臺灣博碩士論文加值系統

本實驗是利用非真空製程成長Si參雜之Cu(InGa)Se2的光伏元件之吸收層。實驗過程是先將銅硒、銦硒、鎵硒三種化合物依不同比例調配後並再添加矽，再以球磨法製成CIGS漿料，利用塗佈法將漿料塗佈於玻璃基板上形成前驅層薄膜，漿料Cu/(In+Ga)原子百分比為0.8、1.0，再將前驅層置入紅外線快速升溫爐(RTA)內分別以溫度300 oC、400 ℃、500 ℃進行快速退火製程，持溫10分鐘，使薄膜具有黃銅礦(Chalcopyrite)結構。本研究Si含量莫耳分率為0.36之薄膜在熱處理溫度300℃與400℃時皆有產生黃銅礦結構，且在400℃時薄膜的黃銅礦結構之特徵峰(112)半高寬窄，晶粒較大，促進薄膜燒結後結晶性提高，而本實驗添加Si含量莫耳分率為0.36之薄膜有二次相CuSe出現，隨著添退火熱處理溫度上升，二次相CuSe特徵峰強度越強。本實驗添加Si含量0.2g莫耳分率為0.36且經熱處理溫度400℃為最佳Cu(InGa)Se2薄膜。

The experiment used non-vacuum processes to prepare Si doped Cu(InGa)Se2 thin films as the absorber layers for the photovoltaic devices. The first step of the experimental process, according to different proportions of copper-selenium, indium-selenium and tellurium-selenium three compound powder then add pure silicon. After the CIGS slurry is prepared by the ball milling method, the slurry is coated on the substrate by spin coating to form a precursor layer film,the slurry Cu/(In+Ga) atomic percentage is 0.8, 1.0, The precursor layer is placed in an infrared rapid heating furnace (RTA) for rapid annealing at temperatures of 300 ° C, 400 ° C, and 500 ° C, respectively, and the temperature is maintained for 10 minutes to make the film produce chalcopyrite structure.
In this experiment, the film with a Molar fraction of 0.36 has a chalcopyrite structure at 300 ° C and 400 ° C, and the characteristic peak (112) of the chalcopyrite structure at 400 ° C is half-height and wide. The grain size is larger, which promotes the improvement of crystallinity after sintering of the film. In this experiment, the film with the Molar fraction of 0.36 has secondary phase CuSe. The temperature of the secondary phase CuSe characteristic peak increases with the increase of the annealing annealing heat treatment temperature. Strong. In this experiment, a Si content of 0.2 g molar fraction was 0.36 and a heat treatment temperature of 400 ° C was the best Cu (InGa) Se2 film.

摘要..................i
Abstract................ii
誌謝..................iii
目錄..................iv
表目錄..................ix
圖目錄..................x
第一章 簡介..................1
1.1前言..................1
1.2太陽能電池的分類..................1
1.3薄膜型太陽能電池..................2
1.3.1銅銦鎵硒（CIGS）薄膜太陽能電池.........3
1.3.2碲化鎘（CdTe）薄膜太陽能電池...........6
1.3.3染料敏化薄膜太陽能電池.................5
1.3.4非晶矽薄膜太陽能電池 ..................6
1.4研究動機..................6
第二章 文獻探討..................12
2.1太陽能電池工作原理..................12
2.2銅銦鎵硒(CIGS)太陽能電池製程技術..................14
2.2.1鈉(Soda-lime)玻璃與康寧(Corning)玻璃基板.......14
2.2.2鉬（Mo）金屬背電極..................15
2.2.3銅銦硒(CuInSe) / 銅銦鎵硒(CuInGaSe)主吸收層(Absorber)......16
2.2.4硫化鎘緩衝層(CdS Buffer Layer)..................19
2.2.5 ZnO以及ZnO:Al窗口層..................20
2.2.6氟化鎂（MgF2）抗反射層..................21
2.2.7鋁(Al)金屬電極..................21
2.3銅銦鎵硒吸收層製程技術..................21
2.3.1硒化法..................22
2.3.2蒸鍍法..................23
2.3.3塗佈法..................24
2.4球磨粉碎..................25
2.4.1球磨粉碎原理..................25
2.4.2機械分散法..................26
2.4.3超音波分散法..................28
2.4.4化學分散法..................27
2.5影響球磨粉碎顆粒大小的變因.............28
2.5.1結構影響.......................28
2.5.2球磨機轉速影響..................28
2.5.3乾、濕式球磨方式影響 ................28
2.5.4球磨介質充填率影響..................29
2.6快速退火RTP之熱輻射原理................29
第三章 實驗流程與分析..................35
3.1實驗方法與步驟..................35
3.1.1基板前處理..................35
3.1.2漿料配置..................36
3.1.3塗佈步驟..................36
3.1.4軟烤步驟..................36
3.1.5快速退火處理..............36
3.2 實驗設備..................37
3.2.1次微米粉末製造設備..................37
3.2.2旋轉塗佈儀..................38
3.2.3快速退火系統..................37
3.3實驗分析設備..................38
3.3.1 X光繞射儀（X-Ray Diffraction，XRD）..................38
3.3.2掃描式電子顯微鏡（Scanning Electron Microscope，SEM)...........39
3.3.3能量光譜儀（Energy Dispersive Spectrometer，EDS）..............40
3.3.4感應耦合電漿質(Inductively Coupled Plasma-Mass Spectrom etry，ICP-MS)..................42
3.3.5紫外光-可見光（UV-ViS）光譜儀..................44
第四章 結果與討論..................53
4.1 Cu(InGa)Se2薄膜成份分析..................53
4.2 Cu(InGa)Se2顯微結構分析..................55
4.2.1熱處理溫度對銅銦鎵硒薄膜顯微結構之影響..................55
4.3 Cu(InGa)Se2結晶特性分析..................56
4.3.1粉末對銅銦鎵硒初鍍膜結晶特性之影響..................57
4.3.2熱處理對銅銦鎵硒薄膜結晶特性之影響..................57
4.3.3銅對熱處理後銅銦鎵硒薄膜結晶特性之影響..................59
4.3.4不同含量矽對銅銦鎵硒薄膜特徵峰(112)之影響...............59
4.4光學特性分析..................60
第五章 結論..................74
參考文獻..................76
Extended Abstract..................80

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