臺灣博碩士論文加值系統

本論文主要研究方向可分為二個部分，第一部分是以水熱法成長氧化鋅奈米柱並吸附金奈米粒子後進行材料特性分析，第二部分是以利用電化學測量法測定。首先，利用RF磁控濺射在玻璃基板上沉積100 nm厚的氧化鋅晶種層。氧化鋅奈米柱以水熱法製作，使用硝酸鋅(Zinc nitrate, Zn(NO₃)₂)、六亞甲基四胺(HMT)混合，並在90℃下生長6小時，使用金奈米粒子吸附於製備完成的氧化鋅奈米柱上，最後退火400℃完成氧化鋅奈米柱感測器。
將氧化鋅奈米柱感測器作為延伸式閘極場效電晶體(EGFET)的感測端，探討不同酸鹼值得變化，結果發現兩種氧化鋅奈米結構電流靈敏度由21.40 µA/pH，提升至45.66 µA/pH，線性分別是0.994和0.980。電壓靈敏度由24.67 mV/pH提升至76.75mV/pH，線性分別是0.986和0.990。主要是因為吸附金奈米粒子使材料導電率及載子移動速度提升，並增加奈米柱表面密度及表面活性位點，使費米能階不受釘扎效應影響，以提升氧化鋅奈米柱反應靈敏度。

The main research direction of this thesis can be divided into two parts. The first part is the growth of ZnO nanorods by hydrothermal method and the analysis of material properties after adsorption of Au nanoparticles. The second part is determined by electrochemical measurement. First, a 100 nm thick zinc oxide seed layer was deposited on a glass substrate by RF magnetron sputtering. The ZnO nanorods is prepared by hydrothermal method, mixed with zinc nitrate (Zinc nitrate, Zn(NO3)2) and hexamethylenetetramine (HMT), and grown at 90 ° C for 6 hours, using Au nanoparticles. Adsorption on the prepared ZnO nanorods, and finally annealing at 400 ° C to complete the ZnO nanorods sensor.
The ZnO nanorods column sensor was used as the sensing end of the extended gate field effect transistor (EGFET) to investigate the variation of different acid and alkali values. It was found that the current sensitivity of the two zinc oxide nanostructures was 21.40 μA/pH. Increased to 45.66 μA/pH with linearities of 0.994 and 0.980, respectively. The voltage sensitivity was increased from 24.67 mV/pH to 76.75 mV/pH with linearities of 0.986 and 0.990, respectively. Linearity is also quite good, because the adsorption of Au nanoparticles increases the conductivity and carrier movement speed, increases the surface density and surface active sites of the nano-pillar, improves the interface defects and dangling bonds, and makes the Fermi level It is not affected by the pinning effect and reduces the potential required for the reaction to improve the sensitivity of the reaction.

摘要...i
Abstract...ii
誌謝...iii
目錄...iv
表目錄...vi
圖目錄...vii
第一章 緒論...1
1.1前言...1
1.2研究動機...3
第二章 文獻回顧...4
2.1氧化鋅奈米材料簡介...4
2.2薄膜製程方法...6
2.3氧化鋅奈米結構之合成方式...7
2.3.1化學氣相沉積法(CVD)...7
2.3.2水溶液法 (Aqueous solution method)...8
2.3.3水熱法 (Hydrothermal method)...9
2.4 延伸式閘極場效電晶體之演進...11
2.5 酸鹼值理論...13
2.5.1 酸鹼值電化學測量原理...13
2.5.2 延伸式閘極場效應電晶體...15
2.5.3 表面吸附鍵結模型...16
2.5.4 電雙層(Electric Double layer)模型...18
2.5.5費米能階釘扎效應(Fermi Level Pinning)...21
第三章 實驗步驟與量測設備分析...23
3.1實驗室藥品與儀器...23
3.1.1實驗藥品...23
3.1.2使用儀器...23
3.2儀器介紹...24
3.2.1射頻磁控濺鍍系統 (RF magnetic sputtering system)...24
3.2.2場發射掃描式電子顯微鏡 (Field Emission Scanning Electron Microscopy, FE-SEM)...26
3.2.3 X射線繞射儀(X-ray diffraction, XRD)...27
3.3實驗步驟...29
3.3.1基板清洗...30
3.3.2氧化鋅晶種層製程...30
3.3.3吸附金奈米粒子及氧化鋅奈米柱生長...31
3.3.4氧化鋅奈米柱及吸附金奈米粒子氧化鋅奈米柱材料特徵分析...33
3.3.5氧化鋅奈米柱及吸附金奈米粒子氧化鋅奈米柱酸鹼值電性特性分析...33
第四章 結果與討論...34
4.1氧化鋅奈米柱材料特徵分析...34
4.1.1氧化鋅奈米柱場發射電子顯微鏡分析...34
4.1.2金屬觸媒吸附氧化鋅奈米柱場發射電子顯微鏡分析...36
4.1.3 金屬觸媒吸附於氧化鋅奈米柱之穿透式掃描式電子顯微鏡...37
4.1.4 X-ray繞射儀之氧化鋅奈米柱分析...40
4.1.5光致發光之氧化鋅奈米柱分析...42
4.2氧化鋅奈米柱酸鹼值感測器電性分析...43
4.2.1氧化鋅酸鹼值感測器測量...43
4.2.2氧化鋅奈米柱之延伸式閘極場效電晶體之元件特性...44
4.2.3金奈米粒子吸附於氧化鋅奈米柱之延伸式閘極場效電晶體之元件特性...47
4.2.4酸鹼值穩定性比較...50
4.2.5酸鹼值遲滯現象比較...52
第五章 結論...54
5.1結論...54
5.2未來展望...54
參考文獻...55
Exctended Abstract...60

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