奇異尺寸(Magic size)的CdSe量子點(M-QDs)同時具有寬廣的表面能態放射與邊緣能帶放射，近年來這種特殊的光學性質被人們注意。然而M-QD的低量子效率(QY)、元件穩定性不佳及元件效率僅約2 lm/ W，限制了M-QD在固態照明(SSL)的應用。
因此，本研究藉由在M-QD製程中添加不同比例的鋅(1、5、10、15和20 at%)，製備CdSe:Znx量子點，探討摻雜量對於M-QD量子效率與穩定性的影響。此外，也將M-QD與CdSe:Znx量子點與環氧樹脂混合製備白光發光二極體(WLED)，藉以研究元件的特性。實驗結果顯示，鋅摻雜的比例升高，皆可獲得同時具有能帶邊緣放射及表面能態放射之CdSe量子點，其吸收波長位於404 nm，放射波長位於440及540 nm，量子效率由M-QD的18 %提升至CdSe:Zn15的36 %。全部樣品的粒徑皆為1.65±0.2 nm，形貌呈現球形。分別將M-QD與CdSe:Znx量子點置於室溫下五個月，CdSe:Zn15之量子效率提升幅度最高為5.6%/月。
分別將M-QD與CdSe:Znx量子點與環氧樹脂以不同比例(90、80、67、50、33 wt%)混合後，以413 nm紫外光晶片激發，利用convert方式封裝成白光元件。實驗結果顯示，M-QD-LED33及CdSe:Znx-LED33的演色性都在85以上，CdSe:Zn10-LED33有最高的元件效率，其值為22.3 lm/ W；而CdSe:Zn1-LED33則有最佳的元件穩定性。
由以上結果得知，我們可以通過摻雜Zn能讓M-QD量子效率與穩定性獲得提升，並利用紫外光晶片作為激發源，可得到高發光效率、高演色性及高穩定性之WLED。

The magic size CdSe quantum dots (M-QDs), which have both the surface state and band edge emission, have been pay more attention owing to their broad emission spectrum. However, the low quantum yield (QY), poor stability of device and luminous efficacy less than 2 lm/W limits their application in solid-state lighting (SSL). Therefore, based on our previous process of M-QD, the M-QD doping with different ratios of zinc (1, 5, 10, 15 and 20 at%) to form CdSe:Znx QDs were prepared. The properties of CdSe:Znx QDs, performance of M-QD and CdSe:Znx-based white light-emitting diodes (WLED) is studied.
The result shows that CdSe:Znx samples also have both the surface state and band edge emission. The absorption edge fits at 403 nm, and band edge emission and surface state emission is 438 and 540 nm. Moreover, the QY increases from 18 % of M-QD to 36 % of CdSe:Zn15. All samples have the same particle size about 1.65±0.2 nm and spherical shape. The M-QD and CdSe:Znx QDs were stored at room temperature for 5 months, and the CdSe:Zn15 has the highest QY enhancement of 5.6%/month. The M-QD and CdSe:Znx QDs are mixed with epoxy resins in different weight ratios (90, 80, 67, 50 and 33 wt%) and pumping by UV chip to form convert-typed WLED. The result shows that the CRI of M-QD-LED33 and CdSe:Znx-LED33 are higher than 85. CdSe:Zn10-LED33 have the highest luminous efficacy 22.3 lm/W and CdSe:Zn1-LED33 have the best device stability.

摘要.......i
Abstract......ii
誌謝......iv
目錄......
表目錄......vii
圖目錄......viii
第一章 前言......1
1.1 LED發展史......1
1.2白光LED......2
第二章 文獻回顧......4
2.1 量子點......4
2.1.1 量子點表面效應及鈍化......5
2.2 白光LED之製備方式......6
2.3 白光量子點......10
2.4研究動機與目的......23
第三章 實驗方法與步驟......25
3.1實驗藥品......25
3.2 CdSe:Znx量子點之製備方法......27
3.3 CdSe:Znx量子點穩定性......27
3.4 LED元件封裝及穩定性......27
3.5 CdSe量子點與LED元件之特性分析......30
第四章 結果與討論......33
4.1 CdSe:Znx量子點之合成與鑑定......33
4.1.1 光學性質分析......33
4.1.2 表面形貌及晶體結構分析......39
4.1.3 CdSe:Znx量子點之XPS與表面組成分析......43
4.1.4 CdSe:Znx量子點之實際組成......43
4.1.5M-QD與CdSe:Znx量子點之穩定性......48
4.2 CdSe白光發光二極體元件之封裝......53
4.3 CdSe:Znx白光發光二極體元件之穩定性測試......60
第五章 結論......68
參考文獻......69
Extended Abstract......76

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