臺灣博碩士論文加值系統

本論文中主要分成兩個部分介紹，第一個部份是以(1-x)TiO2-xSrTiO3 (x=0~0.1)製作介質共振器(DR)塊體樣品用於量測，探討在不同摻雜比例下(1-x)TiO2-xSrTiO3之微波介電特性，第二個部份是探討(1-x)TiO2-xCaTiO3(x=0.025)薄膜在不同氣體比例之濺鍍條件下的薄膜之微波介電特性。
塊體樣品(DR)之製作是以固態反應法，以二氧化鈦(TiO2)為主體材料摻雜不同比例的鈦酸鍶(xSrTiO3：x=0~0.1)，在固定的煆燒溫度1200℃下，以兩個不同的燒結溫度1300℃及1350℃下製作兩組樣品。經由網路分析儀以柱狀共振技術以及阿基米德量測法量測介質共振器之微波介電特性和物理性質。量測後發現隨著燒結溫度、摻雜濃度和塊體樣品之密度越高時，微波介電特性有越佳的表現。透過X光繞射儀量測，其繞射峰強度也隨著鈦酸鍶(SrTiO3)的摻雜量增加而逐漸增加。
薄膜樣品之製作則是以反應性射頻磁控濺鍍(PVD)製備(1-x)TiO2-CaTiO3 (x=0.025)薄膜，在固定的摻雜比例、濺鍍功率、壓力、時間、基板加熱溫度(300℃)下，改變氬氣(Ar)和氧(O2)之比例，透過網路分析儀以共振腔擾動技術量測在不同氣體比例下的薄膜介電特性。

The paper is divided into two parts. The first part deals with the material of (1-x)TiO2-xSrTiO3 with the sample shape of dielectric resonator to explore the microwave dielectric properties at different doping ratios(x=0~0.1). The second part studies the material of 0.975TiO2-0.025CaTiO3 thin films, To conduct microwave dielectric analysis of TiO2-CaTiO3 thin material under the sputtering conditions with different gas ratios.
The DR samples are made by solid state reaction method. TiO2 is adopted as the major material doped with different proportions of SrTiO3 with x=0~0.1. At a fixed firing temperature of 1200°C, two sets of samples are made under two different sintering temperatures of 1300°C and 1350°C. The microwave dielectric properties and physical properties of the DR samples are measured by network analyzer and the Archimedes measurement respectively. The results have showed that as the sintering temperature increased the doping concentration and samples density are increased there is a better performance of microwave dielectric characteristics. Through the X-ray analysis the diffraction peak intensity also increases with the increasing of SrTiO3 doping amount .
The thin films formulation of (1-x)TiO2-xCaTiO3(x=0.025) adopted the reactive radio magnetic controlled sputtering method with a fixed doped ratio and sputtering method ,Under the growth conditions of various gas ratios of Ar and O2, thin films samples are measured by the resonant cavity perturbation technique using a network analyzer to explore the dielectric properties of the films under different doping environments.

摘要.....i
Abstract.....ii
誌謝.....iv
目錄.....v
表目錄.....ix
圖目錄.....x
第一章 緒論.....1
1-1前言.....1
1-2研究動機與目的.....1
1-3論文架構.....2
第二章 基礎理論.....3
2-1 介電理論.....3
2-1-1 介電原理.....3
2-1-2 介電損失.....7
2-2 品質因數.....7
2-3 介質共振器.....11
2-4 介電共振模態及理論.....12
2-5 微波測量技術.....18
2-5-1 柱狀共振技術.....18
2-5-2 共振腔擾動技術.....20
2-6 DR樣品製作.....23
2-6-1 固態反應法機構.....23
2-6-2 固態反應法之優缺點.....24
2-7 燒結理論.....24
2-7-1 燒結現象的驅動力.....24
2-7-2 燒結機構.....25
2-8 薄膜製作.....26
2-8-1 濺鍍介紹.....26
2-8-2 磁控濺鍍原理.....27
2-8-3 薄膜成長機制.....28
第三章 實驗方法.....30
3-1 陶瓷粉末介紹.....30
3-1-1 二氧化鈦.....30
3-1-2 鈦酸鍶.....34
3-1-3 鈦酸鈣.....36
3-2 (1-x)TiO2-xSrTiO3塊體樣品製作.....37
3-2-1 塊體樣品實驗方法.....37
3-2-2 起始材料.....37
3-2-3塊體樣品製造流程.....37
3-2-4 塊體樣品介電量測分析.....39
3-3 (1-x)TiO2-xCaTiO3 (x=0.025)薄膜製作.....41
3-3-1 薄膜實驗方法.....41
3-3-2 粉靶製作.....41
3-3-3 基板清洗.....41
3-3-4 薄膜沉積.....42
3-3-5 定義共振頻率.....44
3-3-6 樣品校正.....46
3-3-7 薄膜介電測量分析.....46
3-3-8 薄膜熱退火.....46
3-4 結構分析與特性量測.....47
3-4-1塊體樣品密度與孔隙率量測.....47
3-4-2 X光繞射分析.....48
3-4-2 場發射掃描式電子顯微鏡.....50
3-4-3 網路分析儀.....50
第四章 結果與討論.....51
4-1 不同燒結溫度對(1-x)TiO2-xSrTiO3塊體樣品之影響.....51
4-1-1 XRD分析.....51
4-1-2 密度、孔隙率分析.....53
4-1-3 介電特性分析.....57
4-1-4 小結.....57
4-2 不同氣體比例對(1-x)TiO2-xCaTiO3(x=0.025)薄膜之影響.....59
4-2-1 XRD分析.....59
4-2-2 SEM分析.....59
4-2-3 薄膜介電特性分析.....65
4-2-3 小結.....66
第五章 結論與未來研究.....84
5-1 結論.....84
5-1-1 (1-x)TiO2-xSrTiO3(x＝0~0.1)塊體樣品結論.....84
5-1-2 (1-x)TiO2-xCaTiO3(x＝0.025)薄膜樣品結論.....84
5-2 未來研究.....85
5-2-1 塊體樣品未來研究方向.....85
5-2-2 薄膜樣品未來研究方向......85
參考文獻.....86
Extended Abstract.....88

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