本論文主要研究X-Band以及Ku-Band之低雜訊放大器(Low Noise Amplifer, LNA)電路，本研究是採用穩懋半導體公司(WIN Semiconductors Corp)0.15μm pHEMT製程來實現電路。電路採用之設計包含疊接式架構、串接式架構和迴授式架構，對電路架構之模擬與量測結果進行分析比較。

第一部分主要是設計是一個 X-Band 低雜訊放大器(Low Noise Amplifier , LNA)，設計的頻段為8GHz-12GHz。主要的電路架構是採用疊接式架構。使用疊接式架構主要可以改善米勒效應，消除多餘的雜散電容。電路並使用電容與電感做為輸入阻抗匹配與輸出阻抗匹配。此放大器模擬之增益模為10.28~12.55 dB，輸入返射損耗為-14.01~-32.61 dB，輸出返射損耗為-10.07~-20.76 dB，隔離度為-18.97~-23.55 dB，雜訊指數為1.59~2.05 dB。

第二部分主要是設計是一個 Ku-Band 低雜訊放大器，設計的頻段為12GHz-18GHz。主要的電路架構是採用串接式架構、疊接式架構和迴授式架構。使用串接式架構主要可以提高增益與擁有較佳隔離度，用疊接式架構可改善米勒效應，消除多餘的雜散電容，並使用迴授式架構使增益平坦化增加電路穩定性。此放大器模擬之增益為 10.31~17.68 dB，輸入返射損耗為-10.98~-20.15 dB，輸出返射損耗為-10.74~-11.43 dB，隔離度為-33.58~-40.69 dB，雜訊指數為1.84~2.95 dB。

In this thesis, the research mainly focused on the designs of the X-Band and Ku-Band Low Noise Amplifiers(LNAs). The circuits adopt the 0.15μm pHEMT fabrication process provided by WIN Semiconductor. The circuit structures include the cascade architecture, cascode architecture, and negative feedback architecture. The measured results are compared with the simulation results.

The first part is the design of a X-Band Low Noise Amplifier. The designed frequency is 8GHz-12GHz. The main circuit structure is a cascode architecture. Using the cascode architecture is mainly to suppress the miller effect, eliminate errors caused by stray capacitance. The circuit alos uses capacitors and inductors as input impedance matching and output impedance matching. The simulation results of the designed amplifier have shown the Gain 10.28~12.55 dB, Input Return Loss -14.01~-32.61 dB, Output Return Loss -10.07~-20.76 dB, Isolation -18.97~-23.55 dB, and Noise Figure 1.59~2.05 dB.

The second part is the design is a Ku-Band Low Noise Amplifier, The designed frequency is 12GHz-18GHz. The main circuit architecture adopts cascade architecture, cascade architecture, and negative feedback architecture. The usage of a cascade architecture can increase the gain and have a better isolation. The miller effect and the errors by stray capacitance can be suppressed with the cascode architecture. A flattening gain is obtained by using a feedback architecture and the circuit stability is increased. The simulation results of the amplifier have shown the Gain 10.31~17.68 dB, Input Return Loss -10.98~-20.15 dB, Output Return Loss -10.74~-11.43 dB, Isolation -33.58~-40.69 dB, and Noise Figure1.84~2.95 dB.

摘要................................................................................i
Abstract............................................................................ii
誌謝................................................................................iv
目錄................................................................................v
表目錄..............................................................................vii
圖目錄..............................................................................viii
第一章緒論..........................................................................1
1.1研究背景.........................................................................1
1.2研究目的.........................................................................2
1.3章節介紹.........................................................................3
第二章基本原理.......................................................................4
2.1簡介.............................................................................4
2.2散射參數.........................................................................4
2.3雜訊指數(Noise Figure)...........................................................6
2.3.1散射雜訊(Shot Noise)...........................................................6
2.3.2熱雜訊(Thermal Noise)..........................................................7
2.3.3閃爍雜訊(Flicker Noise)........................................................8
2.3.4高電場擴散雜訊(High-Field Diffusion Noise).....................................9
2.3.5雜訊指數(Noise Figure；NF).....................................................9
2.3.6等效雜訊溫度...................................................................10
2.3.7多級放大電路之雜訊計算..........................................................12
2.4米勒效應(Miller Effect)..........................................................14
2.5線性度(Linearity)................................................................15
2.5.1 1dB增益壓縮點(1dB Compression Point, P1dB)....................................15
2.5.2第三階截止功率IIP3(Input 3rd-Order Intercept Point,IIP3).......................16
2.6穩定度(Stability)...............................................................17
2.7反向隔離度.......................................................................20
2.8 0.15μm pHEMT小訊號模型建立......................................................20
2.9低雜訊放大器架構.................................................................21
2.9.1迴授式放大器(Feedback Amplifier)...............................................21
2.9.2疊接式架構(Cascode Construction)...............................................22
2.9.3電流再利用架構(Current-Reuse Construction).....................................22
2.9.4源極電感退化式寬頻放大器(Inductive Source Degeneration Amplifier)...............23
2.9.5散佈式放大器(Distribute Amplifier).............................................24
第三章X-band低雜訊放大器之設計.......................................................25
3.1設計目的.........................................................................25
3.2設計流程.........................................................................25
3.3電路設計.........................................................................27
3.4模擬結果.........................................................................30
3.5量測結果.........................................................................36
3.6結論與討論.......................................................................41
第四章 Ku-Band低雜訊放大器之設計.....................................................42
4.1設計目的.........................................................................42
4.2設計流程.........................................................................42
4.3電路設計.........................................................................43
4.4模擬結果.........................................................................46
4.5量測結果.........................................................................52
4.6結果與討論.......................................................................57
第五章 結論與未來展望................................................................58
參考文獻............................................................................59
Extended Abstract..................................................................61

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