本實驗是利用非真空製程成長Si參雜之Cu(InGa)Se2的光伏元件吸收層。首先依照不同比例調配銅硒、銦硒、鎵硒三種化合物粉末並添加純矽，接著利用球磨法製備成CIGS漿料後，以旋轉塗佈法將漿料塗佈於基板上而形成前驅層薄膜，置於加熱半板上進行軟烘烤後，再將先驅層放置紅外線快速升溫爐(RTA)中分別進行300 ℃、400 ℃與500 ℃快速退火製程，持溫10 min，使薄膜產生黃銅礦(Chalcopyrite)結構。根據本實驗室先前實驗結果可比較出，Si含量莫耳分率為0.23之薄膜在熱處理溫度300 ℃時會產生黃銅礦結構之特徵峰(112)，但在400 ℃時較不穩定。而本研究Si含量莫耳分率為0.13之薄膜在熱處理溫度300 ℃時同樣有產生黃銅礦結構，隨著熱處理溫度來到400 ℃時，黃銅礦結構之特徵峰(112)強度變高，半高寬變窄，晶粒隨之變大，促進薄膜燒結後結晶性提高。相較之下，Si含量莫耳分率為0.13且經熱處理溫度400 ℃為最佳Cu(InGa)Se2薄膜。

The experiment used non-vacuum processes to prepare Si doped Cu(InGa)Se2 thin films as the absorber layers for the photovoltaic devices. Experiment process is the first, according to different proportions of copper-selenium, indium-selenium and tellurium-selenium three compound powder then add pure silicon. After the CIGS slurry is prepared by the ball milling method, the slurry is coated on the substrate by spin coating to form a precursor layer film. After being placed on a heating half-plate for soft baking, the precursor layer is placed in an infrared lamp Rapid Thermal Annealing (RTA) to perform a rapid annealing process at 300 °C, 400 °C and 500 °C, respectively, and the temperature is maintained for 10 minutes to make the film produce chalcopyrite structure.
According to the previous experimental results, the film with mole fraction of 0.23 Si has a characteristic peak (112) of chalcopyrite at heat treatment temperature of 300 °C, but it is not stable at 400 °C. On the other hand, in the studies the chalcopyrite structure is also produced at heat treatment temperature of 300 °C with mole fraction of 0.13 Si. As the heat treatment temperature reaches 400 °C, the characteristic peak intensity (112) of the chalcopyrite structure becomes higher. As the width becomes narrower, the crystal grains become larger, and the crystallinity of the thin film is improved.By comparison, the mole fraction of 0.13 Si and the heat treatment temperature at 400 °C is the best Cu (InGa)Se2 thin film.

摘要...i
Abstract...ii
誌謝...iii
目錄...iv
表目錄...ix
圖目錄...x
第一章 簡介...1
1.1前言...1
1.2太陽能電池的分類...2
1.3薄膜型太陽能電池...2
1.3.1染料敏化薄膜太陽能電池...3
1.3.2非晶矽薄膜太陽能電池...4
1.3.3碲化鎘（CdTe）薄膜太陽能電池...5
1.3.4銅銦鎵硒（CIGS）薄膜太陽能電池...6
1.4研究動機...7
第二章 文獻探討...13
2.1太陽能電池工作原理...13
2.2銅銦鎵硒(CIGS)太陽能電池製程技術...15
2.2.1鈉(Soda-lime)玻璃與康寧(Corning)玻璃基板...15
2.2.2鉬（Mo）金屬背電極...16
2.2.3銅銦硒(CuInSe) / 銅銦鎵硒(CuInGaSe)主吸收層(Absorber)...17
2.2.4硫化鎘緩衝層(CdS Buffer Layer)...20
2.2.5 ZnO以及ZnO:Al窗口層...21
2.2.6氟化鎂（MgF2）抗反射層...21
2.2.7鋁(Al)金屬電極...22
2.3銅銦鎵硒吸收層製程技術...22
2.3.1蒸鍍法...22
2.3.2硒化法...24
2.3.3塗佈法...25
2.4球磨粉碎...26
2.4.1球磨粉碎原理...26
2.4.2機械分散法...27
2.4.3化學分散法...28
2.4.4超音波分散法...28
2.5影響球磨粉碎顆粒大小的變因...29
2.5.1結構影響...29
2.5.2球磨機轉速影響...30
2.5.3球磨介質充填率影響...30
2.5.4乾、濕式球磨方式影響...30
2.6快速退火RTP之熱輻射原理...30
第三章 實驗流程與分析...36
3.1實驗方法與步驟...36
3.1.1基板前處理...36
3.1.2漿料配置...37
3.1.3塗佈步驟...37
3.1.4軟烤步驟...37
3.1.5快速退火處理...37
3.2 實驗設備...38
3.2.1次微米粉末製造設備...38
3.2.2旋轉塗佈儀...39
3.2.3快速退火系統...40
3.3實驗分析設備...40
3.3.1 X光繞射儀（X-Ray Diffraction，XRD）...40
3.3.2掃描式電子顯微鏡（Scanning Electron Microscope，SEM）...42
3.3.3能量光譜儀（Energy Dispersive Spectrometer，EDS）...43
3.3.4感應耦合電漿質(Inductively Coupled Plasma-Mass Spectrometry，ICP-MS)...44
3.3.5紫外光-可見光（UV-ViS）光譜儀...45
第四章 結果與討論...54
4.1 Cu(InGa)Se2薄膜成份分析...54
4.2 Cu(InGa)Se2顯微結構分析...56
4.2.1熱處理溫度對銅銦鎵硒薄膜顯微結構之影響...56
4.3 Cu(InGa)Se2結晶特性分析...58
4.3.1粉末對銅銦鎵硒初鍍膜結晶特性之影響...58
4.3.2熱處理對銅銦鎵硒薄膜結晶特性之影響...59
4.3.3銅對熱處理後銅銦鎵硒薄膜結晶特性之影響...61
4.3.4銅對銅銦鎵硒薄膜特徵峰(112)之影響...61
4.3.5矽對銅銦鎵硒薄膜特徵峰(112)之影響...62
4.4光學特性分析...63
第五章 結論...77
參考文獻...79
Extended Abstract...83

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