本研究利用標準黃光微影製程，在聚乙烯對苯二甲酸酯(PET)以及矽基板上分別製作具有底切(Under-cut)圖案化光阻，以模擬在基板表面的圖案化光電元件結構及製程中汙染物吸附的形貌，並以四甲基矽烷(Tetramethylsilane; TMS)單體、四甲基矽烷-氧氣以及四甲矽烷-氧(Oxygen; O2) -氨氣(Ammonia; NH3)等混合氣體為源氣體，利用電漿增強化學氣相沉積系統（Plasma-enhanced chemical vapor deposition; PECVD），於低溫環境下、在圖案化光阻表面分別沉積有機矽基(Organosilicon; SiOxCy:H)、氧化矽(Silicon oxide; SiOx)、氮氧化矽(Silicon oxynitride; SiOxNy)薄膜以及連續沉積多對的有機矽基/氮氧化矽、有機矽基/氧化矽氣體阻障層結構觀察其階梯覆蓋性與水氣滲透率變化。
研究結果顯示先將有機矽基覆蓋層薄膜上沉積氮氧化矽薄膜，相較於單層氮氧化矽薄膜，加入有機矽基覆蓋層能改善在PET基板上水氣滲透率劣化程度，也有較低的內應力，且更優異之薄膜附著度以及較佳的抗撓曲機械特性。接著製備連續沉積多對的有機矽基/氮氧化矽氣體阻障層，相較於單層氮氧化矽薄膜，發現隨著對數的上升，有效於降低整體的水氣滲透率，且提升其機械撓曲特性，並藉由多對的有機矽基/氧化矽氣體阻障層結構觀察其圖案化光阻表面的覆蓋性及水氣滲透率。最後則利用製程溫度之改變，製備單層氧化矽薄膜，並探討其水氣滲透率及階梯覆蓋性，發現隨著製程溫度之上升，能有效助於降低其水氣滲透率且有較佳的底角覆蓋情形。

This study used the standard photolithography process to achieve phoresist with undercut patterns on the polyethylene terephthalate (PET) and silicon substrates to simulate the substrates with patterned optoelectronic device and adsorbed particle. The evolutions on the step coverage of the single organosilicon (SiOxCy:H), silicon oxide(SiOx), silicon oxynitride (SiOxNy), stacked organosilicon/silicon oxynitride and stacked organosilicon/silicon oxide film as well as the resulting water vapor transmission rate (WVTR) deposited onto the patterned substrates by plasma-enhanced chemical vapor deposition (PECVD) at a low temperature using the tetramethylsilane (TMS) ,TMS-oxygen-(O2), and TMS-O2-ammonia (NH3) gas mixture, respectively were investigated.The results showed that the degradationon the barrier property to water vapor permeation of the silicon oxynitride film which deposited onto the organosilicon was rather unapparent than that of the singlesilicon oxynitride film directly deposited onto the PET substrate with the undercut patterned photoresist.Additionally,the adhesion of the silicon oxynitride film deposited onto the organosilicon barrier structure under the tensile strain bending was better than the silicon oxynitride film directily as a consequence of its low residual internal compressive stress.After that, the continuous deposition of multilayer organic silicon based silicon oxynitride barrier layer ,compared with single silicon oxynitride film that the water vapor permeability were reduced and the mechanical deflection characteristics will be improved. Followed, observing step coverage and water vapor permeability of optimization patterned photoresist surface by multilayer organic silicon based silicon oxide barrier layer.Finally, single layer silicon oxide film was prepared by the change of process temperature, and we discussed step coverage and water vapor permeability of optimization patterned photoresist surface that found the water vapor permeability were reduced and the step coverage were improved when the temperature rised.

摘要...... i
Abstract...... ii
誌謝...... iv
目錄...... v
表目錄...... vii
圖目錄...... viii
第一章緒論...... 1
1.1 前言...... 1
1.2 文獻回顧...... 2
1.2.1 氣體阻障層...... 2
1.2.2 階梯覆蓋性...... 2
1.2.3 撓曲測試...... 3
1.3 研究動機...... 4
第二章理論基礎...... 8
2.1 化學氣相沉積...... 8
2.1.1 電漿理論...... 8
2.1.2 化學氣相沉積之過程...... 9
2.1.3 化學氣相沉積之種類...... 9
2.1.4 化學氣相沉積之階梯覆蓋...... 10
2.2 薄膜成長原理...... 10
2.3 軟性基板簡介...... 11
2.4 水氣滲透原理及機制...... 11
2.5 薄膜應力原理及機制...... 13
第三章實驗方法及步驟...... 22
3.1 實驗流程...... 22
3.2 薄膜製程系統...... 22
3.2.1 真空抽氣系統...... 22
3.2.2 腔體反應室系統...... 22
3.2.3 反應氣體源...... 23
3.3 薄膜量測分析...... 23
3.3.1 金相顯微鏡...... 23
3.3.2 α-step 表面輪廓儀...... 23
3.3.3 附著度測試...... 23
3.3.4 水蒸氣滲過率測試儀...... 23
3.3.5 場發射掃描式電子顯微鏡（FE-SEM）...... 24
3.4薄膜撓曲測試...... 24
3.4.1 自製撓曲機...... 24
3.5頂切以及底切光阻圖案化製作...... 24
3.5.1 光阻圖案化...... 24
3.5.2 底切圖案化之階梯覆蓋率...... 25
3.5.3 有效滲透衰退率(Effective permeability degradation)：...... 25
3.5.4 抵達角差異定義：...... 25
第四章結果與討論...... 34
4.1氣體阻障層加入有機矽基覆蓋層分析...... 34
4.1.1 單層氮氧化矽氣體阻障層加入有機矽基覆蓋層附著度及應力分析...... 35
4.1.2 單層氮氧化矽氣體阻障層加入有機矽基覆蓋層撓曲及水氣滲透率分析...... 36
4.2 氣體阻障層製備於底角圖案化表面水氣滲透率分析...... 37
4.2.1 多層有機矽基/氮氧化矽氣體阻障層撓曲特性及水氣滲透率分析...... 37
4.2.2 多層有機矽基/氧化矽氣體阻障層製備於底角圖案化表面水氣滲透率分析...... 38
4.3 以不同製程溫度製備氧化矽薄膜於底角圖案化表面水氣滲透率分析...... 42
4.3.1 不同製程溫度之氧化矽薄膜撓曲特性及水氣滲透率分析...... 42
4.3.2 不同製程溫度之氧化矽薄膜製備於底角圖案化表面水氣滲透率分析...... 43
第五章結論...... 77
參考文獻 79......
Extended Abstract...... 86

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