臺灣博碩士論文加值系統

本論文首先探討蒸鍍式製程5 mm x 5 mm發光面積的Glass/ITO藍光有機發光二極體，首先將電洞注入層內加入客體材料(dopant)，整體元件的電洞注入能力提高，使元件在8V外加電壓下，電流效率由0.19 cd/A提升至0.82 cd/A。接著調變完成元件去改變電子傳輸層厚度，將厚度由20 nm提升到30 nm，元件將電子傳輸至發光層能力得到提升，在8V外加電壓下，電流效率由0.82 cd/A提升至3 cd/A。最後調升發光層摻雜濃度，將原本摻雜濃度為3%提高至5%，使電子-電洞更容易讓發光層內的主體材料將能量傳遞給客體材料發光，在8V外加電壓下，元件效率最終由3 cd/A提高至3.7 cd/A。
接著探討製程10 mm x 10 mm發光面積的軟性PET/AgNW基板，元件結構以PET/AgNW/ PEODT:PSS/NPB/Alq3/TPBi/LiF/Al作為主要製程，首先調變PEDOT:PSS厚度，由原本1層提高到2層再提高至3層，會使元件的電洞注入能力也會跟著厚度提高，在8V外加電壓下，元件亮度由58 cd/m2先提升到292 cd/m2再提升至479 cd/m2。第二以3層的PEDOT:PSS元件再做NPB厚度調整，將NPB厚度由40 nm提高到50 nm，使電洞傳遞至發光層有再次提升，在8V外加電壓下，元件由479 cd/m2提升到605 cd/m2。
最後探討量子點(QD)有機發光二極體，將QD做為發光層以製備元件，並以優化過的TPBi/Alq3厚度作為電子傳遞的結構，其元件結構為：Glass/ITO/PEDOT:PSS/ Poly-TPD/QD/TPBi/Alq3/ LiF/Al，並與發光層為Alq3綠光元件做比較，在8V外加電壓下，QD元件與Alq3發光元件之亮度分別為562 cd/m2與218 cd/m2，效率為2.97 cd/A與1.95 cd/A，由此可以發現QD所激發出的光強度比常見的Alq3還要高。

In this paper, Glass/ITO blue-emitting organic light-emitting diodes with 5 mm x 5 mm luminous area by evaporation plating process are discussed firstly. First, dopant is added into the hole injection layer. First, dopant is added into the injection layer of the holes. The holes injection ability of the whole device is improved, and the efficiency of the device is increased from 0.19 cd/A to 0.82 cd/A at 8V applied voltage. Then, the tuning element is used to change the thickness of the electron transport layer, and the thickness is increased from 20 nm to 30 nm. The ability of the element to transmit electrons to the luminescent layer is improved, and the efficiency of the element is increased from 0.82 cd/A to 3 cd/A at 8V applied voltage. Finally, the doping concentration of the emitting layer is adjusted to increase the original doping concentration from 3% to 5%, which makes it easier for the main material in the emitting layer to transmit energy to the guest material to emit light, At the applied voltage of 8V, the efficiency of the device is ultimately increased from 3 cd/A to 3.7 cd/A.
Then, the flexible PET/AgNW substrate with 10 mm x 10 mm luminous area is discussed. The device structure is mainly composed of PET/AgNW/PEODT:PSS/NPB/ Alq3/TPBi/LiF/Al. The thickness of PEDOT:PSS is first adjusted from the original one layer to the two layer and then to the three layers, which will increase the hole injection ability of the device. The brightness of the device increases from 58 cd/m2 to 292 cd/m2 and then to 479 cd/m2 at the 8V applied voltage. Secondly, the thickness of NPB will be adjusted by three layers of PEDOT: PSS device, and the thickness of NPB will be increased from 40 nm to 50 nm, so that the hole transmission to the emitting layer will be enhanced again, and the device will be increased from 479 cd/m2 to 605 cd/m2 at the 8V applied voltage.
Finally, the QD organic light-emitting diode is discussed. QD is used as the light-emitting layer to fabricate the device, and the optimized TPBi/Alq3 thickness is used as the electron transfer structure. The device structure is Glass/ITO/PEDOT: PSS/Poly-TPD/ QD/TPBi/Alq3/LiF/Al. Compared with the light-emitting layer as the Alq3 green light-emitting device, the QD device is applied voltage at 8V. The luminance of QD and Alq3 are 562 cd/m2 and 218 cd/m2 respectively, and the efficiency is 2.97 cd/A and 1.95 cd/A. It can be found that the intensity of QD is higher than that of Alq3.

摘要.........i
Abstract.........ii
誌謝.........iv
目錄.........v
表目錄.........vii
圖目錄.........viii
第一章、緒論.........1
1.1有機發光二極體簡介.........1
1.2研究動機.........2
第二章、有機發光二極體原理及文獻探討.........3
2.1有機發光二極體原理.........3
有機發光二極體發光機制.........3
有機發光二極體各層結構介紹.........8
2.2有機發光二極體文獻探討.........10
第三章、實驗方法與步驟.........12
3.1實驗流程.........12
3.2陽極的製備.........13
電極圖案設計及雷射雕刻.........13
基板清洗.........15
基板表面處理.........15
3.3旋轉塗佈溶液式有機層.........17
溶液式有機材料塗佈流程.........17
元件有機材料之選用.........19
3.4熱蒸鍍有機層.........20
熱蒸鍍有機層操作流程.........20
熱蒸鍍有機層之材料選用.........22
3.5熱蒸鍍金屬陰極.........23
3.6簡易實驗步驟流程.........25
3.6.1定義元件pattern及清洗.........25
3.6.2旋轉塗佈溶液式有機層.........25
3.6.3熱蒸鍍有機層.........26
3.6.4熱蒸鍍金屬層.........27
3.7元件特性量測.........28
光電特性曲線量測.........28
第四章、結果與討論.........29
4.1 Glass/ITO藍色有機發光二極體之光電特性研究.........29
4.1.1電洞注入層摻雜之光電特性比較.........29
4.1.2調變電子傳輸層厚度之光電特性比較.........32
4.1.3改變發光層摻雜濃度之光電特性比較.........35
4.1.4 Glass/ITO藍光OLED之結構總比較.........38
4.2 PET/AgNW有機發光二極體之光電特性研究.........41
4.2.1調變電洞注入層厚度之光電特性比較.........41
4.2.2調變PEDOT:PSS溶液塗佈轉速對PET/AgNW元件之影響.........45
4.2.3調變電洞傳輸層厚度之光電特性比較.........47
4.2.4 PET/AgNW元件與Glass/ITO元件之光電特性比較.........50
4.2.5以業界PET/AgNW製作元件.........54
4.3 量子點(Quantum Dot)有機發光二極體之光電特性研究.........63
4.3.1電子傳遞結構選擇.........63
4.3.2量子點(Quantum Dot)發光元件與Alq3發光元件之比較.........65
第五章、結論.........67
參考文獻.........71
Extended Abstract.........74

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