臺灣博碩士論文加值系統

本研究主要使用噴射式大氣電漿束，進行矽晶片之電漿蝕刻。於使用不同之氟碳單體於改變功率、氣體流率、工作距離及混合氣體比例下，於外管通入四氟甲烷與八氟環丁烷與氬氣電漿進行混合，並進行電漿蝕刻。此外，搭配高解析度紅外線熱感應器可印證本研究為低溫電漿製程。藉由表面輪廓儀（Surface Profilometer, α-step）探測蝕刻之深度與二維、三維表面形態，並搭配掃描式電子顯微鏡（Scanning Electron Microscopy, SEM）印證其電漿蝕刻後，矽晶圓表面之形態。於通入八氟環丁烷流率為250 sccm且工作距離於6 mm時，蝕刻速率可達7.2 μm/min。利用噴射式大氣電漿束接觸與不銹鋼遮罩搭配之矽晶圓，可於矽晶圓之表面蝕刻微米級之蝕刻圖案，其蝕刻之圖形直徑小於50 μm。

In this study, research effort was given to the study of atmospheric-pressure plasma etching with octafluorocyclobutane and tetrafluoromethane monomers. A capacitive coupled radio frequency (RF) double-pipe atmospheric-pressure plasma jet is used for the etching process. An argon carrier gas is fed through the atmospheric-pressure plasma source. Etchings were carried out on a Si wafer substrate. Si etching rates can be controlled by the etch gas composition and the plasma conditions. From the result, we could improve the etching rate to 7.2 μm/min at 250 sccm octafluorocyclobutane flow rate.

摘要 I
Abstract II
致謝 III
總目錄 V
表目錄 VIII
圖目錄 IX
第一章 緒論 1
1.1前言 1
第二章 基礎理論與文獻回顧 4
2.1 電漿概述 4
2.1.1 電漿原理 4
2.1.2 電漿化學反應 10
2.2大氣電漿簡介 12
2.2.1大氣電漿原理 12
2.2.2大氣電漿裝置 14
2.3電漿表面改質 18
2.3.1電漿表面活化 18
2.3.2 電漿表面誘導接枝 19
2.3.3電漿聚合 19
2.4電漿蝕刻 20
2.5文獻回顧 20
第三章 實驗方法與分析儀器 24
3.1實驗目的 24
3.2實驗方法 25
3.2.1實驗系統 25
3.2.2實驗步驟 30
3.2.2.1基材準備 30
3.2.2.2 基材清潔流程 30
3.3分析儀器 31
3.3.1光放射光譜儀 32
3.3.2掃描式電子顯微鏡、微區能量元素分析儀 33
3.3.3表面輪廓儀 34
3.3.4高解析紅外線熱感應器 35
第四章 結果與討論 36
4.1電漿蝕刻參數 37
4.2改變氣體流率對矽晶圓之蝕刻 38
4.3改變工作距離對矽晶圓之蝕刻 50
4.4改變電漿功率對矽晶圓之蝕刻 56
4.5改變反應性氣體對矽晶圓之蝕刻 63
4.6改變混合氣體比率對矽晶圓之蝕刻 77
4.7 製備微米尺寸之蝕刻圖案 94
4.8 電漿操作之溫度 94
第五章 結論 99
參考文獻 100
附錄A 噴射式大氣電漿束沉積碳膜 109
附錄B 通入C4F8之電性分析 115
附錄C 利用大氣電漿對聚甲基丙烯酸甲酯之表面改質 118

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