臺灣博碩士論文加值系統

本研究利用射頻磁控共濺鍍系統沉積氧化鋅薄膜，以高溫爐管與快速熱退火系統在真空環境700°C熱處理，探討在不同環境熱處理之薄膜特性與光電特性，並經快速熱退火，藉由不同氣體環境(真空、氧氣、大氣、氮氣)熱處理，進一步改善氧化鋅薄膜內部之結構缺陷。研究結果顯示，不同環境熱處理氧化鋅薄膜之XRD，其氧化鋅薄膜優先成長方向皆為ZnO(002)，因為快速熱退火的熱處理時間縮短，繞射峰值越趨於明顯，半高寬值(FWHM)變小、晶粒大小也隨退火時間縮短明顯變大，且經快速熱退火在氮氣環境700°C熱處理後氧化鋅薄膜繞射峰值有最明顯提升，在不同環境熱處理氧化鋅薄膜之PL量測，可觀察到有紫外光放射(Ultra-Violet Emission；UVE)與深層缺陷放射(Deep level emission；DLE)，而最主要影響深層缺陷放射為氧缺位(Vo)，隨著快速熱退火熱處理時間縮短發現深層缺陷放射有減弱趨勢，而在紫外光區強弱為薄膜結晶性影響，由於氮氣環境熱處理後薄膜品質較好，本質氧缺位(Vo)缺陷大幅下降，使薄膜中的深層缺陷明顯降低，因此(UVE/DLE)螢光放射有最大比值。進一步在室溫下使用氧化鋅、氮化鋁靶材製作未摻雜氧化鋅薄膜與摻雜的氮化鋁-氧化鋅共濺鍍薄膜，並將未摻雜氧化鋅薄膜與氮化鋁-氧化鋅共濺鍍薄膜沉積在p型氮化鎵磊晶層上製作出異質結構及雙異質結構LED，量測元件的電流-電壓特性與光激發螢光光譜圖，研究結果顯示，AlN-ZnO/ZnO雙異質結構能增強能帶邊緣放射並能夠抑制氧缺陷。從電激發光光譜量測中觀察到主要的兩個發光波段，分別為位於380 nm屬於氧化鋅能帶邊緣放射與較廣區域的長波段發光，並觀察不同熱退火條件下製備之元件在不同發光波段的強度變化，對於異質結構發光元件發光特性，觀察到經快速熱退火熱處理，能降低O原子擴散，使Ga-O層較不明顯；相較於異質結構，在雙異質結構發光元件發光特性，發現AlN-ZnO載子侷限層有效阻檔Ga原子擴散，使Ga-O層更不明顯，並在氮氣環境熱處理後ZnO NBE強度最高，並有最好的單光性。

In this study, Zinc Oxide film was deposited by a RF magnetron sputtering system. The film characteristics and photoelectric properties of the 700 °Ｃ high temperature furnace tube and the rapid thermal annealing system were investigated at different time. The heat treatment of the heat treatment at different time and the heat treatment of different gas environments (vacuum, oxygen, atmosphere, nitrogen) was used. To further improve the structural defects of Zinc Oxide film. The results show that the preferred growth direction of the Zinc Oxide film in different ambient heat treated Zinc Oxide films is (002), and because the heat treatment time of the fast annealing is shorter, the diffraction peak is more obvious, the half width value (FWHM) becomes smaller and the grain size decreases obviously with the annealing time, and the 700 °Ｃ nitrogen ring is also reduced. The (002) diffraction peak of the rapid thermal annealing Zinc Oxide film is the most obvious. In the PL measurement of Zinc Oxide thin films with different ambient heat treatment, the ultraviolet radiation (Ultra-Violet Emission; UVE) and the deep defect radiation (Deep level emission; DLE) are observed, and the deep layer defects are affected by the oxygen vacancy (Vo), with the rapid thermal annealing. When the heat treatment time shortened, it was found that the depth of the deep defect was weakened, and the intensity of the ultraviolet light region was the crystallinity of the film. The film quality was better after the thermal annealing of nitrogen environment, the intrinsic oxygen vacancy (Vo) decreased significantly, and the deep defects in the thin film decreased obviously, and the maximum ratio of this (UVE/DLE) fluorescence radiation was obtained. At room temperature, Zinc Oxide and AlN targets were further used to produce an undoped Zinc Oxide film and doped aluminum nitride - Zinc Oxide sputtering film. The heterostructure and double heterostructure of the undoped Zinc Oxide film and aluminum nitride - Zinc Oxide co - plating film on the p type nitride epitaxial layer were produced, and the electrical measurements of the components were measured. The flow voltage characteristics and light excited fluorescence spectra show that the AlN-ZnO/ZnO dual heterostructure can enhance the energy band edge radiation and inhibit oxygen defects. While the vacuum environment heat treatment, the high density of the carrier reduces the equivalent barrier of the interface, and the starting voltage and the series electrical resistance will decrease. The main two luminescent bands are observed from the electric luminescence spectrum measurement, which are 380 nm in the long band of the Zinc Oxide energy band edge radiation and in the wider region, and the influence of the intensity changes of the components prepared at different thermal annealing conditions to the light emission characteristics is observed. It is observed that the Ga-O layer is less obvious by the rapid thermal annealing treatment, which can reduce the diffusion of O atoms and make the Ga-O layer less obvious. Compared with the heterostructure, it is found that the AlN-ZnO carrier is limited to the layer of the effective resistance to the diffusion of the layer, which makes the Ga-O layer less obvious, and the ZnO NBE strength is the highest after the nitrogen environment heat treatment. There is the best single light.

摘要......i
Abstract......ii
誌謝......iv
目錄......v
表目錄......vii
圖目錄......viii
第一章 緒論......1
1.1 前言......1
1.2 文獻回顧......2
1.2.1 氧化鋅薄膜熱處理特性......2
1.2.2 氧化鋅異質結構發光二極體......2
1.2.3 氮化鋁-氧化鋅共濺鍍薄膜......3
1.2.4 氧化鋅雙異質結構發光二極體......3
1.3 研究動機與目的......4
第二章 理論基礎......9
2.1 電漿理論......9
2.2 射頻磁控濺鍍原理......9
2.3 薄膜成核理論......10
2.4材料特性簡介......10
2.4.1氧化鋅薄膜......10
2.4.2氮化鎵薄膜......11
2.4.3氧化銦錫薄膜......11
2.4.4氮化鋁薄膜......12
2.5 LED發光機制......12
2.5.1直接發光與間接發光......12
2.5.2載子注入......13
2.6金屬與半導體接觸理論......14
2.6.1 歐姆接觸理論......14
2.7傳輸線模型......15
第三章 實驗製程方法與步驟......25
3.1 實驗流程說明......25
3.2 共濺鍍薄膜製作流程......25
3.2.1 共濺鍍系統......25
3.2.2 基板清洗......26
3.2.3 薄膜沉積......26
3.3 傳輸線模型製程......27
3.4 二極體製程......27
3.5 實驗儀器量測原理......28
3.5.1 表面輪廓分析儀......28
3.5.2 霍爾效應量測系統......28
3.5.3 歐傑電子能譜儀......29
3.5.4 半導體參數分析儀......29
3.5.5 光激發螢光量測系統......29
3.5.6 電激發螢光量測系統......30
第四章 結果與討論......39
4.1 快速熱退火處理氧化鋅薄膜特性分析......39
4.1.1快速熱退火處理氧化鋅薄膜之光電特性分析......39
4.1.2快速熱退火處理氧化鋅薄膜之材料及表面.結構特性分析......40
4.1.3快速熱退火處理氧化鋅薄膜於雙異質結構特性分析......41
4.2 不同環境快速熱退火處理氧化鋅薄膜特性分析......41
4.2.1不同環境快速熱退火處理氧化鋅薄膜之光電特性分析......42
4.2.2不同環境快速熱退火處理氧化鋅薄膜之材料及表面.結構特性分析......43
4.2.3不同環境速熱退火處理氧化鋅薄膜於雙異質結構特性分析......44
4.3 快速熱退火氧化鋅異質結構與雙異質結構發光二極體特性分析......45
4.3.1快速熱退火氧化鋅異質結構發光二極體特性分析......45
4.3.2快速熱退火氧化鋅雙異質結構發光二極體元件特性分析......45
第五章 結論與未來工作......84
參考文獻......86
Extended Abstract......92

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