臺灣博碩士論文加值系統

晶圓洗淨是影響晶圓品質相當重要的一個製程，如對矽晶圓之LPD(Light point de-fect)，MCL( Metal Contamination Level)…等等有重大的影響。清洗製程會視晶圓於各段製程中所要求的機能的不同而使用鹼洗淨、RCA、HF、臭氧水…等等不同的清洗化學品及清洗條件。在於洗淨最後的一個步驟大部分會是使用臭氧水清洗。由於臭氧具有強氧化能力，所以使用臭氧水清洗矽晶圓的主要目的用來是去除附著於晶圓表面的有機物質，微粒子及使金屬離子化降低金屬汙染，並於晶圓表面產生一層氧化膜保護晶圓表面。
臭氧水洗淨流程時，會因臭氧水流量變化使得臭氧水濃度產生變化，造成晶圓洗淨品質較無法控制。另外臭氧水輸送過程容易衰減，所以通常臭氧產生器需要產生較高濃度之臭氧水，到洗淨端才能達到所需要濃度的要求。因枚葉式洗淨機於晶圓洗淨時，臭氧水濃度變化太大，所以清洗條件中，臭氧水濃度範圍設定較寬，例如13±5 mg/L，所以臭氧水濃度於8~18 mg/L之區間都可以。這樣可能造成品質不容易控制及臭氧產生器壽命變短且造成不必要的浪費。
本次研究主要是針對臭氧水濃度不穩之問題探討及改善，以維持晶圓之品質要求。

Wafer cleaning is a very important process for wafer quality, which has a significant impact on the quality of silicon wafers, such as LPD (Light Point defect), MCL (Metal Contamination Level), etc. Different cleaning chemicals and cleaning conditions were used during the cleaning process, such as alkali cleaning, RCA, HF, ozone water, etc., for different wafer process. In most of the cleaning process, ozone water washing is scheduled for the final process. Owing to the oxidizing property of ozone, ozone water washing process on silicon wafers can remove organic substances and the particles from the wafer attached on the surface of the wafers, and to ionize the metal to reduce metal contamination and produce an oxide film on the surface of the wafer to protect the wafer’s surface.
During the ozone water cleaning process, the ozone concentration of ozone water is influenced by the ozone water flow rate. The ozone concentration of ozone water is easily reduced and unstable during the transportation, and this makes the ozone generator supply higher concentration ozone water to reach the requirement of the ozone water cleaning process. This may result in poor quality control for silicon wafer, and the life of ozone generator shortened and more water and power needed.
This paper is mainly to explore and improve the problem of unstable concentration of ozone water during the wafer cleaning process.

中文摘要…………………………………………………………………………i
英文摘要………………………………………………………………………...ii
誌謝……………………………………………………………………………..iii
目錄……………………………………………………………………………..iv
表目錄………………………………………………………………………..Vi
圖目錄……………………………………………………………………….Vii
第一章文獻探討及研究動機…………………………………………………...1
1.1半導體的發展與應用…………………………………………………..1
1.2矽晶圓的發展………………………………………..………………….2
1.3矽晶圓的製造技術………………………………………………………2
1.3.1拉晶……………………………………………………………….....2
1.3.2晶棒研削………………………………………………………….....7
1.3.3晶棒切斷………………………………………………………….....7
1.3.4晶塊切片………………………………………………………….....7
1.3.5晶圓平面研削…………………………………………………….....8
1.3.6晶圓周邊研削…………………………………………………….....8
1.3.7晶圓蝕刻化學研磨……………………………………………….....9
1.3.8晶圓周邊鏡面拋光研磨………………………………………...…..9
1.3.9晶圓表面鏡面拋光研磨…………………………………………...10
1.3.10晶圓洗淨………………………………………………………….10
1.3.11晶圓磊晶成長…………………………………………………….11
1.4研究的動機及背景……………………………………………………..12
1.5改善的方法與目的……………………………………………………..12
第二章臭氧水產生器原理…………………………………………………….14
2.1臭氧產生原理…………………………………………………………..14
2.1.1臭氧的特性………………………………………………………...14
2.1.2臭氧氣體產生方式…………………………………………..…….15
2.1.3影響臭氧氣體濃度的因素…………………………………...……17
2.1.4臭氧水產生器形成臭氧水之方式………………………………...17
2.2臭氧水對矽晶圓洗淨目的……………………………………………..23
2.3臭氧水對晶圓洗淨品質的影響因素…………………………………..26
2.4影響臭氧水濃度的因素………………………………………………..27
2.4.1 O3氣體壓力………………………………………………….27
2.4.2電解cell出力大小…………………………………………….….28
2.4.3純水流量大小……………………………………………….…….28
2.4.4純水的溫度…………………………………………………..29
第三章研究內容與方法……………………………………………………….31
3.1枚葉式洗淨機洗淨流程介紹…………………………………………..31
3.2枚葉式洗淨機臭氧水濃度不穩定的問題研究………………………..31
3.2.1 臭氧水洗淨現狀問題掌握現……………………………………..32
3.2.2臭氧水產生器O3水濃度的控制…………………………………..32
3.2.3枚葉式矽晶圓洗淨機O3水濃度變化大之原因討論……………..33
3.2.4 枚葉式洗淨機O3水的管路設計……………………………….....34
第四章實驗設計……………………………………………………………….36
4.1臭氧水濃度不穩定的問題改善方法……………..………….………...36
4.2枚葉式洗淨機O3水管路改造…………………………….…….….…..36
第五章結果與討論…………………………………………………………….37
5.1 O3水產生器之O3水流量、濃度、發生量曲線變...………………….37
5.2枚葉式洗淨機晶圓洗淨時O3水濃度的變…………………………….40
5.3 O3水產生器離子交換膜壽命延長…………………………………….42
5.4節水……………………………………………………………………..43
5.5節能……………………………………………………………………..43
第六章結論…………………………………………………………………….44
參考文獻……………………………………………………………………….45
附錄一 改善前臭氧產生器出力%/濃度/流量記錄值…………………..……46
附錄二 改善後臭氧產生器出力%/濃度/流量記錄值…………………..……47
附錄三 改善前後每片晶圓洗淨時臭氧水濃度記錄值………………………48
Extended Abstract………………………………………………………………49

[1] Sze, S.M. Semiconductor Devices: Pioneering Papers. (Singapore: World Scientific Publishing Co., 1991);the reprint of F Braun’s peaper(1974) is on page 377.
[2] J.Bardeen and W.H.Brattain, Pyus. Rev., 74(1948) p.357.
[3]G.K Teal and J.B. Little, Phys. Rev., 78(1950) p.647.
[4]J.Z. Czochralski, Phys. Rev., 92(1918) p.219.
[5]H.J. Leamy and J.H Wernick, “Semiconductor Silicon: The Extraordinary Made Ordinary,” MRS Bulletin May (1997) p.47-55.
[6]J.S. Kilby, IEEE Trans. Electron Devices (1976) p.648.
[7]R.N. Noyce, U.S. Patent No. 2,981,877 (April 26, 1961).
[8]矽晶圓半導體材料技術 林明獻編著p1-4.
[9]H.C. Theurer, J. Metals 8, Trans. AIME 206(1956) p.1316; U.S. Patent No.2,060,123(October 23, 1962).
[10]W. Kern and D.A. Puorinen, RCA Rev.31(1970) p.187.
[11]R.C. Sangster, E.F. Maverick, and M.L. Croutch, J. Electrochem. Soc., 104(1957).
[12]武漢大學 吉林大學等校編 曹錫章 宋天佑 王杏橋修訂. 無機化學(第三版). 1994-10 : 573.
[13] GORETM Ozonation Module Operating and Maintenance Manual Revision 3.2 W. L. Gore & Associates, Co., Ltd p.4
[14] GORETM Ozonation Module Operating and Maintenance Manual Revision 3.2 W. L. Gore & Associates, Co., Ltd p.6