臺灣博碩士論文加值系統

本實驗是研究銅鋅錫硒硫Cu2ZnSn(SSe)4薄膜在太陽能電池吸收層材料之特性。其製程是利用鋅與硒ZnSe、錫與硒SnSe以1:1的比率配置在1050℃的溫度下於石英管中熔煉成二元化合物，然後添加1:1的硫化銅CuS與微量的矽粉末(Si)，利用濕式球磨法來製備混合物之漿料以形成貧銅(Cupper poor)、計量比(Stoichiometric)、富銅(Cupper rich)之五元化合物(分別為Cu/Zn+Sn原子百分比=0.6、0.8、1.0、1.2)，並利用旋轉塗佈法將漿料塗佈於玻璃基板上以形成前驅層薄膜。接著將樣品置於爐管內進行快速退火製程(RTA)，溫度分別為300℃、400℃及500℃，退火持溫時間為10分鐘。
本實驗所添加之Si含量莫耳分率為0.11，而本實驗室先前的研究數據是Si含量莫耳分率為0.19，根據這兩項數據可以得知，當Si含量莫耳分率分別為0.11與0.19，熱處理溫度在300℃時，皆產生鋅黃錫礦結構(Kesterite)之特徵峰(112)，而兩者的差異在於，當Si含量莫耳分率較小時，對於黃錫礦結構(Kesterite)的形成較為理想。由此可得知，當Si含量莫耳分率為0.11且經熱處理溫度300℃為最佳Cu2ZnSn(SSe)4薄膜。

The experiment is investigate on the application of characteristic Cu2ZnSn(SSe)4 for solar cell absorber layer materials. First of all, zinc, selenium and tin, selenium the configuration used in a proportion of one to one and add a small amount of potassium iodide. Were melted in quartz tubes at 1050 oC to form binary compound, then add 1: 1 copper sulfide and a trace amount of silicon powder (Si). Inks of the pentanary compound were made using wet-type ball milling four ingots from Cu-poor, stoichiometric to Cu-rich mixtures (Cu/Zn+Sn atomic ratio = 0.6, 0.8, 1.0 and 1.2, respectively), and printed onto a glass substrate to form a precursor film by spin coating. Then, the samples were heated with rapid thermal annealing (RTA) in a furnaceat 300 oC, 400 oC, 500 oC, respectively, for 10 minutes.
In this experiment is the film with mole fraction of 0.11 Si ,and the previous experimental result is the film with mole fraction of 0.19 Si .According to these two data ,the film with mole fraction of 0.11 Si and 0.19 Si all have a characteristic peak (112) of Kesterite at heat treatment temperature of 300°C ,and the difference between the two data is that when the film with mole fraction is small , the formation of Kesterite is more ideal. By comparison ,the mole fraction of 0.11 Si and the heat treatment temperature of 300 °C is the best Cu2ZnSn(SSe)4 thin film.

摘要...i
ABSTRACT...ii
誌謝...iii
目錄...iv
表目錄...viii
圖目錄...ix
第一章 簡介...1
1.1前言...1
1.2研究動機...1
第二章 文獻探討...3
2.1薄膜太陽能電池的種類...3
2.1.1 非晶矽（Amorphous Silicon；a-Si:H）薄膜太陽能電池...4
2.1.2非晶矽（a-Si）/ 微晶矽（μc-Si）堆疊薄膜太陽能電池...4
2.1.3碲化鎘（CdTe）薄膜太陽能電池...4
2.1.4染料敏化薄膜太陽能電池...5
2.1.5銅銦硒（CISe）薄膜太陽能電池...6
2.1.6銅銦鎵硒（CIGSe）薄膜太陽能電池...7
2.1.7銅鋅錫硫(CZTS) 和銅鋅錫硒(CZTSe)太陽能電池...8
2.2太陽能電池工作原理...8
2.3 Ⅰ-Ⅲ-Ⅵ2與I2-II-IV-VI4薄膜太陽能電池結構...11
2.4銅鋅錫硫(CZTS)吸收層製程技術...15
2.5銅鋅錫硫(CZTS)吸收層之發展...17
2.6 球磨粉碎...18
2.6.1球磨粉碎原理...18
2.6.2影響球磨粉碎效果的因素...19
2.7 快速退火RTP之熱輻射原理...20
第三章 實驗流程...34
3.1 實驗材料...34
3.1.1製備Cu2ZnSn(SeS)4漿料之化合物...34
3.2實驗流程...34
3.2.1基板前處理...34
3.2.2漿料製備...35
3.2.3 軟烤處理...35
3.2.4 快速退火處理...35
3.3製程設備...36
3.3.1次微米粉末製造設備...36
3.3.2 旋轉塗佈機...36
3.3.3 快速退火系統...37
3.4實驗分析設備...38
3.4.1繞射儀（X-Ray Diffraction,XRD）...38
3.4.2 掃瞄式電子顯微鏡（Scanning Electron Microscope,SEM）...39
3.4.3 能量散佈光譜儀（Energy Dispersive Spectrometer,EDS）...39
3.4.4 UV-Vis（紫外光-可見光）光譜儀...40
3.4.5 感應耦合電漿質譜儀...40
第四章 實驗結果與討論...49
4.1顯微結構分析...49
4.2銅鋅錫硫硒薄膜成分分析...50
4.3 結晶特性分析...52
4.3.1銅含量對薄膜組成之影響...52
4.3.2熱處理溫度對Cu2ZnSn(SSe)4薄膜結晶特性之影響...53
4.3.3 銅與矽對銅鋅錫硫硒薄膜特徵峰與退火溫度之影響...54
4.4紫外光-可見光光譜分析...55
第五章 結論...71
參考文獻...73
英文論文大綱...78

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