臺灣博碩士論文加值系統

本篇論文以氧化鋁鋅和氧化鎳製作p-n型紫外光感測器。AZO比起ZnO有更好的導電性，載子濃度也增加其高溫穩定性，再利用氧化鎳製作p-n型紫外光感測器，提高紫外光的光響應。
第一部份:利用射頻磁控濺鍍系統(RF magnetron sputter)在ITO玻璃基板上製作AZO薄膜與NiO薄膜，改變製程的瓦數、壓力、氧氣含量、熱退火溫度,發現在低瓦數下經過高溫退火(濺鍍參數瓦數30W、壓力0.01torr、Ar:O2=12:1時，經過真空下退火550℃)可以得到高的載子濃度-1.1x1021(1/cm3)電阻率3.7x10-3 (Ωcm)；而NiO薄膜在瓦數50W、Ar:O2=5:5、壓力0.0075torr時，有最高的載子濃度2.1x1020(1/cm3)與最低的電阻率1.93x10-1(Ωcm)，增加氧氣流量比例、瓦數和降低壓力可以有效的提升載子濃度並降低電阻率，再經由紫外線/可見光分光光譜儀(UV/VIS/NIR spectrometers)分析透光率，場發射電子顯微鏡(field emission scanning electron microscope，FE-SEM)分析薄膜的表面形貌，X光繞射頻譜(X-Ray diffraction，XRD)分析薄膜的結晶情況，光激發螢光頻譜(photoluminescence，PL)查看元件的光響應波段。
第二部分:經由黃光顯影元件尺寸為1mm*1mm，使用Al為接觸電極，經365nm紫外光照射AZO/NiO紫外光感測器，發現AZO經過真空550℃下退火，和在NiO在50W、Ar/O2=5/5、壓力0.0075torr製作的元件，在偏壓-1.2V有最好的光電流-3.20982E-5，光電流為-2.26031x10-5A和光響應值為3.68 A/W。
第三部分:由前面的分析中選出最好的參數製作p-NiO/n-Zno nanorod紫外光感測元件，在經過550℃熱退火的Zno nanorod，所製成的p-NiO/n-ZnO nanoord元件有最好的光電流6.35134 x 10-5A和光響應值11.3A/W。

In this study, p-n UV sensors were fabricated using alumina zinc and nickel oxide. AZO has better conductivity than ZnO, carrier concentration also increases its high-temperature stability, and then uses nickel oxide to make a p-n-type UV sensor, improving the UV light response.
The first part: using radio frequency (RF magnetron sputter) to make AZO film and NiO film on the ITO glass substrate, it changes the tile number, pressure, oxygen content and thermal annealing temperature of the process. It is found that under high temperature annealing under low watts (splash parameter 30W, pressure 0.01torr, Ar:O2=12:1, annealed under vacuum 550℃) the high carrier concentration -1.1x1021(1/cm3) and resistivity3.7x10-3 (Ωcm) can be obtained, while the NiO film has the highest carrier concentration 2.1x1020 (1/cm3) and the lowest resistivity 1.93x10-1 (Ωcm) at 50W, Ar:O2=5:5, and pressure 0.0075torr. The increase of oxygen flow rate is more effective than the example, the tile number and the reduction of pressure. The resistivity is reduced and the light transmittance is analyzed by the ultraviolet / visible light spectrograph (UV/VIS/NIRspectrometers). Field emission electron microscopy (field emission scanning electron microscope, FE-SEM) is used to analyze the surface morphology of the film, the X optical diffraction spectrum (X-Ray diffraction, XRD) is used to analyze the crystallization of the film, and the fluorescence is excited by the fluorescence. Optical spectrum (photoluminescence, PL) looks at the light responseband of the component.
The second part: The size of the developing element is 1mm*1mm via the yellow light, using Al as the contact electrode and irradiating the AZO/NiO ultraviolet light sensor through the 365nm ultraviolet light, it is found that the AZO is annealed under a vacuum of 550℃, and in the NiO at 50W, Components fabricated with Ar :O2 = 5:5 and pressure of 0.0075 torr have the best photocurrent of -3.220982E-5 at a bias voltage of -1.2V, a photocurrent of -2.26031x10 -5A, and a photoresponse of 3.68 A/W.
The third part: select the best parameters from the previous analysis to make the p-NiO/n-Zno nanorod UV sensor. After 550℃ thermal annealing of Zno nanorod, the prepared p-NiO/n-ZnO The nanoord device has the best photocurrent of 6.35134 x 10-5A and a photo response of 11.3 A/W.

摘要...............................................................i
Abstract..........................................................ii
誌謝..............................................................iv
目錄...............................................................v
表目錄.............................................................vii
圖目錄.............................................................viii
第一章緒論.........................................................1
1-1研究背景........................................................1
1-2 研究動機.......................................................1
1-3 文獻回顧.......................................................2
第二章實驗理論......................................................3
2-1氧化鋅(Zinc oxide)材料簡介.......................................3
2-1-1氧化鋅特性.....................................................3
2-1-2氧化鋅光學性質.................................................3
2-1-3氧化鋅氧空缺與摻雜..............................................3
2-2氧化鎳特性.......................................................4
2-3薄膜濺鍍原理與奈米柱成長機制......................................4
2-3-1薄膜沉積原理...................................................4
2-3-2薄膜濺鍍原理...................................................5
2-3-3氧化鋅奈米柱成長化學反應過程.....................................6
2-3-4 內部增益......................................................6
第三章實驗步驟與方法.................................................11
3-1實驗藥品與儀器...................................................11
3-2實驗架構.........................................................12
3-2-1製作氧化鋁鋅與氧化鎳薄膜以及材料特性分析..........................12
3-2-2製作氧化鋁鋅與氧化鎳薄膜形成的p-n接面之特性分析...................13
3-3 製備氧化鋅奈米柱與氧化鎳形成的p-n接面元件..........................13
3-3-1 氧化鋅奈米柱實驗流程...........................................13
3-4氧化鋁鋅與氧化鎳p-n自外光感測器材料特性分析.........................13
3-4-1掃描電子顯微鏡(Scanning Electron Microscope, SEM)...............13
3-4-2 成份分析(energy-dispersive spectrometry, EDS).................14
3-4-3 X光繞射分析儀（X - ray Diffraction, XRD........................14
3-4-4霍爾量測(Hall Effect Measurements).............................14
3-4-5光激發光量測(Photoluminescence‚PL).............................15
第四章實驗結果與討論.................................................19
4-1 橫向氧化鋅奈米柱材料分析.........................................19
4-1-1 FE-SEM結構特性分析...........................................19
4-1-2 EDS成分分析.................................................20
4-1-3 霍爾量測分析.................................................22
4-1-4 XRD結構分析..................................................24
4-1-5 吸收穿透分析..................................................24
4-1-6 PL光譜分析...................................................24
4-2氧化鋁鋅和氧化鎳p-n型紫外光感測元件之量測分析.......................25
4-2-1 I-V量測分析...................................................25
4-2-2光響應(Responsivity)量測分析....................................26
4-2-3氧化鋁鋅和氧化鎳p-n型紫外光感測元件分析總.........................26
第五章結論...........................................................57
5-1 結論............................................................57
5-2未來展望.........................................................57
參考文獻............................................................59
Extended Abstract..................................................63

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