在能量轉換系統中，降低輸出能量損失為提高產量之方針，因此
必須將能量效率最大化。熵在化學反應、熱力學、生物學和材料科學
中為常見參數，因能量損失與熵有著直接相關。然而，不可逆過程中
熵之產生難以即時監控。熵可作為描述化學，電氣或機械系統之故障
和老化評估參數。焦電型熵感測器量測待測物熵率可以由熵感測器的
焦電電流、溫度、熱容量、熱電係數和電極面積得出。本研究中，開
發了焦電型熵傳感器來評估熵和其時間變化，利用 MEMS 微製程技
術透過精密切割機和噴砂蝕刻機製作數種厚度和尺寸之塊狀 PZT 元
件。並將熵傳感器實際應用於量測電容以估計衰弱。結果顯示，較大
體積之 PZT 元件會增加熵生成量。熵變化增量與 PZT 元件之體積成
正比關係。在相同的 PZT 厚度 100μm 下，邊長 10mm 之熵感測器產
生的熵變化約為 2mm 邊長的 25 倍。小體積的 PZT 較不會熱干擾待
測物之熵產生，但是較小的電極面積會使焦電電流之訊號微弱，增加
了測量的難度。此外，焦電型熵感測器也成功地評估電容關鍵衰弱時
間，實驗使用 47μF/4V 之電容，輸入電壓為 40V、35V 與 30V 時，損
傷臨界點約落在 7.5 秒、11.25 秒與 22.5 秒。

In energy transformation systems, output energy is the most goal for
increasing yield, consequently energy efficiency must be maximized.
Entropy is a common parameter in chemical reactions, thermodynamic,
biology and materials science, because energy loss is directly related to
entropy generation. However, entropy generation in irreversible processes
is difficult to be monitored in real time. Entropy can be an estimator for
describing the failure and ageing of chemical, electrical or mechanical
systems. The entropy rate can be derived from the induced pyroelectric
current, temperature, thermal capacity, pyroelectric coefficient and
electrode area. In the present study, a pyroelectric type entropy sensor is
developed to evaluate entropy variation and rate while bulk PZT materials
are fabricated with various thicknesses and dimensions by MEMS micromanufacture
processes with a dicing saw and a sandblast etching machine.
The entropy sensors are further applied to monitor capacitors for predicting
they lifetime. The results show that increasing the PZT dimension raises
the entropy variation. The increment of entropy variation is proportional to
the volume of PZT cells. A PZT square with a 10 mm side length generates
the entropy variation about 25 times than that of a 2 mm side length under
the same PZT thickness of 100 μm. A PZT cell with a smaller volume
cannot disturb the entropy generation of the measured objects, but the
smaller electrode area can reduce the induced current and electrical signals
increasing the difficulty in measurement. Moreover, the pyroelectric type
entropy sensors are also successful to appraise the critical failure time in
capacitors. The critical time is about 7.5s, 11.2.5s, 22.5s for the input
voltage of 40V, 35V, 30V respectively while the commercial capacitor
possesses the capacitance of 47μF and the maximum educed voltage of 4V.

摘要...............................................i
英文摘要(Abstract)...........................ii
誌謝..............................................iii
目錄..............................................iv
表目錄...........................................vi
圖目錄...........................................vii
符號說明.........................................ix
第一章 緒論....................................1
1.1研究背景與動機.........................1
1.2 焦電原理與文獻........................3
1.3研究目的....................................19
第二章 理論介紹.............................20
2.1焦電效應....................................20
2.2焦電響應....................................22
2.3焦電響應與熵之評估分析..........26
2.4熱傳遞........................................30
2.5鋯鈦酸鉛(PZT)元件加工原理......34
第三章 實驗方法................................39
3.1 焦電元件加工...............................40
3.2架構與量測方法..............................47
3.2.1 焦電型熵感測器特性.....................47
3.2.2 焦電型熵感測器應用.....................49
第四章 結果與討論..................................54
4.1 焦電型熵感測器之幾何特性..............54
4.2 焦電型熵感測器應用於電容壽命評估.......64
第五章 結論.........................................70
5.1 總結...........................................70
5.2 未來展望.......................................71
參考文獻............................................73
Extended Abstract.................................78

[1]Jona, F., Shirane, G., 1993, “Ferroelectric Crystals”, Dover
Publications, Inc., pp. 11-14.
[2]吳朗，1944，“電子陶瓷壓電”，全欣資訊圖書
[3]Jaffe, B., Cook, W. R., Jaffe, H., 1971, “Chapet 7-Solid Solutions Of
Pb(Ti, Zr, Sn, Hf)O3”, Academic Press, pp. 135-183.
[4]先寧電子科技股份有限公司(2007)，PZT粉料，民國102年4月23日，取自：
http://www.sunnytec.com.tw/products/p1.asp
[5]Zheludev, I. S., 1971, “Ferroelectricity and Symmetry”, Solid State
Physics, 26, pp. 429-464.
[6]Xu, Y., 1991, “Ferroelectric Materials and Their Applications”, North-
Holland, New York .
[7]Schaffer, J. P., Saxena, A., Antolovich, S. D., Sanders, T. H., Warner, S.
B., 1995, “The science and design of engineering materials”, Richard D.
Irwin, Inc., pp. 497-503.
[8]Ho, J. J., Fang, Y. K., Lee, W. J., Chen, F. Y., Hsieh, W. T., Ting, S. F.,
Lee, K. H., Hsieh, M. C., Chang, C. P., and Wu, K. H., 1999, “Analysis of
Substrate Effects on the Response of Pyroelectric Thin-film Infrared
Sensors”, Microscale Thermophysical Engineering, 3, 4, pp. 263-272.
[9]Ye, C. P., Tamagawa, T., and Polla, D. L., 1991, “Experimental Studies on
Primary and Secondary Pyroelectric effects in Pb(ZrxTi1-x)O3, PbTiO3, and
ZnO thin Film”, Journal of Applied Physics, 70, 10, pp. 5538-5543.
[10]汪建民，民國八十三年，“陶瓷技術手冊”，中華民國粉末冶金協會，第527~549頁。
[11]Chang, C. C., Tang, C. S., 1998, “An integrated pyroelectric infrared
sensor with a PZT thin film”, Sensors and Actuators A: Physical, 65, pp.
171-174.
[12]Fujii, S., Kamada, T., Hayashi, S., Tomita, Y., Takayama, R., Hirao, T.,
Nakayama, T., and Deguchi, T., 1995, “Pyroelectric linear array infrared
sensors made of La-modified PbTiO3 thin films and their applications”,
SPIE, 2552, pp. 612-621.
[13]Takayama, R., Tomita, Y., Iijima, K., and Ueda, I., 1991, “Pyroelectric
properties and application to infrared sensors of PbTiO3, PbLaTiO3, and
PbZrTiO3 ferroelectric thin films”, Ferroelectrics, 118, pp. 325-342.
[14]Setiadi, D., Regtien, P. P. L., 1995, “A VDF/TrFE copolymer on silicon
pyroelectric sensor: design considerations and experiments”, Sensors and
Actuators A: Physical, 47, 1-3, pp. 408-412
[15]Lienhard, D., Heepmann, F., and Ploss, B., 1995, “Thin nickel films as
absorbers in pyroelectric sensor arrays”, Microelectronic Engineering, 29,
pp. 101-104.
[16]Ho, J. J., Fang, Y. K., Lee, W. J., Chen, F. Y., Hsieh, W. T., Ting, S.
F., Lee, K. H., Hsieh, M. C., Chang, C. P., and Wu, K. H., 1999, “Analysis
of Substrate Effects on the Response of Pyroelectric Thin-film Infrared
Sensors”, Microscale Thermophysical Engineering, 3, 4, pp. 263-272.
[17]Chong, N., Chan, H. L. W., and Choy, C. L., 2002, “Pyroelectric Sensor
Array for In-line Monitoring of Infrared Laser”, Sensors and Actuators A:
Physical, 96, pp. 231-238.
[18]Pham, L., Tjhen, C., Ye, W., and Polla, D. L., 1994, “Surfacemicr-
omachined Pyroelectric Infrared Imaging Array with Vertically Integrated
Signal Processzng Circuitry”, IEEE Transactions on Ultrasonics,
Ferroelectrics and Frequency Control, 41, 4, pp. 552-555.
[19]Li, B., 2004, “Design and simulation of an uncooled double-cantilever
microbolometer with the potential for ~mK NETD”, Sensors and Actuators A:
Physical, 112, 2-3, pp. 351-359
[20]Muralt, P., 2001, “Micromachined infrared detectors based on pyroelectric
thin films”, Reports on Progress in Physics, 64, 10, pp. 1339-1388.
[21]Ho, JJ., Fang, Y. K., Lee, W. J., Chen, F. Y., Hsieh, W. T., Ting, S. F.,
Ju, M. S., Huang, S. B., K. H., Wu, and Chen, C. Y., 1999, “The Dynamic
Response Analysis of a Pyroelectric Thin-Film Infrared Sensor with Thermal
Isolation Improvement Structure”, IEEE Transactions on Electron devices,
46, 12, pp. 2289-2294.
[22]Hsiao, C. C., Liu, S. Y., 2014, “Multi-frequency band pyroelectric
sensors,” SENSORS, 14, 22180-22198.
[23]張君偉，2007，“雙階段濺鍍技術於氧化鋅焦電感測器響應之影響”，台灣科技大學機械工程
系研究所，碩士論文。
[24]曾增春，1983，溫度量測學，科技圖書股份有限公司。
[25]Sze, S. M., 1994, semiconductor sensor, John Wiley & Sons, Inc.
[26]劉俊廷，1998，“砷化銦金屬絕緣體半導體電容與紅外線光偵檢器之研究”，國立台灣大學電
機工程研究所，碩士論文。
[27]巫瑞琪，1996，“輻射溫度計”，國立中央大學光電科學研究所，碩士論文。
[28]Wei, C. S., Lin, Y. Y., Hu, Y. C., Wu, C. W., Shih, C. K., Huang, C. T.,
and Chang, S. H., 2006, “Partial-electroded ZnO pyroelectric sensors for
responsivity improvement”, Sensors and Actuators A: Physical, 128, 1, pp.
18-24.
[29]Hsiao, C. C., Hu, Y. C., Chang, R. C., 2010, “Some design considerations
on the electrode layout of ZnO pyroelectric sensors”, Sensors and
Materials, 22, 8, pp. 417-425.
[30]Norkus, V., Schulze, A., Querner Y. and Gerlach G., 2010, “Thermal Effects
to Enhance the Responsivity of Pyroelectric Infrared Detectors”, Procedia
Engineering, 5, 1, pp. 944-947.
[31]Hsiao, C. C., Yu, S. Y., 2012, “Improved response of ZnO films for
pyroelectric devices”, SENSORS, 12, pp. 17007-17022.
[32]Siao, A. S., Chao, C. K., Hsiao, C. C., 2016, “A Strip Cell in
Pyroelectric Devices”, SENSORS, 16, 375.
[33]Siao, A. S., Chao, C. K., Hsiao, C. C., 2015, “Study on Pyroelectric
Harvesters with Various Geometry”, SENSORS, 15, pp. 19633-19648.
[34]Cuadras , A., Ovejas, V. J., “Determination of a System’s Entropy Using
Pyroelectric Sensors”, IEEE SENSORS JOURNAL, 15, 12, pp.6890-6897.
[35]Cuadras , A., Romero, R., Ovejas, V. J., “Entropy characterisation of
overstressed capacitors for lifetime prediction”, Journal of Power
Sources, 16, 336, pp.272-278.
[36]Ye, C. P., Tamagawa, T., and Polla, D. L., 1991, “Experimental Studies on
Primary and Secondary Pyroelectric effects in Pb(ZrxTi1-x)O3, PbTiO3, and
ZnO thin Film”, Journal of Applied Physics, 70, 10, pp. 5538-5543.
[37]Whatmore, R. W., 1986, “Pyroelectric devices and materials”, Reports on
Progress in Physics, 49, 12, pp. 1335-1386.
[38]Razeghi, M., 1998, “Current status and future trends of infrared
detectors”, Opto-Electronics Review, 6, 3, pp. 155-194.
[39]霍爾曼(Holman J. P.)著，1977，“熱傳遞學”，洪政豪譯，滄海出版社，台中。
[40]EVERPRECISION TECH CO., LTD., 2003.03, DS-1500II 切割機, http://www.go-
gddq.com/down/2012-05/12052707119760.pdf
[41]Lienhard, D., Heepmann, F., and Ploss, B., 1995, “Thin nickel films as
absorbers in pyroelectric sensor arrays”, Microelectronic Engineering, 29,
pp. 101-104.
[42]Setiadi, D., Regtien, P. P. L., 1995, “A VDF/TrFE copolymer on silicon
pyroelectric sensor: design considerations and experiments”, Sensors and
Actuators A: Physical, 47, 1-3, pp. 408-412.
[43]Ho, J. J., Fang, Y. K., Lee, W. J., Chen, F. Y., Hsieh, W. T., Ting, S.
F., Lee, K. H., Hsieh, M. C., Chang, C. P., and Wu, K. H., 1999, “Analysis
of Substrate Effects on the Response of Pyroelectric Thin-film Infrared
Sensors”, Microscale Thermophysical Engineering, 3, 4, pp. 263-272.
[44]Chong, N., Chan, H. L. W., and Choy, C. L., 2002, “Pyroelectric Sensor
Array for In-line Monitoring of Infrared Laser”, Sensors and Actuators A:
Physical, 96, pp. 231-238.
[45]詠業科技股份有限公司(1988)，壓電技術介紹，民國106年6月2日，取自：
https://www.unictron.com/