臺灣博碩士論文加值系統

氧化鋅為Ⅱ-Ⅵ族化合物半導體，具有直接能隙的能帶結構(能隙3.37eV)，且激子束縛能為60meV。由於氧化鋅具有高透光率以及低電阻率的特性，所以氧化鋅被認為是非常具有未來性的光電材料。本研究以濺鍍法於ITO基板沉積氧化鋅薄膜，再透過水熱法生長硫摻雜氧化鋅奈米柱結構。接著透過場發射掃掃描式電子顯微鏡(FE-SEM)、穿透式電子顯微鏡(TEM)分析硫摻雜氧化鋅奈米柱的型態；X光能譜散佈分析儀(EDS)、二次離子質譜儀(SIMS)分析硫是否摻雜入氧化鋅奈米柱；X光繞射分析儀(XRD)、光激發螢光光譜儀(PL)分析硫摻雜氧化鋅奈米柱結晶與光學特性。
本研究以ITO蝕刻膏定義圖形，在透過濺鍍法於ITO基板沉積鋁薄膜備製電極，然後與硫摻雜氧化鋅奈米柱組裝成奈米發電機，利用超聲波驅動其奈米發電機。本研究以硫摻雜濃度為0.005mol為最佳參數，奈米發電機的量測結果分別為平均電壓150mV、平均電流為0.16μA、平均功率為24nW。

Zinc oxide is II-VI compound semiconductor with a direct bandgap energy band structure (energy gap of 3.37 eV) and it also has large exction binding energy 60 meV. In addition, ZnO has the characteristic of low resistivity and high transparency, therefore, it is considered as a promising material for the application of the optoelectronics. In this study, ZnO film is deposited by sputter on ITO glass substrate, and Sulfur-doped ZnO nanorod Arrays structure are grown by hydrothermal method. Then, the shape of Sulfur-doped ZnO nanorod Arrays was analyzed by field Emission Scanning Electron Microscope (FE-SEM) and Transmission Electron Microscope (TEM). Analysis of Sulfur-doping into ZnO nanorod Arrays by Energy-Dispersive Spectroscopy (EDS) and Secondary Ion Mass Spectrometry (SIMS). Analysis of Sulfur-doping ZnO nanorod Arrays was crystallization and optical properties by Spectrum Analysis (XRD) and Fluorescence Spectroscopy (PL).
In this study, the ITO etching paste was used to define the pattern. An electrode of Aluminum film was deposited on the ITO substrate by sputtering, then assembled with a sulfur-doped ZnO nanorod Arrays to form a nanogenerators, Using ultrasonic was driven nanogenerators. In this study, Sulfur-doping concentration of 0.005 mol is the best parameter, and the nanogenerator are measured with an average voltage of 150 mV, an average current of 0.16 μA, and an average power of 24 nW, respectively.

摘要……………………………………………………………………………i
Abstract……………………………………………………………………………ii
誌謝……………………………………………………………………………iii
目錄……………………………………………………………………………iv
表目錄……………………………………………………………………………vi
圖目錄……………………………………………………………………………vii
第一章 緒論……………………………………………………………………………1
1.1 前言……………………………………………………………………………1
1.2 研究動機……………………………………………………………………………2
第二章 基礎概念…………………………………………………………………………3
2.1 氧化鋅的基本特性……………………………………………………………………3
2.1.1 氧化鋅不同型態的結構……………………………………………………………4
2.1.2 氧化鋅之光學特性…………………………………………………………………4
2.2 ITO蝕刻膏……………………………………………………………………………5
2.3 水熱法……………………………………………………………………………5
2.3.1 水熱法的優點……………………………………………………………………… 6
2.4 成長氧化鋅奈米柱的反應流程………………………………………………………6
2.5 成長氧化鋅奈米柱摻硫的反應流程………………………………………………7
2.6 濺鍍原理…………………………………………………………………………7
2.6.1 射頻磁控濺鍍原理…………………………………………………………………8
2.6.2 射頻濺鍍的優點……………………………………………………………………8
2.7 壓電效應原理………………………………………………………………………8
2.7.1 壓電效應的介紹…………………………………………………………………10
第三章 實驗步驟………………………………………………………………………17
3.1 實驗架構……………………………………………………………………………17
3.2 使用的機台與藥品…………………………………………………………………17
3.3 基板的準備………………………………………………………………………18
3.4 上電極的製作………………………………………………………………………18
3.5 場發射掃描式電子顯微鏡…………………………………………………………18
3.6 穿透式電子顯微鏡…………………………………………………………………19
3.7 X光能譜散佈分析儀………………………………………………………………19
3.8二次離子質譜儀……………………………………………………………………20
3.9X光繞射分析儀………………………………………………………………………20
3.10光激發螢光光譜儀…………………………………………………………………21
第四章 結果與討論……………………………………………………………………29
4.1 硫摻雜氧化鋅奈米柱備制…………………………………………………………29
4.2硫摻雜氧化鋅奈米柱之表面型態分析……………………………………………29
4.3硫摻雜氧化鋅奈米柱之穿透式電子顯微鏡分析…………………………………30
4.4硫摻雜氧化鋅奈米柱之X光能譜散佈分析…………………………………………30
4.5硫摻雜氧化鋅奈米柱之二次離子質譜儀分析……………………………………31
4.6硫摻雜氧化鋅奈米柱之X光繞射分析………………………………………………31
4.7硫摻雜氧化鋅奈米柱之光激發螢光光譜分析……………………………………31
4.8硫摻雜氧化鋅奈米柱之自發電元件特性分析……………………………………32
4.9結論…………………………………………………………………………………33
4.10未來展望……………………………………………………………………………33
參考文獻………………………………………………………………………………53
Extended Abstract………………………………………………………………………56
Abstract…………………………………………………………………………………56

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