臺灣博碩士論文加值系統

本研究以溶膠-凝膠法製備(La0.97Pr0.03)VO4作為螢光粉主體，第一部分以LaVO4作為螢光粉主體，固定Pr3+摻雜濃度3 mol%，添加不同濃度尿素離子，藉由尿素中的氮離子取代主體晶格中的氧離子改善其螢光粉體之發光特性。第二部分以LaVO4作為螢光粉主體，固定Pr3+摻雜濃度3 mol%，添加不同克數PEG 2000探討其添加濃度對顆粒表面型態與發光特性之影響。
第一部分，由XRD結果顯示，在煆燒950℃持溫6小時條件下，可得知結構為單斜晶系LaVO4之結晶結構。隨著尿素添加濃度的增加，並沒有觀察到二次相的產生。SEM分析方面，螢光粉體的表面型態多為不規則片狀團聚現象。在315 nm激發下，其放射光譜由Pr3+離子的3P0→3H4,5,6、1D2→3H4和3P0→3F2電子躍遷所構成。當尿素濃度為10 wt%時，位於480~510 nm範圍之Pr3+離子3P0→3H4電子躍遷強度最強。CIE色度座標隨著添加尿素濃度的增加皆位於近白光區。
而在第二部分，由XRD分析結果顯示，在煆燒950℃持溫6小時條件下，可得知結構為單斜晶系LaVO4之結晶結構。隨著PEG 2000添加克數的增加，並沒有觀察到二次相的產生。SEM分析方面，螢光粉體的表面型態隨著PEG 2000添加濃度的增加，顆粒從不規則形狀轉變為顆粒型態，且分布較為均勻，團聚現象有所改善，添加PEG 2000確實可以改變螢光粉體的表面顆粒型態。在315 nm激發下，其放射光譜由Pr3+離子的3P0→3H4,5,6、1D2→3H4和3P0→3F2電子躍遷所構成。當PEG 2000添加克數為10g時位於480~510 nm範圍之Pr3+離子3P0→3H4電子躍遷強度最強。CIE色度座標隨著添加PEG 2000克數的增加，由洋紅色偏移至近白光再偏移至近黃光位置，其中當PEG 2000添加克數為 3g時為近白光。

In this study, La(0.97)Pr(0.03)VO4 phosphor was prepared as the host material by sol-gel method. The first part was the host of phosphor with La(0.97)Pr(0.03)VO4. Different concentrations of Urea were added. The nitrogen ion in Urea replaces the oxygen ion in the host lattice to improve the luminescent properties of its phosphor powder. In the second part, La(0.97)Pr(0.03)VO4 was also used as the host of the phosphor, and different concentrations of PEG 2000 were added to investigate the influence of the doping concentration on the surface morphology and luminescent properties of the particles.
In the first part, XRD results show that the structure is monoclinic LaVO4 crystal structure under the condition of holding temperature of 950 °C for 6 hours. With the increase of the concentration of urea added, no secondary phase was observed. In the SEM analysis, the surface morphology of the phosphor powder is mostly irregular sheet agglomeration. Under 315 nm excitation, the emission spectrum consists of 3P0→3H4,5,6,1D2→3H4 and 3P0→3F2 electronic transitions of Pr3+ ions. When the urea concentration 10 wt.%, the Pr3+ ion 3P0→3H4 electron transition intensity in the range of 480~510 nm is the strongest. The CIE chromaticity coordinates are located near the white light region with the increase of the urea concentration.
In the second part, the results of XRD analysis showed that the structure was monoclinic LaVO4 crystal structure under the condition of holding temperature at 950°C for 6 hours. With the increase of PEG 2000 concentration, no secondary phase was observed. In the SEM analysis, the surface morphology of phosphor powder changed from irregular flakes to spherical particles with increasing concentration of PEG 2000. Under 315 nm excitation, the emission spectrum consists of 3P0→3H4,5,6,1D2→3H4 and 3P0→3F2 electronic transitions of Pr3+ ions. When the concentration of PEG 2000 10 g, the electronic transition of Pr3+ ion 3P0→3H4 in the range of 480~510 is the strongest. The CIE chromaticity coordinates shift from magenta to near white as the concentration of added PEG 2000 increases, and then shifts to the near-yellow position.

摘要.....i
Abstract.....iii
誌謝.....v
目錄.....vi
表目錄.....ix
圖目錄.....x
第一章 緒論.....1
1-1 前言.....1
1-2 LaVO4晶體介紹.....2
1-3 尿素.....2
1-4 聚乙二醇.....2
1-5 研究動機與目的.....3
第二章 理論基礎與文獻回顧.....6
2-1 發光的定義.....6
2-1-1 螢光與磷光之關係.....6
2-1-2 激發源的種類與應用.....6
2-1-3 螢光材料簡介.....7
2-2 螢光材料種類.....7
2-2-1 有機螢光材料.....7
2-2-2 無機發光材料.....8
2-2-3 半導體發光材料.....9
2-3 固態材料中的光致發光現象.....9
2-3-1 本質型發光 (Intrinsic Luminescence).....9
2-3-2 能帶發光 (band-to-band luminescence).....9
2-3-3 激子發光 (exciton luminescence).....10
2-3-4 交叉發光 (cross-luminescence).....10
2-3-5 外質型發光 (extrinsic luminescence).....10
2-3-6 侷限型 (localized type).....10
2-3-7 非侷限型 (unlocalized type).....11
2-4 發光機制簡介.....11
2-4-1 發光原理與發光過程.....11
2-4-2 組態座標 (configuration coordination).....12
2-4-3 史托克位移 (stokes shift).....12
2-4-4 能量轉移 (energy transfer).....13
2-4-5 電子-聲子交互作用 (electron-phonon interaction).....13
2-4-6 交叉緩解 (cross relaxation).....13
2-4-7 非輻射躍遷 (non-radiative transition).....13
2-5 影響發光性質的主要因素.....14
2-5-1 主體晶格效應 (host lattice effect).....14
2-5-2 熱淬滅效應 (thermal quenching).....14
2-5-3 毒劑效應 (poisoning effect).....14
2-5-4 濃度淬滅效應 (concentration quenching effect).....15
2-5-5 光游離效應 (photo ionization effect).....15
2-5-6 補償效應 (offset effect).....15
2-6 螢光體的組成與選擇.....15
2-7 螢光粉體之合成技術.....16
第三章 實驗方法與步驟.....32
3-1 實驗流程.....32
3-2 實驗材料.....32
3-3 成分與結構分析.....32
3-3-1 X光繞射 (X-ray diffraction analysis, XRD)分析.....32
3-3-2 場發射掃描式電子顯微鏡 (field emission scanning electron microscopy, FE-SEM)分析.....32
3-3-3 傅立葉轉換紅外線光譜分析 (Fourier Transform infrared spectroscopy,FT-IR) .....33
3-4 螢光粉體之光學特性分析.....33
3-4-1 吸收光譜 (absorption spectrum).....33
3-4-2 螢光光譜儀 (photoluminescence, PL)特性量測.....33
3-4-3 CIE色度座標分析 (analysis of C.I.E chromaticity diagram).....33
第四章 結果與討論.....38
4-1 以溶膠-凝膠法合成(La0.97Pr0.03)VO4添加尿素之螢光粉.....38
4-1-1 (La0.97Pr0.03)VO4添加尿素螢光粉之XRD結構分析.....38
4-1-2 (La0.97Pr0.03)VO4添加尿素螢光粉之紅外線光譜分析.....38
4-1-3 場發射掃描式電子顯微鏡(FE-SEM)表面形態分析.....38
4-1-4 (La0.97Pr0.03)VO4添加尿素螢光粉之吸收光譜分析.....39
4-1-5 (La0.97Pr0.03)VO4添加尿素螢光粉之激發光譜分析.....39
4-1-6 (La0.97Pr0.03)VO4添加尿素螢光粉之放射光譜分析.....39
4-1-7 CIE色度座標.....40
4-1-8 結論.....40
4-2以溶膠-凝膠法合成(La0.97Pr0.03)VO4添加PEG 2000之螢光粉.....50
4-2-1 (La0.97Pr0.03)VO4添加PEG 2000螢光粉之XRD結構分析.....50
4-2-2 FE-SEM表面形態分析.....50
4-2-3 (La0.97Pr0.03)VO4添加PEG 2000螢光粉之吸收光譜分析.....50
4-2-4 (La0.97Pr0.03)VO4添加PEG 2000螢光粉之激發光譜分析.....50
4-2-5 (La0.97Pr0.03)VO4添加PEG 2000螢光粉之放射光譜分析.....51
4-2-6 CIE色度座標.....51
4-2-7 結論.....51
第五章 總結論.....61
參考文獻.....62
Extended Abstract.....65

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