍍功率為150W，氧化鋅膜厚為3μm、5μm以及10μm，接著再把10μm的指叉狀電極製作在氧化鋅薄膜上。
氧化鋅薄膜的鑑定方式是利用X光繞射分析儀(XRD)來觀察氧化鋅的晶體取向，場發射掃描式電子顯微鏡(FE-SEM)分析薄膜結晶構造以及表面形貌分析，螢光光譜分析儀(PL)來看氧化鋅的發光特性檢測，能量散佈光譜儀(EDS)進行元素分析、晶體結構以及表面形貌進行觀察，最後要對元件進行網路分析儀(Network Analyzer)的量測，分別分析插入損耗(Insertion Loss)和相位(phase)之元件特性。而液體量測效率對於指叉狀電極寬度之影響以及激發電壓之振幅與氧化鋅進行研究，測量液體針對於不同的氧化鋅薄膜厚度進行比較，最後發現10μm的效果是最好的。

ZnO film was grown on silicon substrate for liquid sensors application. ZnO thin film was deposited on silicon by radio frequency magnetron sputtering. The sputtering power was maintained at 150 W; the sputtering pressure was 20 mtorr; the O2 / Ar ratio was 0.75; the zinc oxide film thickness were 3μm, 5μm, and 10μm, and then electrode was fabricated on the zinc oxide thin films.The crystalline structure, surface morphology and luminescent characteristics of ZnO films and nanorods were examined by X-ray diffraction, scanning electron microscopy, and photoluminescence spectrometer. The performance of the surface acoustic wave device was examined by network analyzer. The effect of liquid sensitivity on the width of the interdigitated electrode and the amplitude of the excitation voltage were studied. The device with 10 μm-thick ZnO thin film had the best performance.

中文摘要
…………………………..……………………………..…………………...i
英文摘要
…………………………..……………………………..…………………...ii
誌謝
…………………………..…………………………….…...........iii
目錄
……………….………….……………..…...………….………………..iv
表目錄
……….…………………..…………………………….…………………...vi
圖目錄
……………..….……………………………...……….. …………..Vii
第一章
緒論…………………………………….…………….…...………………..1
1.1
前言…………………………………………………..……..…. ………….1
1.2
本文架構……………………………………………….…………………..2
1.3
研究動機……………………………………………….………….…….…2
第二章
基礎理論……………………………………………….…………..………3
2.1
壓電理論…………………………………………….………......................3
2.1.1壓電效應……………………………………….………………….....3
2.1.2壓電材料………………………………………….……………….....3
2.2
表面聲波…………………………………………….………………..……5
2.3
表面聲波元件…………………………………….……………………..…6
2.3.1表面聲波元件……………………………………………..…….6
2.3.2表面聲波參數…………………………………………………….7
2.4
氧化鋅介紹…………………………………………….…….……….……10
2.5
薄膜沉積…………………………………………………………...………12
2.5.1薄膜沉積方式………………………………………………..………12
2.5.2濺鍍原理……………………...................12
2.5.3磁控濺鍍系統……………………………………………….....12
2.5.4射頻濺鍍……………………………………………………..……13
2.5.5薄膜成長……………………………………………………..……14
2.6
光吸收機制……………………………………….……………………..…15
2.7
液體量測……………………………………………..……………………16
第三章
實驗步驟與實驗分析…………………………….………………..………17
3.1
實驗流程………………………………………….………………..………17
3.2
表面聲波元件製作……………………………….………………..………18
3.2.1黃光微影製程……………………………….…………...…..…19
3.2.2氧化鋅粉靶製作……………………………….………...……….21
3.2.3氧化鋅薄膜濺鍍……………………………….………...…..…22
3.3
實驗量測設備介紹………………………………….……………..………25
3.4
元件之液體量測…………………….………………..……………………28
3.5
實驗藥品、儀器、耗材………………………………………..…..……...29
第四章
薄膜特性分析…………………………………………………..…..……...31
4.1
氧化鋅薄膜分析……………………………………………….…..………31
4.2
薄膜與光催化氣體降解……………………………………….…..………39
第五章
結果與討論…………………………………………………….…..………47
5.1
氧化鋅薄膜之液體量測與分析……………………….…..………………47
5.2
氧化鋅薄膜元件紫外光之光催化分析……………………….…..………51
第六章
結論………………………………………………………….....…..………58
參考文獻
………………………………………………………………….…..………59
Extended
Abstract …………………………………….…..…………………………63

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