本研究主要使用噴粉系統結合CO2雷射方式封裝摻鈰釔鋁石榴石(YAG:Ce)於藍寶石基板(sapphire)上，使用的螢光粉將會分別使用研究室自製前驅物粉末與商用螢光粉。與同樣使用玻璃作為封裝材料的PiG(phosphor in glass)相比，此製程可以大幅的節省時間成本，進行快速的量產高功率WLED。

　　為了確認本實驗的可行性，利用載玻片作為基板進行實驗，藉由不同塗佈方式的漿料厚度差異，比較其燒結深度與燒結層的界面情形，發現前驅物粉末燒結於140 µm的漿料塗抹厚度可達成片狀燒結層與sapphire黏結時脫落量低於10%，同時在基板之下放置散熱載體提升散熱能力，保護基板不會在燒結時破裂，且此結構的散熱能力比一般的PiG(phosphor in glass)與PiR(phosphor in resin)好，獲得此結果後接續把基板改為sapphire進行實驗。

　　由實驗發現一般的玻璃粉其熔點大約在500 ℃，使用雷射燒結時會產生嚴重的汽化，造成燒結後殘留的燒結層幾乎都消失，無法用於雷射燒結，為了避免此一現象尋找有高熔點材料，改為使用二氧化矽(SiO2)，SiO2的熔點高達1713 ℃，可以承受雷射的高溫燒結而不產生嚴重汽化，但是在光學性質方面因其折射率較低，與YAG跟sapphire相差太大，會有產生全反射的問題，將在之後光學能力性質鑑定後確認發光能力。

　　在進行噴粉實驗之前會先對漿料的厚度、粉末比例等進行探討，確認何種性質的漿料可以成功達成以下結果：完整的燒結層、未受破壞的基板以及良好的黏結能力，根據前述的實驗將會使用刮刀塗佈法作為主要的塗佈手法，使用各種不同比例粉末漿料測試何種比例可以達到上述要求。從結果可以看出SiO2若是太少會使燒結成為顆粒狀，並發現內部的螢光粉會重新熔融成液體再結晶成為YAG，且會因熱流影響其生長方向。

　　除了修改漿料比例外，通過添加PVA作為binder增加黏結性，與提升雷射能量密度及對應的燒結深度，當塗抹厚度達140 µm以上燒結層可以產生的同時且不破壞基板，但是單次燒結的燒結層厚度不夠，故嘗試4次重複燒結產生出170 µm的螢光燒結層。

　　最終目的將結合噴粉系統與雷射達到在噴塗的同時進行雷射燒結，快速的封裝WLED，期望能製作出玻璃基底的封裝層。因為玻璃的導熱能力比樹脂好，製作出的成品期望可以在高功率WLED下使用。

　　This study mainly use spray powder combine CO2 laser system package YAG:Ce on sapphire. Phosphor will use two kinds, made in lab and commercial. Compare to method that use same material glass as package material, this process can reduce lots of time. Produce high power WLED quickly.

　　To confirm this experiment's feasibility, will use glass as substrate to do test running.Use different way to coat different thickness of slurry. Compare sintering depth and boundary of sintering layer’s condition. Find out that if coating enough thickness of precursor, it can sintering a fine layer and cement well. Also can know that this structure has better heat dissipation then PiG and PiR. Due to this, we will change substrate to sapphire.

Experiment shows that the general glass powder has a melting point of about 500 °C. When laser sintering is used, serious vaporization will occur.The residual sintered layer will almost disappear after sintering, which cannot be used for laser sintering. In order to avoid this phenomenon, high melting point material is require, so we use SiO2 instead .SiO2 has a melting point up to 1713 °C, can withstand high temperature sintering of laser without serious vaporization, but its optical properties are lower due to its refractive index difference between YAG and sapphire. If the difference is too large, there will be a problem of total reflection, and the luminescence ability will be confirmed after the optical capability property is identified.

Final purpose is combining powder spray and laser accomplish sintering while powder spray, package WLED quickly. Ecpect to produce glass-base package layer. Because glass has better heat dissipation then resin, hope the product can use at high power WLED.

摘要...i
Abstract...iv
誌謝...vi
目錄...vii
表目錄...x
圖目錄...xi
第一章 緒論...1
1.1前言...1
1.2研究動機與目標...1
第二章 理論基礎與文獻回顧...2
2.1 螢光材料簡介...2
2.1.1螢光材料發光機制與應用...2
2.1.2 螢光材料組成...3
2.2影響發光特性之因素...4
2.2.1 主體結構效應...5
2.2.4 溫度效應...5
2.3 發光二極體簡介...5
2.3.1 白光發光二極體製作方式...6
2.3.2 發光二極體封裝方式...6
2.3.3 發光二極體發展現況與趨勢...8
2.3.4 提升發光二極體效率的方式...10
2.4 摻鈰釔鋁石榴石簡介...11
2.4.1 YAG:Ce3+結構介紹...11
2.4.2 稀土離子的發光特性...11
2.5 玻璃介紹...13
2.5.1 玻璃簡介...13
2.5.2 使用於螢光材料的玻璃...13
2.5.3 實驗使用之SiO2玻璃性質探討...14
2.6 雷射燒結...16
2.7 積層製造...17
2.8 儀器原理...20
2.8.1 掃描式電子顯微鏡(scanning electron microscopy, SEM)...20
2.8.2 穿透式電子顯微鏡(transmission electron microscopy, TEM)...21
2.8.3 X光繞射儀(x-ray diffractometer, XRD)...22
2.8.5 螢光光譜儀(fluorescence spectrophotometer, PL meter)...24
第三章 實驗方法與步驟...25
3.1 實驗藥品...25
3.2 量測與分析設備...25
3.2.1 CO2雷射雕刻機(carbon dioxide laser cutter)...25
3.2.2 X光繞射儀(x-ray diffractometer, XRD)...26
3.2.3 掃描式電子顯微鏡(scanning electron microscopy, SEM)...26
3.2.4 穿透式電子顯微鏡(transmission electron microscopy, TEM)...26
3.2.5 光學數位顯微鏡(opto-digital microscopy, OM)...26
3.2.6 雙束型聚焦離子束(dual-beam focus ion beam, DB-FIB)...27
3.2.7 熱分析儀(thermal analyzer)...27
3.2.8 單軸加壓氣壓機...27
3.2.9 熱風循環烘箱(forced convection oven)...27
3.2.10 球磨機(ball milling machine)...27
3.2.11 研磨拋光機(grinding and polishing machine)...27
3.2.12 慢速切割機(low speed cutter)...28
3.2.13 加熱電磁攪拌機...8
3.2.14 光致發光光譜儀(photoluminescence, PL)...28
3.2.15 發光性質之熱穩定性量測系統...28
3.2.16 注射幫浦(Syringe Pump)...28
3.2.17 噴筆...28
3.2.18 刮刀(coater blade)...29
3.3 實驗流程...29
3.3.1 刮刀塗抹粉末雷射燒結...29
3.3.2 噴筆噴塗粉末雷射燒結...35
第四章 實驗結果與討論...36
4.1螢光粉前驅物雷射燒結於玻璃及藍寶石基板...36
4.1.1 旋轉塗佈前驅物粉末於載玻片進行雷射燒結...36
4.1.2以刮刀塗佈前驅物粉末於載玻片進行雷射燒結...43
4.1.3 以刮刀塗佈前驅物粉末於sapphire進行雷射燒結...47
4.2 玻璃粉、玻璃螢光粉與SiO2粉及基板之分析...49
4.2.1 以刮刀塗佈玻璃粉末於sapphire進行雷射燒結...49
4.2.2 以刮刀塗佈PiG粉末於sapphire進行雷射燒結...51
4.2.3 以刮刀塗佈SiO2粉末於sapphire進行雷射燒結...53
4.3 商用螢光粉雷射燒結於玻璃及藍寶石基板...57
4.3.1 以刮刀塗佈SiO2+商用螢光粉粉末於sapphire進行雷射燒結...57
4.3.2 噴筆系統規劃與架設...65
4.3.3 噴塗SiO2+商用螢光粉粉末於sapphire進行雷射燒結...66
第五章 結論...67
參考文獻...69
附錄...73
Extended Abstract...74

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