本論文首先探討網印式銀膠搭配氧化鉬電洞選擇性傳輸層對單晶矽太陽能電池光電特性影響，因為氧化鉬電洞選擇性傳輸層暴露於大氣中，其可靠度及與矽接面附著力不佳，因此本研究採用網印式銀膠覆蓋在氧化鉬電洞選擇性傳輸層上，藉由改變網印式銀膠的不同加熱溫度及時間、雷射穿孔的雷射功率及損傷化學蝕刻製程，探討對單晶矽太陽能電池光電特性影響，接著研究氟化鋰電子選擇性及氧化鉬電洞選擇性傳輸層在無摻雜正負接面指叉狀背接觸式單晶矽太陽能電池光電特性之影響，改變矽表面的形貌如糙化面及拋光面對氟化鋰電子選擇性傳輸層的影響，改變氧化鉬電洞選擇性與氟化鋰電子選擇性傳輸層的蒸鍍順序影響。
實驗結果顯示，當氧化鉬/蒸鍍銀堆疊層覆蓋一層網印式銀膠，且銀膠經過125 oC的烤乾溫度及烤乾時間為5分鐘可改善氧化鉬電洞選擇性傳輸層的可靠度，其最佳效光電轉換效率為18.3%，當雷射功率為1.6 W且經過KOH損傷蝕刻製程為0.5分鐘，可增加附著力為0.6牛頓。氟化鋰電子選擇性傳輸層與拋光的矽表面接觸比糙化面有較佳的光電特性，先蒸鍍氧化鉬再蒸鍍氟化鋰比先蒸鍍氟化鋰再蒸鍍氧化鉬對無摻雜正負接面指叉狀背接觸式單晶矽太陽能電池可提升4.7%的光電轉換效率。

In this thesis, photovoltaic characteristics of screen-printed monocrystalline silicon solar cells (SPMSCs) were presented by combined screen-printed silver paste and molybdenum oxide (MoO2) hole-selective contact layers. Reliability and adhesion between MoO2 and silicon substrate were reduced by MoO2 exposed to the atmosphere. Thus, in this work, the silver paste was screen-printed on the MoO2 layer. The parameters, including various post-deposition-annealing temperatures and time, laser drilling power, as well as laser damage etching processes, were achieved to improve the photovoltaic characteristics of SPMSCs. Furthermore, the effects of LiFx electron-selective and MoO2 hole-selective contact layers on photovoltaic characteristics of the doping-free interdigitated back contact (IBC) silicon solar cells were investigated. The effects of the polished and textured surface on electrical properties of the LiFx layers were achieved. The sequences in LiFx and MoO2 contact layers were also investigated. Finally, the effects of the contact fraction for LiFx and MoO2 contact layers were addressed.
The results indicated that the reliability and photovoltaic characteristics of the MoO2 were enhanced by a covered silver paste annealed at 125 oC for 5 min. A adhesion of 0.6 N was increased by a laser power of 1.6 W and a laser damage etching of 0.5 min. The electrical properties between LiFx contact layer and silicon substrate were improved by the polished surface. The deposition of MoO2 followed by evaporation of LiFx is better than the deposition of LiFx followed by evaporation of MoO2.

摘要………………………………………………………………………………i
Abstract………………………………………………………………………………ii
誌謝………………………………………………………………………………iii
目錄………………………………………………………………………………iv
表目錄………………………………………………………………………………vii
圖目錄………………………………………………………………………………viii
第一章………………………………………………………………………………1
1.1載子選擇性傳輸層應用之文獻回顧………………………………………………………………………………1
1.2雷射應用於附著力改善之文獻回顧………………………………………………………………………………3
1.3無摻雜正負接面接觸式太陽能電池之文獻回顧………………………………………………………………………………4
1.4 研究動機………………………………………………………………………………5
1.5 論文架構………………………………………………………………………………5
第二章 實驗與特性量測………………………………………………………………………………6
2.1 此實驗使用的所有製程………………………………………………………………………………6
2.1.1 RCA clean清洗矽表面汙染物………………………………………………………………………………6
2.1.2使用氫氧化鉀(KOH)搭配異丙醇(IPA)對矽表面進行糙化處理………………………………………………………………………………7
2.1.3使用高溫爐管在P-type基板上進行磷擴散，形成射極(n+)………………………………………………………………………………7
2.1.4使用稀釋氟酸(DHF)移除磷玻璃(PSG)………………………………………………………………………………7
2.1.5使用PECVD於前表面沉積氮化矽抗反射層(ARC)………………………………………………………………………………7
2.1.6雷射切割 (Laser cutting)………………………………………………………………………………8
2.1.7在前表面使用網印技術網印正電極銀膠………………………………………………………………………………8
2.1.8高溫燒結技術………………………………………………………………………………8
2.1.9雷射開孔製程………………………………………………………………………………8
2.1.10旋塗抗蝕刻阻擋膠於前表面………………………………………………………………………………8
2.1.11藉由氫氧化鉀(KOH)混合蝕刻溶液對雷射損傷處理………………………………………………………………………………8
2.1.12藉由稀釋氟酸(DHF)去除表面氧化層………………………………………………………………………………9
2.1.13蒸鍍二氧化鉬薄膜………………………………………………………………………………9
2.1.14蒸鍍銀電極堆疊於二氧化鉬薄膜層………………………………………………………………………………9
2.1.15在背表面使用網印技術網印電極銀膠………………………………………………………………………………9
2.1.16藉由RTA於矽表面進行乾氧氧化製程長出二氧化矽………………………………………………………………………………9
2.1.17藉由酸性蝕刻於矽背表面進行拋光製程………………………………………………………………………………10
2.1.18蒸鍍氟化鋰薄膜層………………………………………………………………………………10
2.1.19蒸鍍鋁電極堆疊於氟化鋰薄膜層 ………………………………………………………………………………10
2.2 網印式銀膠搭配氧化鉬電洞選擇性傳輸層對單晶矽太陽能電池光電特性影響………………………………………………………………………………10
2.2.1本實驗前段流程………………………………………………………………………………10
2.2.2比較銀膠不同烤乾溫度對光電效率的影響………………………………………………………………………………10
2.2.3比較銀膠不同烤乾時間對光電效率的影響………………………………………………………………………………11
2.2.4先蒸鍍銀再網印銀膠改變不同烤乾溫度對光電效率的影響………………………………………………………………………………11
2.2.5改變網印銀膠網目對光電效率的影響………………………………………………………………………………11
2.2.6改變不同雷射功率及圖案增加背電極Ag附著力………………………………………………………………………………11
2.2.7使用雷掃射改變不同雷射功率及圖案提升背電極Ag附著力………………………………………………………………………………11
2.2.8改變KOH蝕刻損傷時間………………………………………………………………………………11
2.2.9改變雷射圖形間距增加背電極Ag附著力………………………………………………………………………………12
2.3 氟化鋰電子選擇性及氧化鉬電洞選擇性傳輸層在無摻雜正負接面指叉狀背接觸式單晶矽太陽能電池光電特性之研究………………………………………………………………………………12
2.3.1 SiNx是否沉積到背面影響無摻雜太陽能電池之光電特性………………………………………………………………………………12
2.3.2改變氧化鉬/銀及氟化鋰/鋁的蒸鍍順序………………………………………………………………………………12
2.3.3改變氟化鋰的厚度對無摻雜太陽能電池光電特性影響………………………………………………………………………………12
2.4 太陽能電池特性量測………………………………………………………………………………12
2.4.1太陽能電池光電轉換效率之電性量測………………………………………………………………………………12
2.4.2掃描式電子顯微鏡(Scanning Electron Microscope；SEM)………………………………………………………………………………13
2.4.3拉力測試………………………………………………………………………………13
第三章 網印式銀膠與各種載子選擇性傳輸層對單晶矽太陽能電池之光電特性研究………………………………………………………………………………38
3.1網印式銀膠搭配氧化鉬電洞選擇性傳輸層對單晶矽太陽能電池光電特性影響………………………………………………………………………………38
3.1.1比較銀膠不同烤乾溫度對光電效率的影響………………………………………………………………………………38
3.1.2比較銀膠不同烤乾時間對光電效率的影響………………………………………………………………………………39
3.1.3先蒸鍍銀再網印銀膠改變不同烤乾溫度對光電效率的影響………………………………………………………………………………40
3.1.4改變網印銀膠網目對光電效率及附著力的影響………………………………………………………………………………40
3.1.5改變不同雷射功率及圖案增加背電極Ag附著力………………………………………………………………………………41
3.1.6使用雷掃射改變不同雷射功率及圖案提升背電極Ag附著力………………………………………………………………………………42
3.1.7改變KOH蝕刻損傷時間………………………………………………………………………………42
3.1.8改變雷射圖形間距增加背電極Ag附著力………………………………………………………………………………43
3.2氟化鋰電子選擇性及氧化鉬電洞選擇性傳輸層在無摻雜正負接面指叉狀背接觸式單晶矽太陽能電池光電特性之研究………………………………………………………………………………44
3.2.1 SiNx是否沉積到背面影響無摻雜太陽能電池之光電特性………………………………………………………………………………44
3.2.2改變氧化鉬/銀及氟化鋰/鋁的蒸鍍順序………………………………………………………………………………45
3.2.3改變氟化鋰的厚度對無摻雜太陽能電池光電特性影響………………………………………………………………………………45
第四章 總結論與未來展望………………………………………………………………………………94
4.1 總結論………………………………………………………………………………94
4.2 未來展望………………………………………………………………………………94
參考文獻………………………………………………………………………………95
Extended Abstract………………………………………………………………………………98

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